Semiconductor memory systems with on-die data buffering

1. A semiconductor memory system, comprising:

a first semiconductor memory die, comprising:

a primary data interface to receive an input data stream during write operations and to deserialize the input data stream into a first plurality of data streams, and

a secondary data interface, coupled to the primary data interface, to transmit the first plurality of data streams; and

a second semiconductor memory die comprising a secondary data interface, coupled to the secondary data interface of the first semiconductor memory die, to receive the first plurality of data streams.

2. The semiconductor memory system of claim 1 , wherein:

the primary data interface of the first semiconductor die is to receive the input data stream at double data rate (DDR) during the write operations; and

the first plurality of data streams comprises a first single data rate (SDR) data stream and a second SDR data stream.

3. The semiconductor memory system of claim 1 , wherein:

the first and second semiconductor memory die each comprise a command and address (C/A) interface to be coupled to a C/A bus;

the first semiconductor memory die is to receive a first chip-select signal from the C/A bus; and

the second semiconductor memory die is to receive a second chip-select signal from the C/A bus, the second chip-select signal being distinct from the first chip-select signal.

4. The semiconductor memory system of claim 1 , wherein the second semiconductor memory die further comprises a primary data interface configurable to be disabled during operation of the semiconductor memory system.

5. The semiconductor memory system of claim 1 , wherein:

the secondary data interface of the second semiconductor memory die is to transmit a second plurality of data streams during read operations directed at the second semiconductor memory die;

the secondary data interface of the first semiconductor memory die is to receive the second plurality of data streams from the second semiconductor memory die; and

the primary data interface of the first semiconductor memory die is to serialize the second plurality of data streams into an output data stream and transmit the output data stream.

6. The semiconductor memory system of claim 5 , wherein the second plurality of data streams comprises two SDR data streams and the output data stream is a DDR data stream.

7. The semiconductor memory system of claim 1 , further comprising a module substrate on which the first and second semiconductor die are mounted, wherein:

the module substrate comprises a data bus that includes a signal line to convey the input data stream; and

the primary data interface of the first semiconductor memory die is coupled to the signal line.

8. The semiconductor memory system of claim 7 , further comprising a semiconductor package mounted on the module substrate and including a package substrate, wherein the first and second semiconductor memory die are stacked on the package substrate.

9. The semiconductor memory system of claim 8 , wherein:

the primary data interface of the first semiconductor memory die comprises a first bond pad;

the secondary data interfaces of the first and second semiconductor memory die each comprise two bond pads; and

the package substrate comprises a primary data bond pad and two secondary data bond pads, wherein:

the primary data bond pad is coupled to the signal line of the data bus and bonded to the first bond pad; and

each of the secondary data bond pads is bonded to a respective bond pad of the secondary interface of the first semiconductor memory die and a respective bond pad of the secondary interface of the second semiconductor memory die.

10. The semiconductor memory system of claim 8 , further comprising a plurality of through-die vias to couple the secondary data interfaces of the first and second semiconductor memory die.

11. The semiconductor memory system of claim 7 , further comprising first and second semiconductor packages mounted on the module substrate, wherein the first semiconductor memory die is situated in the first semiconductor package and the second semiconductor memory die is situated in the second semiconductor package.

12. The semiconductor memory system of claim 11 , wherein the first and second semiconductor packages are situated opposite to each other on opposing sides of the module substrate.

13. The semiconductor memory system of claim 11 , wherein the first and second semiconductor packages are situated in adjacent sites on the module substrate.

14. The semiconductor memory system of claim 7 , further comprising:

a first semiconductor package mounted on the module substrate; and

a second semiconductor package stacked on the first semiconductor package in a package-on-package configuration;

wherein the first semiconductor memory die is situated in the first semiconductor package and the second semiconductor memory die is situated in the second semiconductor package.

15. The semiconductor memory system of claim 7 , comprising a plurality of secondary semiconductor memory die including the second semiconductor memory die and distinct from the first semiconductor memory die, wherein each die of the plurality of secondary semiconductor memory die comprises a secondary data interface, coupled to the secondary data interface of the first semiconductor memory die, to receive the plurality of data streams.

16. The semiconductor memory system of claim 15 , wherein:

the plurality of secondary semiconductor memory die comprises a third semiconductor memory die and a fourth semiconductor memory die;

the first and second semiconductor memory die are stacked on a first package substrate; and

the third and fourth semiconductor memory die are stacked on a second package substrate.

17. The semiconductor memory system of claim 16 , wherein the first and second package substrates on stacked on the module substrate in a package-on-package configuration.

18. The semiconductor memory system of claim 16 , wherein the first and second package substrates are situated opposite to each other on opposing sides of the module substrate.

19. The semiconductor memory system of claim 16 , wherein the first and second package substrates are situated in adjacent sites on the module substrate.

20. The semiconductor memory system of claim 15 , wherein the plurality of secondary semiconductor memory die comprises a non-functional die.

21. The semiconductor memory system of claim 1 , wherein the first semiconductor memory die further comprises:

a clock input to receive an input clock signal;

a delay-locked loop to generate a first delayed clock signal based on the input clock signal; and

a first clock domain crossing circuit, coupled between the primary data interface and the secondary data interface, to transition the first plurality of data streams from a clock domain associated with the input clock signal to a clock domain associated with the first delayed clock signal.

22. The semiconductor memory system of claim 21 , wherein the secondary data interface of the first semiconductor memory die comprises a plurality of flip-flops to transmit the first plurality of data streams in accordance with the first delayed clock signal.

23. The semiconductor memory system of claim 22 , wherein:

the first semiconductor memory die further comprises a strobe interface to receive a data strobe; and

the primary data interface of the first semiconductor memory die comprises a plurality of flip-flops to receive and deserialize the input data stream in accordance with the data strobe.

24. The semiconductor memory system of claim 21 , wherein:

the secondary data interface of the first semiconductor memory die is to receive a second plurality of data streams from the secondary data interface of the second semiconductor memory die during read operations directed at the second semiconductor memory die; and

the first semiconductor memory die further comprises a second clock domain crossing circuit, coupled between the primary data interface and the secondary data interface, to transition the second plurality of data streams from the clock domain associated with the input clock signal to the clock domain associated with the first delayed clock signal.

25. The semiconductor memory system of claim 24 , wherein:

the secondary data interface of the first semiconductor memory die comprises a plurality of flip-flops to sample the second plurality of data streams in accordance with the input clock signal; and

the primary data interface of the first semiconductor memory die comprises a serializer to serialize the second plurality of data streams into an output data stream in accordance with the first delayed clock signal.

26. The semiconductor memory system of claim 24 , wherein:

the second semiconductor memory die further comprises a clock input to receive the input clock signal and a delay-locked loop to generate a second delayed clock signal based on the input clock signal; and

the secondary data interface of the second semiconductor memory die comprises a plurality of flip-flops to transmit the second plurality of data streams in accordance with the second delayed clock signal.

27. The semiconductor memory system of claim 1 , wherein:

the first semiconductor memory die further comprises a clock input to receive an input clock signal; and

the secondary data interface of the first semiconductor memory die comprises a plurality of flip-flops to transmit the first plurality of data streams in accordance with the input clock signal.

28. The semiconductor memory system of claim 27 , wherein:

the second semiconductor memory die further comprises a clock input to receive the input clock signal and a delay circuit to delay the input clock signal; and

the secondary data interface of the second semiconductor memory die comprises a plurality of flip-flops to sample the first plurality of data streams in accordance with the delayed input clock signal.

29. The semiconductor memory system of claim 28 , wherein the delay circuit comprises a digitally controlled delay line.

30. The semiconductor memory system of claim 28 , wherein the delay circuit comprises a controlled delay element.

31. The semiconductor memory system of claim 27 , wherein:

the second semiconductor memory die further comprises a clock input to receive the input clock signal; and

the secondary data interface of the second semiconductor memory die comprises a plurality of delay circuits to delay the first plurality of data streams and a plurality of flip-flops to sample the delayed first plurality of data streams in accordance with the input clock signal.

32. The semiconductor memory system of claim 1 , wherein:

the secondary data interface of the first semiconductor memory die is to receive a second plurality of data streams from the secondary data interface of the second semiconductor memory die during read operations directed at the second semiconductor memory die and to provide the second plurality of data streams to the primary data interface of the first semiconductor memory die; and

the first semiconductor memory die further comprises a plurality of delay lines, coupled between the secondary and primary data interfaces, to delay the second plurality of data streams.

33. The semiconductor memory system of claim 32 , wherein:

the first semiconductor memory die further comprises a clock input to receive an input clock signal and a delay-locked loop to generate a first delayed clock signal based on the input clock signal; and

the primary data interface of the first semiconductor memory die comprises a serializer to serialize the second plurality of data streams in accordance with the first delayed clock signal.

34. The semiconductor memory system of claim 33 , wherein the first semiconductor memory die further comprises a strobe interface to generate a strobe in accordance with the first delayed clock signal.

35. The semiconductor memory system of claim 34 , wherein the strobe interface comprises a multiplexer to generate the strobe.

36. The semiconductor memory system of claim 1 , wherein the first semiconductor memory die further comprises:

a first strobe interface to receive a strobe associated with the input data stream; and

a second strobe interface to provide the strobe to the second semiconductor memory die.

37. A method, comprising:

at a first semiconductor memory die:

receiving an input data stream at a primary data interface during write operations;

deserializing the input data stream into a first plurality of data streams; and

transmitting the first plurality of data streams from a secondary data interface to one or more additional semiconductor memory die.

38. The method of claim 37 , wherein:

the receiving comprises receiving the input data stream at double data rate (DDR); and

the transmitting comprises transmitting each data stream of the first plurality of data streams at single data rate (SDR).

39. The method of claim 37 , wherein:

the receiving comprises receiving the input data stream through a first bond pad; and

the transmitting comprises driving a first data stream of the first plurality of data streams onto a second bond pad and driving a second data stream of the first plurality of data streams onto a third bond pad.

40. The method of claim 37 , further comprising, at the first semiconductor memory die:

during read operations directed at a respective semiconductor memory die of the one or more additional semiconductor memory die, receiving at the secondary data interface a second plurality of data streams from the respective semiconductor memory die;

serializing the second plurality of data streams into an output data stream; and

transmitting the output data stream from the primary data interface.

41. A semiconductor memory die, comprising:

a primary data interface to receive an input data stream during write operations and to deserialize the input data stream into a first plurality of data streams; and

a secondary data interface, coupled to the primary data interface, to transmit the first plurality of data streams.

42. The semiconductor memory die of claim 41 , wherein:

the primary data interface is to receive the input data stream at double data rate (DDR) during the write operations; and

the first plurality of data streams comprises a first single data rate (SDR) data stream and a second SDR data stream.

43. The semiconductor memory die of claim 41 , wherein:

the secondary data interface is to receive a second plurality of data streams from a separate semiconductor memory die during read operations directed at the separate semiconductor memory die; and

the primary data interface of the first semiconductor memory die is to serialize the second plurality of data streams into an output data stream and transmit the output data stream.

44. The semiconductor memory die of claim 43 , wherein the second plurality of data streams comprises two SDR data streams and the output data stream is a DDR data stream.

45. The semiconductor memory die of claim 41 , wherein:

the primary data interface comprises a first bond pad to receive the input data stream; and

the secondary data interface comprises a second bond pad through which to transmit a first data stream of the first plurality of data streams and a third bond pad through which to transmit a second data stream of the first plurality of data streams.

46. The semiconductor memory die of claim 41 , further comprising a plurality of through-die vias, coupled to the secondary data interface, to convey the first plurality of data streams.

47. The semiconductor memory die of claim 41 , wherein:

the semiconductor memory die is configurable to operate as a master die in a first mode and as a slave die in a second mode;

the primary data interface is configurable to receive and deserialize the input data stream in the first mode and to be deactivated in the second mode; and

the secondary data interface is configurable to transmit the first plurality of data streams during write operations in the first mode and to receive a second plurality of data streams during write operations in the second mode.

48. A semiconductor memory system, comprising:

a first semiconductor package comprising a first semiconductor memory die, the first semiconductor memory die comprising:

a primary data interface to receive data during write operations, and

a secondary data interface, coupled to the primary data interface, to retransmit the data; and

a second semiconductor package stacked with the first semiconductor package in a package-on-package configuration and comprising a second semiconductor memory die, the second semiconductor memory die comprising a secondary data interface, coupled to the secondary data interface of the first semiconductor memory die, to receive the retransmitted data.

49. The semiconductor memory system of claim 48 , wherein:

the primary data interface of the first semiconductor memory die is to receive the data in an input data stream and deserialize the input data stream into a plurality of data streams; and

the secondary data interface of the first semiconductor memory die is to retransmit the data by transmitting the plurality of data streams.

50. The semiconductor memory system of claim 49 , wherein:

the input data stream is a double data rate (DDR) data stream; and

each of the plurality of data streams is a single data rate (SDR) data stream.

51. The semiconductor memory system of claim 48 , wherein:

the first and second semiconductor packages each comprise a package substrate; and

each package substrate comprises a first conductive pad on a top surface of the package substrate and a second conductive pad on a bottom surface of the substrate, wherein the first and second conductive pads of both package substrates are coupled to each other and to the secondary data interfaces of both the first and second semiconductor memory die.

52. The semiconductor memory system of claim 51 , wherein:

the second semiconductor memory die further comprises a primary data interface;

each package substrate comprises a third conductive pad on the bottom surface of the package substrate;

the third conductive pad of the first semiconductor package is coupled to the primary data interface of the first semiconductor memory die; and

the third conductive pad of the second semiconductor package is coupled to the primary data interface of the second semiconductor memory die and is not coupled to the third conductive pad of the first semiconductor package.

53. The semiconductor memory system of claim 48 , wherein:

the first semiconductor package further comprises a third semiconductor memory device;

the second semiconductor package further comprises a fourth semiconductor memory device; and

the third and fourth semiconductor memory devices each comprise a secondary data interface, coupled to the secondary data interface of the first semiconductor memory die, to receive the retransmitted data.

54. A method, comprising:

in a first semiconductor die situated in a first semiconductor package:

receiving data at a primary data interface die during write operations; and

retransmitting the data from a secondary data interface to one or more additional semiconductor memory die, wherein the one or more additional semiconductor memory die comprise at least one additional semiconductor memory die in a second semiconductor package stacked with the first semiconductor package in a package-on-package configuration.

55. The method of claim 54 , wherein:

receiving the data comprises receiving an input data stream;

the method further comprises deserializing the input data stream into a plurality of data streams in the first semiconductor die; and

retransmitting the data comprises transmitting the plurality of data streams.

56. The method of claim 55 , wherein:

the input data stream is a double data rate (DDR) data stream; and

each of the plurality of data streams is a single data rate (SDR) data stream.

57. The method of claim 54 , wherein retransmitting the data comprises transmitting at least a portion of the data through a contact connecting the first and second semiconductor packages.

58. A semiconductor package, comprising:

a semiconductor memory die, comprising:

a primary data interface to receive data during write operations, and

a secondary data interface, coupled to the primary data interface, to retransmit the data;

a package substrate on which the semiconductor memory die is mounted;

a first conductive pad situated on a bottom side of the package substrate and coupled to the primary data interface, to provide the data to the primary data interface; and

a second conductive pad situated on a top side of the package substrate and coupled to the secondary data interface, to convey at least a portion of the retransmitted data.

59. The semiconductor package of claim 58 , wherein:

the primary data interface is to receive the data in an input data stream and deserialize the input data stream into a plurality of data streams;

the secondary data interface of the first semiconductor memory die is to retransmit the data by transmitting the plurality of data streams; and

the second conductive pad is to convey a first data stream of the plurality of data streams.

60. The semiconductor package of claim 59 , further comprising a third conductive pad coupled to the secondary data interface and situated on the top side of the package substrate, to convey a second data stream of the plurality of data streams.

61. The semiconductor package of claim 60 , further comprising:

a fourth conductive pad situated on the bottom side of the substrate package and coupled to the secondary data interface and the second conductive pad; and

a fifth conductive pad situated on the bottom side of the substrate package and coupled to the secondary data interface and the third conductive pad.

62. The semiconductor package of claim 59 , wherein:

the input data stream is a double data rate (DDR) data stream; and

each of the plurality of data streams is a single data rate (SDR) data stream.