Solid state drive encountering power failure and associated data storage method
View Patent ↗A solid state drive and its associated data storage method are provided. The data storage method comprising steps of: receiving data-for-writing from a host, and transforming the data-for-writing to data-for-storage; comparing a supply voltage and a predetermined voltage; and when the supply voltage is lower than the predetermined voltage, proceeding a strong-page programming procedure for storing the data-for-storage to a blank area of a multi-level cell flash memory.
1. A solid state drive, electrically connected to a host, comprising:
a control unit, for receiving data-for-writing from the host, and transforming the data-for-writing to data-for-storage;
a buffer unit, for storing the data-for-storage;
a multi-level cell flash memory, electrically connected to the control unit; and
a voltage detecting unit, for receiving a supply voltage, and issuing an informing signal when the supply voltage is lower than a predetermined voltage, wherein
the control unit proceeds a strong-page programming procedure for storing the data-for-storage to a blank area of the multi-level cell flash memory after receiving the informing signal.
2. The solid state drive as claimed in claim 1 , wherein the control unit sequentially proceeds the strong-page programming procedure and a weak-page programming procedure for storing the data-for-storage to the multi-level cell flash memory when the informing signal is not received by the control unit.
3. The solid state drive as claimed in claim 1 , wherein the multi-level cell flash memory is a double-level cell flash memory, a triple-level cell flash memory, or a quadruple-level cell flash memory.
4. The solid state drive as claimed in claim 1 , wherein each memory cell of the blank area consists of two storage states after the strong-page programming procedure.
5. A data storage method for a solid state drive, the data storage method comprising steps of:
receiving data-for-writing from a host, and transforming the data-for-writing to data-for-storage;
comparing a supply voltage and a predetermined voltage; and
when the supply voltage is lower than the predetermined voltage, proceeding a strong-page programming procedure for storing the data-for-storage to a blank area of a multi-level cell flash memory.
6. The data storage method as claimed in claim 5 , wherein the data storage method further comprising step of:
when the supply voltage is not lower than the predetermined voltage, sequentially proceeding the strong-page programming procedure and a weak-page programming procedure for storing the data-for-storage to the multi-level cell flash memory.
7. The data storage method as claimed in claim 5 , wherein the multi-level cell flash memory is a double-level cell flash memory, a triple-level cell flash memory, or a quadruple-level cell flash memory.
8. The data storage method as claimed in claim 5 , wherein each memory cell of the blank area consists of two storage states after the strong-page programming procedure.