Semiconductor memory device having a variable resistance layer serving as a memory layer
A plurality of first conductive layers are stacked at a predetermined pitch in a first direction perpendicular to a substrate. A memory layer is provided in common on side surfaces of the first conductive layers and functions as the memory cells. A second conductive layer comprises a first side surface in contact with side surfaces of the first conductive layers via the memory layer, the second conductive layer extending in the first direction. A width in a second direction of the first side surface at a first position is smaller than a width in the second direction of the first side surface at a second position lower than the first position. A thickness in the first direction of the first conductive layer at the first position is larger than a thickness in the first direction of the first conductive layer at the second position.
1. A semiconductor memory device comprising a memory cell array, the memory cell array comprising memory cells,
the memory cell array comprising:
first conductive layers stacked at a predetermined pitch in a first direction perpendicular to a substrate, the first conductive layers extending in a second direction parallel to the substrate;
a memory layer provided in common on side surfaces of the first conductive layers; and
a second conductive layer comprising a first side surface in contact with side surfaces of the first conductive layers via the memory layer, the second conductive layer extending in the first direction,
an entire width in the second direction of the first side surface at a first position being smaller than an entire width in the second direction of the first side surface at a second position lower than the first position, and
an entire thickness in the first direction of a conductive layer of the first conductive layers at the first position being larger than an entire thickness in the first direction of another conductive layer of the first conductive layers at the second position.
2. The semiconductor memory device according to claim 1 , wherein
a direction perpendicular to the first and second directions is determined as a third direction,
a thickness in the third direction of the memory layer at the first position is larger than a thickness in the third direction of the memory layer at the second position.
3. The semiconductor memory device according to claim 1 , wherein
the memory cell array further comprises:
a selection transistor having a first end connected to one end of the second conductive layer;
a select gate line connected to a gate of the selection transistor; and
a wiring line connected to a second end of the selection transistor.
4. The semiconductor memory device according to claim 1 ,
the memory cell array further comprising:
a third conductive layer extending in a third direction perpendicular to the first and second directions;
a semiconductor layer in contact with an upper surface of the third conductive layer and a lower surface of the second conductive layer, the semiconductor layer extending in the first direction;
a gate insulating layer provided on a side surface of the semiconductor layer; and
a fourth conductive layer provided on a side surface of the semiconductor layer via the gate insulating layer, the fourth conductive layer extending in the second direction.
5. The semiconductor memory device according to claim 1 , wherein
the memory layer is a variable resistance layer and is provided as a plane in the first and second directions.
6. The semiconductor memory device according to claim 1 , wherein
the first conductive layers are formed in a comb-teeth shape when viewed in the first direction.