Power semiconductor module and method of manufacturing the same
View Patent ↗A power semiconductor module has a first frame portion, a power semiconductor element, a second frame portion, a control integrated circuit, a wire, and an insulator portion. The power semiconductor element is mounted on a first surface of the first frame portion. The control integrated circuit is mounted on a third surface of the second frame portion for controlling the power semiconductor element. A wire has one end connected to the power semiconductor element and the other end connected to the control integrated circuit. The first surface of the first frame portion and the third surface of the second frame portion are located at the same height in a direction vertical to the first surface of the first frame portion.
1. A power semiconductor module comprising:
a first frame portion having a first surface and a second surface opposed to each other;
a power semiconductor element mounted on said first surface of said first frame portion;
a second frame portion having a third surface and a fourth surface opposed to each other;
a control integrated circuit directly mounted on said third surface of said second frame portion for controlling said power semiconductor element;
a wire having one end and the other end, said one end connected to said power semiconductor element and said the other end connected to said control integrated circuit; and
an insulator portion sealing said power semiconductor element, said first frame portion, said control integrated circuit, said second frame portion, and said wire,
said first surface of said first frame portion and said third surface of said second frame portion being located at a same height in a direction vertical to said first surface of said first frame portion.
2. The power semiconductor module according to claim 1 , further comprising an insulating sheet in contact with said second surface of said first frame portion and said fourth surface of said second frame portion.
3. The power semiconductor module according to claim 1 , further comprising a block portion in contact with said second surface of said first frame portion.
4. The power semiconductor module according to claim 3 , wherein a material of said block portion includes copper.
5. The power semiconductor module according to claim 3 , wherein a material of said block portion includes ceramic.
6. The power semiconductor module according to claim 1 , wherein at least one of said first frame portion and said second frame portion emerges to an outside of said insulator portion from a surface of said insulator portion that is located on a side facing said first surface.
7. The power semiconductor module according to claim 6 , wherein at least one of said first frame portion and said second frame portion has a connector pin at a position exposed from said insulator portion to said outside.
8. The power semiconductor module according to claim 1 , wherein a material of said wire includes aluminum.
9. A power semiconductor module, comprising:
a first frame portion having a first surface and a second surface opposed to each other;
a power semiconductor element mounted on said first surface of said first frame portion;
a second frame portion having a third surface and a fourth surface opposed to each other;
a control integrated circuit directly mounted on said third surface of said second frame portion for controlling said power semiconductor element;
a wire having one and the other end, said one end connected to said power semiconductor element and said the other end connected to said control integrated circuit; and
an insulator portion sealing said power semiconductor element, said first frame portion, said control integrated circuit, said second frame portion, and said wire,
said second frame portion being bent inside said insulator portion in a direction crossing said first surface.