Method for producing photoelectric conversion element
View Patent ↗There is provided a method of producing a photovoltaic element comprising: a first step in which an i-type amorphous silicon layer ( 16 ) and an n-type amorphous silicon layer ( 14 ) are formed over a light-receiving surface of an n-type monocrystalline silicon substrate ( 18 ); a second step in which an i-type amorphous silicon layer ( 22 a ) and an n-type amorphous silicon layer ( 23 a ) are formed over a back surface of the n-type monocrystalline silicon substrate ( 18 ); and a third step in which, after the first step and the second step are completed, protection layers are formed over the n-type amorphous silicon layer ( 14 ) and the n-type amorphous silicon layer ( 23 a ).
1. A method of producing a photovoltaic element, comprising:
a first step in which a first amorphous semiconductor-based layer is formed over a light-receiving surface of a crystalline semiconductor-based substrate;
a second step in which a second amorphous semiconductor-based layer is formed over a back surface of the crystalline semiconductor-based substrate; and
a third step in which, after the first step and the second step are completed, a first protection layer is formed over the first amorphous semiconductor-based layer after a second protection layer is formed over the second amorphous semiconductor-based layer,
wherein the first protection layer is directly in contact with the first amorphous semiconductor-based layer;
wherein the second amorphous semiconductor-based layer includes an n-type semiconductor layer provided in a first region and a p-type semiconductor layer provided in a second region different from the first region, and
the photovoltaic element includes a first electrode provided on the n-type semiconductor layer and a second electrode provided on the p-type semiconductor layer.
2. The method of producing the photovoltaic element according to claim 1 , wherein
the crystalline semiconductor-based substrate is of an n-type,
the first amorphous semiconductor-based layer comprises:
a first i-type amorphous semiconductor-based layer formed over the light-receiving surface of the crystalline semiconductor-based substrate; and
a first n-type amorphous semiconductor-based layer formed over the first i-type amorphous semiconductor-based layer, and
the second amorphous semiconductor-based layer comprises:
a second i-type amorphous semiconductor-based layer formed over the back surface of the crystalline semiconductor-based substrate; and
a second n-type amorphous semiconductor-based layer formed over the second i-type amorphous semiconductor-based layer.
3. The method of producing the photovoltaic element according to claim 1 , wherein
either one or both of the first protection layer and the second protection layer comprises at least one of the group of aluminum oxide, aluminum nitride, silicon nitride, and silicon oxide.
4. The method of producing the photovoltaic element according to claim 2 , wherein
either one or both of the first protection layer and the second protection layer comprises at least one of the group of aluminum oxide, aluminum nitride, silicon nitride, and silicon oxide.