IP Library Granted Patent US 9,391,588
Granted Patent B2
US 9,391,588 · App. 14/031,383 · Granted Jul 12, 2016

MEMS vibrating structure using an orientation dependent single-crystal piezoelectric thin film layer

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Quick Facts
Patent No.
US 9,391,588
App. No.
14/031,383
Granted
Jul 12, 2016
Kind
B2
Abstract

A micro-electrical-mechanical system (MEMS) vibrating structure includes a carrier substrate, a first anchor, a second anchor, a single crystal piezoelectric body, and a conducting layer. The first anchor and the second anchor are provided on the surface of the carrier substrate. The single-crystal piezoelectric body is suspended between the first anchor and the second anchor, and includes a uniform crystalline orientation defined by a set of Euler angles. The single-crystal piezoelectric body includes a first surface parallel to and facing the surface of the carrier substrate on which the first anchor and the second anchor are formed and a second surface opposite the first surface. The conducting layer is inter-digitally dispersed, and is formed on the second surface of the single-crystal piezoelectric body. The first surface of the single-crystal piezoelectric body is left exposed.

Claims (47)

1. A micro-electrical-mechanical system (MEMS) vibrating structure adapted to predominantly vibrate in a longitudinal mode of vibration and comprising:

a carrier substrate;

a first anchor on a first surface of the carrier substrate;

a second anchor on the first surface of the carrier substrate;

a single-crystal piezoelectric body suspended between the first anchor and the second anchor and including a first surface parallel to and facing the carrier substrate and a second surface opposite the first surface, the single-crystal piezoelectric body including a uniform crystalline orientation defined by a first Euler angle (φ), a second Euler angle (θ), and a third Euler angle (ψ); and

only one conductive layer on the second surface of the single-crystal piezoelectric body, the conductive layer comprising a first conductive section over the first anchor and a portion of the single-crystal piezoelectric body and a second conductive section over the second anchor and a portion of the single-crystal piezoelectric body.

2. The MEMS vibrating structure of claim 1 wherein the single-crystal piezoelectric body comprises lithium niobate.

3. The MEMS vibrating structure of claim 2 wherein the Euler angles satisfy the following equation:

|[ sin(φ+ n* 120°)cos ψ+cos(φ+ n* 120°)cos θ sin ψ] cos(38°)+sin θ sin ψ sin(38°)|≧cos ∝

where n=−1, 0, 1, and α=27°.

4. The MEMS vibrating structure of claim 3 wherein the first Euler angle (φ) is between about −10° and 10°, the second Euler angle (θ) is between about 30° and 60°, and the third Euler angle (ψ) is between about 80° and 100°.

5. The MEMS vibrating structure of claim 3 wherein the first Euler angle (φ) is between about 170° and 190°, the second Euler angle (θ) is between about 120° and 150°, and the third Euler angle (ψ) is between about 80° and 100°.

6. The MEMS vibrating structure of claim 3 wherein the first Euler angle (φ) is between about −10° and 10°, the second Euler angle (θ) is between about 30° and 60°, and the third Euler angle (ψ) is between about 260° and 280°.

7. The MEMS vibrating structure of claim 3 wherein the first Euler angle (φ) is between about 170° and 190°, the second Euler angle (θ) is between about 120° and 150°, and the third Euler angle (ψ) is between about 260° and 280°.

8. The MEMS vibrating structure of claim 3 wherein the first Euler angle (φ) is between about 110° and 130°, the second Euler angle (θ) is between about 30° and 60°, and the third Euler angle (ψ) is between about 80° and 100°.

9. The MEMS vibrating structure of claim 3 wherein the first Euler angle (φ) is between about 290° and 310°, the second Euler angle (θ) is between about 120° and 150°, and the third Euler angle (ψ) is between about 80° and 100°.

10. The MEMS vibrating structure of claim 3 wherein the first Euler angle (φ) is between about 110° and 130°, the second Euler angle (θ) is between about 30° and 60°, and the third Euler angle (ψ) is between about 260° and 280°.

11. The MEMS vibrating structure of claim 3 wherein the first Euler angle (φ) is between about 290° and 310°, the second Euler angle (θ) is between about 120° and 150°, and the third Euler angle (ψ) is between about 260° and 280°.

12. The MEMS vibrating structure of claim 3 wherein the first Euler angle (φ) is between about 230° and 250°, the second Euler angle (θ) is between about 30° and 60°, and the third Euler angle (ψ) is between about 80° and 100°.

13. The MEMS vibrating structure of claim 3 wherein the first Euler angle (φ) is between about 50° and 70°, the second Euler angle (θ) is between about 120° and 150°, and the third Euler angle (ψ) is between about 80° and 100°.

14. The MEMS vibrating structure of claim 3 wherein the first Euler angle (φ) is between about 230° and 250°, the second Euler angle (θ) is between about 30° and 60°, and the third Euler angle (ψ) is between about 260° and 280°.

15. The MEMS vibrating structure of claim 3 wherein the first Euler angle (φ) is between about 50° and 70°, the second Euler angle (θ) is between about 120° and 150°, and the third Euler angle (ψ) is between about 260° and 280°.

16. The MEMS vibrating structure of claim 1 wherein the first conductive section and the second conductive section of the conductive layer are inter-digitally dispersed on the second surface of the piezoelectric body.

17. The MEMS vibrating structure of claim 1 wherein the first conductive section of the conductive layer is adapted to receive a first alternating current (AC) voltage, and the second conductive section of the conductive layer is adapted to receive a second AC voltage that is 180 degrees out of phase with the first AC voltage.

18. The MEMS vibrating structure of claim 1 wherein the MEMS vibrating structure is adapted for use as a radio frequency filter.

19. The MEMS vibrating structure of claim 1 wherein the single-crystal piezoelectric body comprises lithium tantalate.

20. A micro-electrical-mechanical system (MEMS) vibrating structure adapted to predominantly vibrate in a shear-horizontal mode of vibration and comprising:

a carrier substrate;

a first anchor on a first surface of the carrier substrate;

a second anchor on the first surface of the carrier substrate;

a single-crystal piezoelectric body suspended between the first anchor and the second anchor and including a first surface parallel to and facing the carrier substrate and a second surface opposite the first surface, the single-crystal piezoelectric body including a uniform crystalline orientation defined by a first Euler angle (φ), a second Euler angle (θ), and a third Euler angle (ψ); and

only one conductive layer on the second surface of the single-crystal piezoelectric body, the conductive layer comprising a first conductive section over the first anchor and a portion of the single-crystal piezoelectric body and a second conductive section over the second anchor and a portion of the single-crystal piezoelectric body.

21. The MEMS vibrating structure of claim 20 wherein the single-crystal piezoelectric body comprises lithium niobate.

22. The MEMS vibrating structure of claim 21 wherein each one of the Euler angles satisfy the following equations:

|sin θ sin ψ|≦cos 45°

|sin(φ+ n* 120°)sin ψ+√{square root over (3)} sin θ cos ψ−cos(φ+ n* 120°)cos θ cos ψ|≧1

where n=−1, 0, 1.

23. The MEMS vibrating structure of claim 22 wherein the first Euler angle (φ) is between about −10° and 10°, and the second Euler angle (θ) is between about 100° and 141°.

24. The MEMS vibrating structure of claim 22 wherein the first Euler angle (φ) is between about 170° and 190°, and the second Euler angle (θ) is between about 40° and 81°.

25. The MEMS vibrating structure of claim 22 wherein the first Euler angle (φ) is between about 110° and 130°, and the second Euler angle (θ) is between about 100° and 141°.

26. The MEMS vibrating structure of claim 22 wherein the first Euler angle (φ) is between about 290° and 310°, and the second Euler angle (θ) is between about 40° and 81°.

27. The MEMS vibrating structure of claim 22 wherein the first Euler angle (φ) is between about 230° and 250°, and the second Euler angle (θ) is between about 100° and 141°.

28. The MEMS vibrating structure of claim 22 wherein the first Euler angle (φ) is between about 50° and 70°, and the second Euler angle (θ) is between about 40° and 81°.

29. The MEMS vibrating structure of claim 20 wherein the first conductive section and the second conductive section of the conductive layer are inter-digitally dispersed on the second surface of the single-crystal piezoelectric body.

30. The MEMS vibrating structure of claim 20 wherein the first conductive section of the conductive layer is adapted to receive a first alternating current (AC) voltage, and the second conductive section of the conductive layer is adapted to receive a second AC voltage that is 180 degrees out of phase with the first AC voltage.

31. The MEMS vibrating structure of claim 20 wherein the MEMS vibrating structure is adapted for use as a radio frequency filter.

32. The MEMS vibrating structure of claim 20 wherein the single-crystal piezoelectric body comprises lithium tantalate.

Assignments (2)
MERGER Recorded Jun 16, 2016
From: RF MICRO DEVICES, INC.
To: QORVO US, INC.
Reel/Frame 039196/0941 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 19, 2013
From: BHATTACHARJEE, KUSHAL; ZHGOON, SERGEI
To: RF MICRO DEVICES, INC.
Reel/Frame 031240/0777 →