THIN FILM TRANSISTOR
A thin film transistor includes a gate electrode formed on a substrate; a gate insulation film covering the gate electrode; an oxide semiconductor layer formed on the gate insulation film; an etching stopper film formed on a channel forming portion of the oxide semiconductor layer, and a source electrode and a drain electrode covering an edge portion of the etching stopper film. The etching stopper film is made of an insulating material, and the insulating material is capable of attenuating a light having wavelength not greater than 450 nm.
1 . A thin film transistor comprising:
a gate electrode formed on a substrate;
a gate insulation film covering the gate electrode;
an oxide semiconductor layer formed on the gate insulation film;
an etching stopper film formed on a channel forming portion of the oxide semiconductor layer, and a source electrode and a drain electrode covering an edge portion of the etching stopper film,
wherein
the etching stopper film is made of an insulating material, and
the insulating material is capable of attenuating a light having wavelength not greater than 450 nm.
2 . The thin film transistor of claim 1 , further comprises
a passivation film covering the source electrode and the drain electrode, wherein
the passivation film is made of insulating material capable of attenuating a light having wavelength not greater than 450 nm.
3 . The thin film transistor of claim 1 , wherein
the oxide semiconductor layer is made of oxide semiconductor including Indium, Zinc, and Gallium.