Method of forming a conductive polymer microstructure
The present disclosure relates to microstructure devices, in which a conductive pattern is formed on the basis of a conductive polymer material. In order to avoid the deposition and processing of the sacrificial materials and reduce a negative influence of the lithography process on sensitive conductive polymer materials a one-layer patterning sequence is proposed, in which a trench pattern is formed in a dielectric material that is subsequently filled with the conductive polymer material.
1. A method, comprising:
forming a trench pattern in a dielectric material, said dielectric material being located above a substrate;
depositing a conductive polymer material above said substrate and in said trench pattern;
heat treating said conductive polymer material after depositing the conductive polymer material above said substrate;
forming a conductive polymer microstructure that is laterally isolated by said dielectric material; and
creating a pattern that includes a hydrophobic layer that corresponds to the dielectric material and hydrophilic channels inside the trench pattern by
performing an oxygen plasma treatment to activate hydrophilic behavior on the trench pattern; and
selectively depositing the hydrophobic layer on a surface of the dielectric material.
2. The method of claim 1 , wherein forming said trench pattern comprises depositing a precursor of said dielectric material as a radiation sensitive material and forming said trench pattern by applying a radiation based lithography process.
3. The method of claim 2 , wherein applying said radiation based lithography process comprises exposing portions of said dielectric material to radiation and removing one of said exposed or unexposed portions.
4. The method of claim 1 , further comprising heating said dielectric material and said substrate after forming said trench pattern and prior to depositing said conductive polymer material.
5. The method of claim 1 , further comprising removing an excess portion of said conductive polymer material.
6. The method of claim 5 wherein the eat treating said conductive polymer material occurs before removing an excess portion of said conductive polymer material.
7. The method of claim 5 , wherein removing said excess portion of said conductive polymer material comprises etching said excess portion of said conductive polymer material.
8. The method of claim 7 , wherein etching said excess portion comprises using a plasma ambient process.
9. The method of claim 5 , wherein removing said excess portion of said conductive polymer material comprises performing a polishing process.
10. The method of claim 1 , wherein depositing said conductive polymer material comprises filling said trench pattern without causing an excess portion to form over edges of said trench pattern.
11. The method of claim 1 , wherein forming said trench pattern comprises forming said trench pattern so as to laterally correspond to a layout of at least a portion of a transistor.
12. The method of claim 11 , wherein said at least a portion of the layout comprises a drain terminal, a source terminal, a channel and a gate electrode.
13. The method of claim 1 , wherein forming a trench pattern in said dielectric material comprises forming at least one trench portion that has at least one lateral dimension that is less than 100 μm (micrometer).
14. The method of claim 1 wherein heat treating said conductive polymer material shrinks said conductive polymer material.
15. A method of forming a polymer microstructure, the method comprising:
using an optical lithography process to transfer a layout of a conductive pattern of a microstructure as a trench pattern in a dielectric material, said dielectric material being used as a radiation sensitive material during said optical lithography process;
filling said trench pattern with a conductive polymer material;
heat treating said conductive polymer material after filling said trench pattern with the conductive polymer material;
performing an oxygen plasma treatment to activate hydrophilic behavior on the trench pattern; and
selectively depositing a hydrophobic layer on a surface of the dielectric material, thereby creating a pattern that comprises said hydrophobic layer that corresponds to the dielectric material and hydrophilic channels inside the trench pattern.
16. The method of claim 15 , wherein said layout comprises a drain terminal, a source terminal, a channel and a gate electrode of an electrochemical transistor.
17. The method of claim 15 , wherein filling said trench pattern comprises depositing said conductive polymer material and removing a portion of said conductive polymer material to adjust a target height of said conductive polymer material in said trench pattern after heat treating said conductive polymer material.
18. The method of claim 17 , wherein removing said portion of said conductive polymer material comprises using a plasma based etch process.
19. The method of claim 17 , wherein removing said portion of said conductive polymer material comprises using a polishing process.
20. The method of claim 19 , wherein filling said trench pattern comprises spin coating or inkjet printing said conductive polymer material in hydrophilic channels based on a capillarity effect and removing said portion of said conductive polymer material comprises adjusting a target height of said conductive polymer material in said trench pattern.
21. The method of claim 20 , wherein removing said portion of said conductive polymer material comprises applying a plasma based etch process.
22. The method of claim 17 , further comprising depositing a sacrificial layer of a radiation sensitive material above said trench pattern and transferring said trench pattern to the sacrificial layer.
23. The method of claim 22 , further comprising performing a superficial treatment to selectively activate hydrophilic channels in the said trench pattern.
24. The method of claim 23 , further comprising removing said sacrificial layer.
25. The method of claim 15 , wherein depositing said conductive material comprises spin coating or inkjet printing the conductive material in said hydrophilic channels based on a capillarity effect and removing a portion of said conductive polymer material comprises adjusting a target height of said conductive polymer material in said trench pattern.
26. The method of claim 15 , wherein said trench pattern comprises a drain terminal, a source terminal, a channel and a gate electrode of an electrochemical transistor.
27. The method of claim 15 wherein heat treating said conductive polymer material shrinks said conductive polymer material.
28. A method comprising:
depositing a dielectric material over a surface of a substrate;
exposing first portions of the dielectric material to radiation while second portions of the dielectric material remain unexposed;
forming a trench pattern by removing one of the first portions or the second portions;
filling said trench pattern with a conductive polymer material;
heat treating said conductive polymer material after filling said trench pattern with the conductive polymer material;
selectively depositing a hydrophobic layer on a surface of the dielectric material; and
performing an oxygen plasma treatment to activate hydrophilic behavior on the trench pattern, thereby creating a pattern that comprises said hydrophobic layer that corresponds to the dielectric material and hydrophilic channels inside the trench pattern.
29. The method of claim 28 wherein said conductive polymer material is doped PEDOT:PSS.
30. The method of claim 28 wherein heat treating said conductive polymer material shrinks said conductive polymer material.
31. The method of claim 28 wherein filling said trench pattern with a conductive polymer material further comprises:
depositing said conductive polymer material over an upper surface of said dielectric; and
removing portions of said conductive polymer material after heat treating said conductive polymer material.
32. The method of claim 28 wherein depositing said dielectric material over said surface of said substrate further comprises depositing said dielectric material directly on said surface of said substrate.