REFERENCE VOLTAGE GENERATION CIRCUIT

1 . A reference voltage generation circuit, comprising

a first circuit including a variable resistor and a PN junction device connected in series,

the variable resistor and the PN junction device connected in series having a first current, that has temperature characteristics corresponding to a nonlinear component of temperature characteristics of an inter-terminal voltage of the PN junction device, caused to flow therethrough.

2 . The reference voltage generation circuit according to claim 1 , further comprising:

a second circuit configured to generate a second current having the same temperature characteristics as a differential voltage between inter-terminal voltages of two PN junction devices having different current densities; and

a third circuit configured to generate a third current having temperature characteristics corresponding to a nonlinear component of temperature characteristics of the inter-terminal voltages of the PN junction devices,

the first current being a current obtained by adding the second current and the third current.

3 . The reference voltage generation circuit according to claim 2 ,

wherein the second circuit includes

a first load circuit that is connected between a first node and a predetermined power-supply potential by a first PN junction device as one of the two PN junction devices having different current densities,

a second load circuit that is connected between a second node and the predetermined power-supply potential by a series connection of a second PN junction device as the other one of the two PN junction devices having different current densities and a first resistor,

a first current mirror circuit that transfers a current flowing through the first node to the second node so that the current flows through the second load circuit, and

a first control circuit that causes a potential of the first node to match a potential of the second node, and

wherein the second current is a current that flows through the first resistor.

4 . The reference voltage generation circuit according to claim 1 ,

wherein the first current is transferred to the first circuit by a second current mirror circuit and flows through the variable resistor and the PN junction device connected in series.

5 . The reference voltage generation circuit according to claim 3 ,

wherein the variable resistor of the first circuit has a current, that is transferred from the first node to the second node by the first current mirror circuit, flowing therethrough by being connected to the second node, and

wherein the PN junction device of the first circuit and the second PN junction device are shared.

6 . The reference voltage generation circuit according to claim 3 ,

wherein the third circuit includes

a third load circuit constituted of a second resistor that is connected between a third node and the predetermined power-supply potential,

a fourth load circuit constituted of a third PN junction device that is connected between a fourth node and the predetermined power-supply potential,

a second control circuit that causes a potential of a third resistor that connects the fourth node and the second node and potentials of the third node and the first node to match,

a third current mirror circuit that transfers a current flowing through the third node to the fourth node so that the current flows through the fourth load circuit, and

a fourth current mirror circuit that transfers a current flowing through the second node to the fourth node so that the current flows through the fourth load circuit, and

wherein the third current is a current that flows through the third resistor.

7 . The reference voltage generation circuit according to claim 6 ,

wherein the third resistor is connected to the fourth node via a buffer.

8 . A semiconductor device, comprising

the reference voltage generation circuit according to claim 1 .

9 . An electronic apparatus, comprising

the reference voltage generation circuit according to claim 1 .