Provided is a solar cell having improved photoelectric conversion efficiency. The solar cell ( 1 ) contains: a substrate ( 10 ) comprising a semiconductor material having one type of conductivity; a first semiconductor layer ( 12 n ) having the one type of conductivity; and a second semiconductor layer ( 17 n ) having the one type of conductivity. The first semiconductor layer ( 12 n ) is arranged on one main surface of the substrate ( 10 ). The second semiconductor layer ( 17 n ) is arranged on the other main surface of the substrate ( 10 ). The solar cell ( 1 ) is configured such that the strength of the electric field formed by the second semiconductor layer ( 17 n ) is greater than the strength of the electric field formed by the first semiconductor layer ( 12 n ).
1. A solar cell comprising:
a substrate comprising a semiconductor material having a first n or p type of conductivity;
a first semiconductor layer having the first n or p type of conductivity comprising linear portions of defined widths, lengths and thicknesses arranged on a back surface side of the substrate and having a u-shaped cross section;
a second semiconductor layer having the a first n or p of conductivity arranged on a light receiving surface side of the substrate; and
a third semiconductor layer having a second n or p type of conductivity opposite the first n or p type of conductivity and the conductivity of the substrate semiconductor material of the substrate, the third semiconductor layer comprising linear portions of defined widths, lengths and thicknesses arranged on the back surface side of the substrate, the first semiconductor layer further comprising an overlap region that overlaps the third semiconductor layer;
a first i-type semiconductor layer arranged between the first semiconductor layer and the substrate;
a second i-type semiconductor layer arranged between the second semiconductor layer and the substrate, the thickness of the second i-type semiconductor layer being from several Å to 250 Å;
a third i-type semiconductor layer arranged between the third semiconductor layer and the substrate;
an insulating layer arranged between the first semiconductor layer in the overlap region and the third Hype semiconductor layer;
a first electrode arranged on the first semiconductor layer; and
a second electrode arranged on the third semiconductor layer,
wherein the thickness of the first i-type semiconductor layer is more than one-third but less than the thickness of the second i-type semiconductor layer, and the strength of the electric field formed by the second semiconductor layer is greater than the strength of the electric field formed by the first semiconductor layer,
wherein the concentration of dopant in the second semiconductor layer is greater than the concentration of dopant in the first semiconductor layer,
wherein the first electrode and the second electrode are separated via an interval which is arranged above the insulating layer, and
wherein the interval completely penetrates the first semiconductor layer and the first i-type semiconductor layer in the overlap region.
2. The solar cell according to claim 1 , wherein the thickness of the second semiconductor layer is greater than the thickness of the first semiconductor layer.
3. The solar cell according to claim 1 ,
wherein the width of the linear portions of the first semiconductor layer is no more than 0.7 times the width of the linear portions of the third semiconductor layer.
4. The solar cell according to claim 1 ,
wherein the defined widths of the linear portions of the first semiconductor layer are less than twice the thickness of the substrate.
5. The solar cell according to claim 1 , wherein at least one of the first and second semiconductor layers contains hydrogen;
the content of hydrogen in the first semiconductor layer being less than the content of hydrogen in the second semiconductor layer.
6. The solar cell according to claim 3 , wherein the width of the linear portions of the first semiconductor layer is no more than 0.6 times the width of the linear portions of the third semiconductor layer.
7. The solar cell according to claim 1 , wherein the first semiconductor layer is n-type.
8. The solar cell according to claim 3 , wherein the first semiconductor layer is n-type.
9. The solar cell according to claim 4 , wherein the first semiconductor layer is n-type and the width is no more than 0.4 times the thickness of the substrate.
10. The solar cell according to claim 4 , wherein the first semiconductor layer is n-type and the width is no more than 0.8 times the thickness of the substrate.
11. The solar cell of claim 1 , wherein:
the first semiconductor layer is arranged on a back surface side of the substrate;
the second semiconductor layer is arranged on a light receiving surface side of the main surface of the substrate;
each of the first and third semiconductor layers has a plurality of linear portions; and
wherein the width of the linear portions of the first semiconductor layer arranged on the substrate is less than the width of the linear portions of the third semiconductor layer arranged on the substrate.
12. The solar cell of claim 1 , wherein the concentration of dopant in the second semiconductor layer is greater than the concentration of dopant in the first semiconductor layer.