PHOTOELECTRIC CONVERSION DEVICE AND METHOD FOR PRODUCING SAME
A photovoltaic device ( 10 ) is provided with: an n-type monocrystalline silicon substrate ( 21 ); an IN layer ( 25 ) layered over one surface of the n-type monocrystalline silicon substrate ( 21 ); an IP layer ( 26 ) layered over a region, of one surface of the IN layer 25, where the IN layer ( 25 ) is not layered, and layered so as to have an overlap region ( 26 *) which is overlapped with the region where the IN layer ( 25 ) is layered; an n-side electrode ( 40 ) electrically connected to the IN layer ( 25 ) and formed over the overlap region ( 26 *); and a p-side electrode ( 50 ) formed distanced from the n-side electrode ( 40 ) and electrically connected to the IP layer ( 26 ). In the IP layer ( 26 ), a separation gap ( 60 ) is formed between a region where the n-side electrode ( 40 ) is formed and a region where the p-side electrode ( 50 ) is formed.
1 . A photovoltaic device, comprising:
a crystalline semiconductor substrate;
a first amorphous semiconductor layer which is layered over one surface of the crystalline semiconductor substrate;
a second amorphous semiconductor layer which includes a layer of an opposite conductive type as that of the first amorphous semiconductor layer, the second amorphous layer being layered over a region of the one surface of the crystalline semiconductor substrate where the first amorphous semiconductor layer is not layered, and the second amorphous layer being layered so as to have an overlap region which is overlapped with the region where the first amorphous semiconductor layer is layered;
a first electrode which is electrically connected to the first amorphous semiconductor layer and which is formed over the overlap region of the second amorphous semiconductor layer; and
a second electrode which is formed distanced from the first electrode and electrically connected to the second amorphous semiconductor layer, wherein
the second amorphous semiconductor layer has a separation gap or a thin film region where a thickness is thinner than other regions, between a region where the first electrode is formed and a region where the second electrode is formed.
2 . The photovoltaic device according to claim 1 , wherein the second amorphous semiconductor layer is layered over the first amorphous semiconductor layer with an insulating layer therebetween.
3 . The photovoltaic device according to claim 1 , wherein
a separation channel which separates the first electrode and the second electrode is formed in the overlap region.
4 . The photovoltaic device according to claim 2 , wherein
a separation channel which separates the first electrode and the second electrode is formed in the overlap region.
5 . The photovoltaic device according to claim 3 , wherein
the separation gap or the thin film region is formed along the separation channel.
6 . The photovoltaic device according to claim 4 , wherein
the separation gap or the thin film region is formed along the separation channel.
7 . A method of producing a photovoltaic device, comprising:
a step of layering a first amorphous semiconductor layer over one surface of a crystalline semiconductor substrate;
a step of layering a second amorphous semiconductor layer over a region, of the one surface of the crystalline semiconductor substrate, where the first amorphous semiconductor layer is not layered, and over a part of a region where the first amorphous semiconductor layer is layered, the second amorphous semiconductor layer including a layer of an opposite conductive type as that of the first amorphous semiconductor layer;
an electrode forming step in which a first electrode is formed over the first amorphous semiconductor layer and over an overlap region of the second amorphous semiconductor layer overlapped with the first amorphous semiconductor layer, and a second electrode is formed over the second amorphous semiconductor layer distanced from the first electrode; and
a removal step in which at least a part of the second amorphous semiconductor layer which exists between the first electrode and the second electrode is removed.
8 . The method of producing the photovoltaic device according to claim 7 , further comprising:
a step of layering an insulating layer over a part of the first amorphous semiconductor layer, wherein
in the step of layering the second amorphous semiconductor layer, the second amorphous semiconductor layer is layered over the first amorphous semiconductor layer with the insulating layer therebetween.
9 . The method of producing the photovoltaic device according to claim 7 , wherein
the electrode forming step comprises:
a step of forming, over the first amorphous semiconductor layer and the second amorphous semiconductor layer, at least one conductive layer forming the first electrode and the second electrode; and
a step of partially removing the conductive layer in the overlap region of the second amorphous semiconductor layer to separate the conductive layer into a first electrode conductive layer forming the first electrode and a second electrode conductive layer forming the second electrode.
10 . The method of producing the photovoltaic device according to claim 8 , wherein
the electrode forming step comprises:
a step of forming, over the first amorphous semiconductor layer and the second amorphous semiconductor layer, at least one conductive layer forming the first electrode and the second electrode; and
a step of partially removing the conductive layer in the overlap region of the second amorphous semiconductor layer to separate the conductive layer into a first electrode conductive layer forming the first electrode and a second electrode conductive layer forming the second electrode.
11 . The method of producing the photovoltaic device according to claim 9 , wherein
in the removal step, at least a part of the overlap region of the second amorphous semiconductor layer which is exposed is removed using the first electrode conductive layer and the second electrode conductive layer as a mask.
12 . The method of producing the photovoltaic device according to claim 10 , wherein
in the removal step, at least a part of the overlap region of the second amorphous semiconductor layer which is exposed is removed using the first electrode conductive layer and the second electrode conductive layer as a mask.
13 . The method of producing the photovoltaic device according to claim 11 , wherein
in the removal step, the overlap region of the second amorphous semiconductor layer which is exposed is removed along a region between the first electrode conductive layer and the second electrode conductive layer.
14 . The method of producing the photovoltaic device according to claim 12 , wherein
in the removal step, the overlap region of the second amorphous semiconductor layer which is exposed is removed along a region between the first electrode conductive layer and the second electrode conductive layer.
15 . The method of producing the photovoltaic device according to claim 11 , wherein
the electrode forming step further includes a step of forming, through electroplating which uses the first electrode conductive layer and the second electrode conductive layer as seeds, metal-plating layers over the seeds, after the removal step.
16 . The method of producing the photovoltaic device according to claim 12 , wherein
the electrode forming step further includes a step of forming, through electroplating which uses the first electrode conductive layer and the second electrode conductive layer as seeds, metal-plating layers over the seeds, after the removal step.
17 . The method of producing the photovoltaic device according to claim 13 , wherein
the electrode forming step further includes a step of forming, through electroplating which uses the first electrode conductive layer and the second electrode conductive layer as seeds, metal-plating layers over the seeds, after the removal step.
18 . The method of producing the photovoltaic device according to claim 14 , wherein
the electrode forming step further includes a step of forming, through electroplating which uses the first electrode conductive layer and the second electrode conductive layer as seeds, metal-plating layers over the seeds, after the removal step.