Solid-state imaging apparatus, manufacturing method for the same, and electronic apparatus

1. A solid-state imaging apparatus, comprising:

a semiconductor substrate on which a plurality of pixels is formed;

an upper layer film varying in thickness and laminated on the semiconductor substrate; and

on-chip lenses formed on the upper layer film so as to correspond to respective pixels, a pupil correction amount of at least one of the on-chip lenses being changed depending on a distance between a center of a pixel area and the at least one on-chip lens, and depending on the film thickness of the upper layer film at a position of the at least one on-chip lens on the upper layer film, wherein the film thickness of the upper layer film at the position of the at least one on-chip lens is the distance between the at least one on-chip lens and the semiconductor substrate.

2. The solid-state imaging apparatus according to claim 1 , wherein the film thickness of the upper layer film is represented by a function of a distance from a factor differentiating the film thickness of the upper layer film.

3. The solid-state imaging apparatus according to claim 2 , wherein the function is a linear function.

4. The solid-state imaging apparatus according to claim 2 , wherein the function is a non-linear function.

5. The solid-state imaging apparatus according to claim 2 , wherein the upper layer film includes color filters formed so as to correspond to the respective pixels, and wherein a pupil correction amount of one of the color filters is changed depending on a distance between the center of the pixel area and the color filter, and depending on a film thickness of the upper layer film at a position of the color filter on the upper layer film.

6. The solid-state imaging apparatus according to claim 2 , wherein the upper layer film includes light-shielding films formed so as to correspond to the respective pixels, and wherein a pupil correction amount of one of the light-shielding films is changed depending on a distance between the center of the pixel area and the light-shielding film, and depending on a film thickness of the upper layer film at a position of the light-shielding film on the upper layer film.

7. The solid-state imaging apparatus according to claim 2 , wherein the factor differentiating the film thickness of the upper layer film is an OPB (Optical Black) pixel.

8. The solid-state imaging apparatus according to claim 2 , wherein the factor differentiating the film thickness of the upper layer film is a through hole via.

9. The solid-state imaging apparatus according to claim 2 , wherein the factor differentiating the film thickness of the upper layer film is an electrode pad.

10. The solid-state imaging apparatus according to claim 2 , wherein the factor differentiating the film thickness of the upper layer film is a wiring.

11. The solid-state imaging apparatus according to claim 2 , wherein the factor differentiating the film thickness of the upper layer film is a scribe line.

12. A method of producing a solid-state imaging apparatus including a semiconductor substrate on which a plurality of pixels is formed, an upper layer film varying in thickness and laminated on the semiconductor substrate, and on-chip lenses formed on the upper layer film so as to correspond to the respective pixels, comprising:

forming the on-chip lenses by changing a pupil correction amount of one or more of the on-chip lenses depending on a distance between a center of a pixel area and the one or more on-chip lenses, and depending on a film thickness of the upper layer film at a position of the one or more on-chip lenses on the upper layer film, wherein the film thickness of the upper layer film at the position of the one or more on-chip lenses is the distance between the one or more on-chip lenses and the semiconductor substrate.

13. The method according to claim 12 , wherein the film thickness of the upper layer film is represented by a function of a distance from a factor differentiating the film thickness of the upper layer film.

14. The method according to claim 13 , wherein the function is at least one of a linear function and a non-linear function.

15. The method according to claim 13 , wherein the factor differentiating the film thickness of the upper layer film is at least one of a through hole via, an electrode pad, a wiring, an OPB (Optical Black) pixel, and a scribe line.

16. An electronic apparatus, comprising

a solid-state imaging apparatus including:

a semiconductor substrate on which a plurality of pixels is formed;

an upper layer film varying in thickness and laminated on the semiconductor substrate; and

on-chip lenses formed on the upper layer film so as to correspond to respective pixels, a pupil correction amount of at least one of the on-chip lenses being changed depending on a distance between a center of a pixel area and the at least one on-chip lens, and depending on a film thickness of the upper layer film at a position of the at least one on-chip lens on the upper layer film, wherein the film thickness of the upper layer film at the position of the at least one on-chip lens is the distance between the at least one on-chip lens and the semiconductor substrate.

17. The electronic apparatus according to claim 16 , wherein the film thickness of the upper layer film is represented by a function of a distance from a factor differentiating the film thickness of the upper layer film.

18. The electronic apparatus according to claim 16 , wherein the factor differentiating the film thickness of the upper layer film is at least one of a through hole via, an electrode pad, a wiring, an OPB (Optical Black) pixel, and a scribe line.

19. The electronic apparatus according to claim 17 , wherein the function is a linear function.

20. The electronic apparatus according to claim 17 , wherein the function is a non-linear function.