IP Library Granted Patent US 9,070,842
Granted Patent B2
US 9,070,842 · App. 14/035,943 · Granted Jun 30, 2015

Light-emitting diode manufacturing method

Inventors: Pin-Chuan Chen (Hsinchu, TW); Lung-Hsin Chen (Hsinchu, TW)
Assignee: Zhongshan Innocloud Intellectual Property Services Co., Ltd.
H01L33/50H01L33/60H01L2933/0041H01L2933/005
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Quick Facts
Patent No.
US 9,070,842
App. No.
14/035,943
Granted
Jun 30, 2015
Kind
B2
Abstract

A light-emitting diode manufacturing method comprises steps of: providing a flexible material layer having a flexible reflective layer and phosphor glue in the flexible reflective layer; providing a hard material layer having a substrate and an LED chip on the substrate; combining the flexible material layer and the hard material layer together wherein the LED chip inserts into the phosphor glue and is surrounded by the flexible reflective layer; and solidifying the flexible reflective layer and the phosphor glue to form a reflective cup and a phosphor layer, respectively.

Claims (14)

1. A light-emitting diode manufacturing method, comprising the steps of:

providing a flexible layer, wherein the flexible material layer comprises a flexible reflective layer and phosphor glue;

providing a hard material layer, wherein the hard material layer comprises a substrate and at least one chip set on the substrate;

combining the flexible material layer an the hard material layer, wherein the at least one chip is brought to insert into the phosphor glue, the flexible reflective layer is extruded to connect with the substrate; and

solidifying the flexible reflective layer and the phosphor glue to form at least one reflective cup surrounding the at least one chip and a phosphor layer receiving the at least one chip therein.

2. The light-emitting diode manufacturing method as claimed in claim 1 , wherein the step of providing a flexible material layer comprising: providing a flexible reflective layer, on the flexible reflective layer opening at least one first cavity which penetrates the flexible reflective layer and filling the at least one first cavity with the phosphor glue.

3. The light-emitting diode manufacturing method as claimed in claim 2 , wherein the step of providing a flexible material layer further comprises: forming a first supporting layer which overlays the surface of the flexible reflective layer prior to opening the at least one first cavity; and in the step of opening the at least one first cavity, the at least one first cavity also penetrates the first supporting layer.

4. The light-emitting diode manufacturing method as claimed in claim 3 , wherein before filling with the phosphor glue, removing the first supporting layer and forming a second supporting layer on the other opposite surface of the flexible reflective layer, when filling with the phosphor glue, it is held by the second supporting layer.

5. The light-emitting diode manufacturing method as claimed in claim 1 , wherein the substrate comprises at least one first protrusion which locates on the same surface with the at least one chip, when the flexible material layer combines with the hard material layer, the at least one first protrusion tenons into the flexible reflective layer.

6. The light-emitting diode manufacturing method as claimed in claim 5 , wherein the at least one first protrusion has a shape of a ring which surrounds the at least one chip.

7. The light-emitting diode manufacturing method as claimed in claim 2 , wherein the phosphor glue fills the at least one first cavity and protrudes to form a second protrusion above the at least one first cavity.

8. The light-emitting diode manufacturing method as claimed in claim 7 , wherein the substrate further comprises a second cavity and the at least one chip locates in the second cavity, and when the flexible material layer combines the hard material layer, the second protrusion of the phosphor glue fills in the second cavity.

9. The light-emitting diode manufacturing method as claimed in claim 8 , wherein the shape of the second protrusion of the phosphor glue is the same as the shape of the second cavity.

10. The light-emitting diode manufacturing method as claimed in claim 1 , wherein the flexible reflective layer and the phosphor glue are cured by high temperature bake to form the at least one reflective cup and the phosphor layer, separately.

Assignments (4)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 10, 2019
From: ZHONGSHAN INNOCLOUD INTELLECTUAL PROPERTY SERVICES CO.,LTD.
To: SCIENBIZIP CONSULTING(SHENZHEN)CO.,LTD.
Reel/Frame 050709/0949 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 19, 2015
From: SCIENBIZIP CONSULTING(SHENZHEN)CO.,LTD.
To: ZHONGSHAN INNOCLOUD INTELLECTUAL PROPERTY SERVICES CO.,LTD.
Reel/Frame 035443/0416 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 7, 2015
From: ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.
To: SCIENBIZIP CONSULTING(SHENZHEN)CO.,LTD.
Reel/Frame 035352/0857 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 25, 2013
From: CHEN, PIN-CHUAN; CHEN, LUNG-HSIN
To: ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.
Reel/Frame 031273/0027 →
Priority Claims (1)
CN 2012 1 0561110 · Dec 21, 2012 · national
Continuity (1)
Related Publication 20140179042A1 · Jun 26, 2014