Long wavelength quantum cascade lasers based on high strain composition
View Patent ↗An improved longwave infrared quantum cascade laser. The improvement includes a strained In x Ga 1-x As/Al y In 1-y As composition, with x and y each between 0.53 and 1, an active region emitting at a wavelength equal to or greater than 8 μm, an energy spacing E 54 equal to or greater than 50 meV, an energy spacing E C4 equal to or greater than 250 meV, and an optical waveguide with a cladding layer on each side of the active region. Each cladding layer has a doping level of about 2·10 16 cm −3 . The optical waveguide also has a top InP layer with a doping level of about 5·10 16 cm −3 and a bottom InP layer with a doping level of about 5 10 16 cm −3 . Additionally, the optical waveguide has a plasmon layer with a doping level of about 8·10 18 cm −3 .
1. An improved longwave infrared quantum cascade laser, the improvement comprising:
(a) a highly strained In 0.5840 Ga 0.4160 As/Al 0.6417 In 0.3583 As composition;
(b) an active region having 45 stages and emitting at a wavelength of 9 μm;
(c) an energy spacing E 54 of 60 meV;
(d) an energy spacing E C4 of 430 meV; and
(e) an optical waveguide with 3 μm thick cladding layers adjacent the active region, the cladding layers having a doping level of 2·10 16 cm −3 , the optical waveguide further having a 4 μm thick top InP layer with a doping level of 5·10 16 cm −3 and a 2 μm thick bottom InP layer with a doping level of 5·10 16 cm −3 , the optical waveguide further having a 1 μm thick plasmon layer with a doping level of 8·10 18 cm −3 , where the optical waveguide results a free-carrier waveguide loss of 2.1 cm −1 and a mode overlap factor with the active region of 52%.
2. An improved longwave infrared quantum cascade laser, the improvement comprising:
(a) a strained In x Ga 1-x As/Al y In 1-y As composition, where x is between 0.53 and 1 and y is between 0.53 and 1;
(b) an active region emitting at a wavelength equal to or greater than 8 μm;
(c) an energy spacing E 54 equal to or greater than 50 meV;
(d) an energy spacing E C4 equal to or greater than 250 meV; and
(e) an optical waveguide with a cladding layer on each side of the active region, each cladding layer having a doping level of 2·10 16 cm −3 , the optical waveguide further having a top InP layer with a doping level of 5·10 16 cm −3 and a bottom InP layer with a doping level of 5·10 16 cm −3 , the optical waveguide further having a plasmon layer with a doping level of 8·10 18 cm −3 , where x=0.5840 and y=0.6417.