Non-volatile memory device and manufacturing method thereof
View Patent ↗A non-volatile memory device of the present invention comprises a first electrode; a variable resistance layer formed on and above the first electrode; a second electrode formed on and above the variable resistance layer; a side wall protective layer having an insulativity and covering a side wall of the first electrode, a side wall of the variable resistance layer and a side wall of the second electrode; and an electrically-conductive layer connected to the second electrode; the non-volatile memory device including a connection layer which is provided between the second electrode and the electrically-conductive layer to connect the second electrode and the electrically-conductive layer to each other, and comprises an electrically-conductive material different from a material constituting the electrically-conductive layer; wherein the side wall protective layer extends across the second electrode to a position which is above an upper end of the second electrode and below an upper end of the connection layer such that an upper end of the side wall protective layer is located above the upper end of the second electrode and below the upper end of the connection layer, when viewed from a side.
1. A non-volatile memory device comprising:
a first electrode;
a variable resistance layer formed on and above the first electrode;
a second electrode formed on and above the variable resistance layer;
a side wall protective insulating layer covering a side wall of the first electrode, a side wall of the variable resistance layer and a side wall of the second electrode;
an interlayer insulating layer covering at least a part of the side wall protective insulating layer;
an electrically-conductive layer; and
a connection layer which is provided between the second electrode and the electrically-conductive layer to connect the second electrode and the electrically-conductive layer to each other, and comprises an electrically-conductive material different from a material constituting the electrically-conductive layer, wherein:
the side wall protective insulating layer extends across the second electrode to a position which is above an uppermost end of the second electrode and below an uppermost end of the connection layer and an uppermost end of the side wall protective insulating layer is located above the uppermost end of the second electrode and below the uppermost end of the connection layer, when viewed from a side,
the electrically-conductive layer covers an entirety of the connection layer, when viewed from a thickness direction, and
the electrically-conductive layer directly contacts with at least a portion of the side wall protective insulating layer.
2. The non-volatile memory device according to claim 1 ,
wherein the side wall protective insulating layer comprises at least one material selected from the group consisting of an oxide, a nitride, and an oxynitride.
3. The non-volatile memory device according to claim 1 ,
wherein the side wall protective insulating layer comprises at least one material selected from the group consisting of a silicon nitride, an aluminum oxide, and a titanium oxide.
4. The non-volatile memory device according to claim 1 ,
wherein the side wall protective insulating layer is configured such that a thickness a in a position of a height x from a horizontal plane passing through a lower end of the first electrode and a thickness b in a position of a height y from the lower end of the first electrode satisfy a >b when x <y.
5. The non-volatile memory device according to claim 1 , wherein the variable resistance layer includes at least two layers including:
a first variable resistance layer comprising a first metal oxide; and
a second variable resistance layer comprising a second metal oxide having a higher oxygen content in atomic percentage than the first metal oxide.
6. The non-volatile memory device according to claim 5 ,
wherein each of the first metal oxide and the second metal oxide constituting the variable resistance layer comprises at least one metal oxide selected from the group consisting of transition metal oxides and an aluminum oxide.
7. The non-volatile memory device according to claim 5 ,
wherein each of the first metal oxide and the second metal oxide constituting the variable resistance layer comprises at least one metal oxide selected from the group consisting of a tantalum oxide, a hafnium oxide and a zirconium oxide.
8. The non-volatile memory device according to claim 1 , further comprising:
a diode element connected to at least one of he first electrode and the second electrode.
9. The non-volatile memory device according to claim 1 , wherein the uppermost end of the second electrode is located above a lowermost end of the electrically-conductive layer.
10. The non-volatile memory device according to claim 1 , wherein the side wall protective insulating layer does not cover an upper surface of the second electrode.
11. The non-volatile memory device according to claim 1 , wherein the uppermost end of the connection layer is located above a lowermost end of the electrically-conductive layer and below an uppermost end of the electrically-conductive layer.
12. The non-volatile memory device according to claim 1 , wherein the connection layer covers an entirety of an upper surface of the second electrode, when viewed from the thickness direction.
13. The non-volatile memory device according to claim 12 , wherein the electrically-conductive layer further covers at least a portion of the side wall protective insulating layer located outward relative to the second electrode, when viewed from the thickness direction.
14. The non-volatile memory device according to claim 1 , wherein a portion of the side wall protective insulating layer is located between the interlayer insulating layer and the variable resistance layer.