Apparatus for measuring the optoelectronic characteristics of light-emitting diode with a light gathering unit completely covers a sample holder during the measurement
View Patent ↗An apparatus for measuring the optoelectronic characteristics of a light-emitting diode includes: a container including a light input port and a light output port; a measurement module connected to the light output port of the container; a sample holder under the container for holding a light-emitting diode under test, wherein a surface of the measurement module reflects more than 50% of the luminous flux generated by the light-emitting diode under test; and a light gathering unit between the container and the sample holder, wherein an interior wall of the light gathering unit reflects more than 50% of the luminous flux generated by the light-emitting diode under test.
1. An apparatus measuring the optoelectronic characteristics of a light emitting diode, comprising:
a container comprising a light input port and a light output port;
measurement module connected to the light output port of the container;
a sample holder under the container for holding a light-emitting diode under test, wherein a surface of the sample holder reflects more than 50% of the luminous flux generated by the light emitting diode under test; and
a light gathering unit between the container and the sample holder, wherein an interior wall of the light gathering unit reflects more than 50% of the luminous flux generated by the light-emitting diode under test, and the light gathering unit has a width greater than a width of the light input port of the container, and wherein the light gathering unit completely covers the sample holder during the measurement.
2. The apparatus for measuring the optoeleotronic characteristics of a light-emitting diode according to claim 1 , further comprising a power supply providing current or voltage for the light-emitting diode under test.
3. The apparatus for measuring the optoelectronic characteristics of a light-emitting diode according to claim 1 , wherein the sample holder comprises a holder body and a film formed on the holder body, and the film is composed of a material reflecting more than 50% of the luminous flux generated by the light-emitting diode under test.
4. The apparatus for measuring the optoelectronic characteristics of a light-emitting diode according to claim 1 , wherein the light gathering unit comprises a base and a layer formed on an interior wall of the base, and the layer is composed of a material reflecting more than 50% of the luminous flux generated by the light-emitting diode under test.
5. The apparatus for measuring the optoeleotronic characteristics of a light-emitting diode according to claim 1 , wherein the container is a hollow sphere.
6. The apparatus for measuring the optoelectronic characteristics of a light-emitting diode according to claim 1 , wherein the light-emitting diode under test is in unpackaged wafer form.
7. The apparatus measuring the optoelectronic characteristics of a light-emitting diode according to claim 1 , further comprising two probes for measuring the light-emitting diode under test.
8. The apparatus for measuring the optoelectronic characteristics of a light-emitting diode according to claim 7 , wherein the light gathering unit comprises two holes each receiving one of the two probes therethrough respectively.
9. The apparatus to measuring the optoelectronic characteristics of a light-emitting diode according to claim 7 , wherein each probe has a bend angle.
10. The apparatus for measuring the optoelectronic characteristics of a light-emitting diode according to claim 1 , in the measurement module comprises a spectrometer.
11. The apparatus for measuring the optoelectronic characteristics of a light-emitting diode according to claim 1 , wherein the light gathering unit completely covers the light-emitting diode under test during the measurement.
12. The apparatus for measuring the optoelectronic characteristics of a light-emitting diode according to claim 9 , wherein each bend angle ranges from 120 degrees to 150 degrees.