Electro-polishing and porosification
View Patent ↗Forming a porous layer on a silicon substrate is disclosed. Forming the porous layer can include placing a silicon substrate in a first solution and conducting a first current through the silicon substrate. It can further include conducting a second current through the silicon substrate resulting in a porous layer on the silicon substrate.
1. A method, comprising: placing a silicon substrate in a first solution; conducting a first current through the silicon substrate in the first solution; and conducting a second current through the silicon substrate resulting in a porous layer on the silicon substrate, wherein conducting the first current comprises conducting the first current with a current density of 1-100 mA/cm 2 , resulting in a polished layer on the silicon substrate, wherein the first current flattens a surface of the silicon substrate; and conducting the second current comprises conducting the second current with a current density of 0.1-50 mA/cm 2 , resulting in a porous layer on the polished layer on the silicon substrate.
2. The method of claim 1 , wherein conducting the first current comprises applying a high bias voltage.
3. The method of claim 1 , wherein conducting the second current comprises applying a low bias voltage.
4. The method of claim 1 , wherein conducting the first current results in electro-polishing the silicon substrate.
5. The method of claim 1 , wherein conducting the first current comprises conducting the first current that is based on a size of the silicon substrate.
6. The method of claim 1 , wherein conducting the first current comprises conducting the first current that is based on a concentration of the solution.
7. The method of claim 1 , wherein conducting the second current comprises conducting the second current that is based on a size of the silicon substrate.
8. The method of claim 1 , wherein conducting the second current comprises conducting the second current that is based on a concentration of the solution.
9. The method of claim 1 , wherein placing the silicon substrate in the first or second solution comprises placing the silicon substrate in a solution comprised of a chemical selected from the group consisting of hydrofluoric acid (HF), isopropyl alcohol (IPA) and ethanol.
10. The method of claim 1 , wherein conducting the second current through the silicon substrate comprises conducting the second current through the silicon substrate in a second solution.
11. The method of claim 10 , wherein conducting the second current through the silicon substrate in the second solution comprises conducting the second current through the silicon substrate in a porosification solution.
12. A method for forming a porous layer on a silicon substrate, the method comprising: placing a silicon substrate in a first solution; applying a high bias voltage through the silicon substrate, resulting in a polished layer on the silicon substrate, wherein the high bias voltage flattens a surface of the silicon substrate; placing a silicon substrate in a second solution; and forming a porous layer on the polished layer, wherein forming the porous layer includes applying a low bias voltage through the silicon substrate.
13. The method of claim 12 , wherein placing the silicon substrate in the first solution comprises placing the silicon substrate in an electro-polishing solution.
14. The method of claim 12 , wherein placing the silicon substrate in the second solution comprises placing the silicon substrate in a porosification solution.
15. The method of claim 12 , wherein placing the silicon substrate in the first or second solution comprises placing the silicon substrate in a solution comprised of a chemical selected from the group consisting of hydrofluoric acid (HF), isopropyl alcohol (IPA) and ethanol.
16. A method for forming a porous layer on a silicon substrate, the method comprising: placing a silicon substrate in an electro-polishing solution; electro-polishing the silicon substrate, wherein electro-polishing includes conducting a first current through the silicon substrate, resulting in a polished layer on the silicon substrate, wherein the first current flattens a surface of the silicon substrate; placing the silicon substrate in a porosification solution; and forming a porous layer on the polished layer, wherein forming the porous layer includes conducting a second current through the silicon substrate.
17. The method of claim 16 , wherein conducting the first current comprises applying a high bias voltage.
18. The method of claim 16 , wherein conducting the second current comprises applying a low bias voltage.
19. The method of claim 16 , wherein placing the silicon substrate in the electro-polishing or porosification solution comprises placing the silicon substrate in a solution comprised of a chemical selected from the group consisting of hydrofluoric acid (HF), isopropyl alcohol (IPA) and ethanol.