Enhanced porosification

1. A method for forming a porous layer on a silicon substrate, the method comprising: placing a first silicon substrate in a solution, wherein a first electrode is within a threshold distance of a first edge of the first silicon substrate; and conducting a first current through the first silicon substrate, wherein the first electrode's position being within the threshold distance of the first edge allows for substantially uniform porosification along the first edge of the first silicon substrate, wherein said conducting results in the first electrode drawing current away from the first edge of the first silicon substrate.

2. The method of claim 1 wherein the first electrode's position being within a second threshold distance of a second edge of the first silicon substrate allows for substantially uniform porosification along the second edge of the first silicon substrate.

3. A method for forming a porous layer on a silicon substrate, the method comprising: placing a first silicon substrate in a solution, wherein a first electrode is within a threshold distance of a first edge of the first silicon substrate; and conducting a first current through the first silicon substrate, wherein the first electrode's position being within the threshold distance of the first edge allows for substantially uniform porosification along the first edge of the first silicon substrate, further comprising the first electrode conducting a second current along the first edge of the first silicon substrate.

4. A method for forming a porous layer on a silicon substrate, the method comprising: placing a first silicon substrate in a solution, wherein a first electrode is within a threshold distance of a first edge of the first silicon substrate; and conducting a first current through the first silicon substrate, wherein the first electrode's position being within the threshold distance of the first edge allows for substantially uniform porosification along the first edge of the first silicon substrate, wherein the first electrode at least partially surrounds perimeter edges of the first silicon substrate, wherein the first electrode's position relative to the perimeter edges allows for substantially uniform porosification along the perimeter edges.

5. The method of claim 1 , wherein placing a first silicon substrate in the solution comprises placing a non-circular silicon substrate in the solution.

6. The method of claim 1 , wherein placing the first silicon substrate in the solution comprises placing the first silicon substrate in a porosification solution.

7. The method of claim 1 , wherein placing the first silicon substrate in a solution comprises placing the first silicon substrate in a solution comprised of a chemical selected from the group consisting of hydrofluoric acid (HF), isopropyl alcohol (IPA) and ethanol.

8. The method of claim 1 further comprising:

placing a second silicon substrate in the solution, the second silicon substrate substantially parallel and non-planar to the first silicon substrate; and

wherein conducting the first current includes conducting the first current through the first and second silicon substrates, wherein placement of the first electrode allows for substantially uniform porosification along the first edge of both the first and second silicon substrates.

9. The method of claim 8 wherein placement of the first electrode allows for substantially uniform porosification along a second edge of both the first and second silicon substrates.

10. A method of forming a porous layer on a silicon substrate, the method comprising:

placing a first silicon substrate in a solution, the first silicon substrate positioned between a second and third electrode, wherein a first electrode is positioned along a first perimeter edge of the first silicon substrate; and

conducting a first current from the second electrode to the third electrode through the first silicon substrate, wherein placement of the first electrode relative to the first perimeter edge allows for substantially uniform porosification along the first perimeter edge of the first silicon substrate.

11. The method of claim 10 , wherein placement of the first electrode relative to a second perimeter edge of the first silicon substrate allows for substantially uniform porosification along the second perimeter edge of the first silicon substrate.

12. The method of claim 10 further comprising:

placing a second silicon substrate between the first silicon substrate and the third electrode, the second silicon substrate substantially parallel and non-planar to the first silicon substrate; and

wherein conducting the first current includes conducting the first current through the first and second silicon substrates, the placement of the first electrode allowing for substantially uniform porosification along the respective first perimeter edge of both the first and second silicon substrates.

13. The method of claim 10 , wherein placement of the first electrode is within first and seconde threshold distances relative to respective first perimeter edges of the first and second silicon substrates, respectively, allowing for substantially uniform porosification along both the first perimeter edges of the first and second silicon substrates.

14. The method of claim 13 , wherein the first threshold distance is different than the second threshold distance.

15. The method of claim 10 , further comprising the first electrode conducting a second current along the first perimeter edge of the first silicon substrate.

16. A method of forming a porous layer on a silicon substrate, the method comprising:

placing a first silicon substrate in a solution, the first silicon substrate positioned between a second and third electrode, wherein a first electrode is physically separated from the solution by a cationic membrane and at least partially surrounds perimeter edges of the first silicon substrate; and

conducting a first current from the second electrode to the third electrode through the first silicon substrate, wherein placement of the first electrode relative to the perimeter edges allows for substantially uniform porosification along the perimeter edges of the first silicon substrate.

17. The method of claim 16 further comprising:

placing a second silicon substrate between the first silicon substrate and the third electrode, the second silicon substrate substantially parallel and non-planar to the first silicon substrate, wherein the cationic membrane physically separates the first silicon substrate from second silicon substrate; and

conducting a first current from the second electrode to the third electrode through the first and second silicon substrates, wherein placement of the first electrode relative to the perimeter edges of the first silicon substrate allows for substantially uniform porosification along the perimeter edges of the first and second silicon substrates.

18. The method of claim 16 , wherein said conducting results in the first electrode drawing current away from the perimeter edges of the silicon substrate.

19. The method of claim 16 , further comprising the first electrode conducting a second current along the perimeter edges of the first silicon substrate.