DEVICES INCLUDING QUANTUM DOTS AND METHOD
A method for preparing a device, the method comprising: forming a first device layer over a first electrode, the layer comprising a metal oxide formed from a sol-gel composition that does not generate acidic by-products, and forming a second electrode over the first device layer, wherein the method further includes forming a layer comprising quantum dots over the first electrode before or after formation of the first device layer. Also disclosed is a device comprising a first device layer formed over a first electrode, the first device layer comprising a metal oxide formed by sol-gel processing that does not include acidic by-products, a second electrode over the first device layer, and a layer comprising quantum dots disposed between the first device layer and one of the two electrodes. A device prepared by the method is also disclosed.
1 . A method for preparing a device, the method comprising:
forming a first device layer over a first electrode, the layer comprising a metal oxide formed from a sol-gel composition that does not generate acidic by-products, and
forming a second electrode over the first device layer,
wherein the method further includes forming a layer comprising quantum dots over the first electrode before or after formation of the first device layer.
2 . A method in accordance with claim 1 wherein the sol gel composition comprises a metal oxide precursor comprising a metal hydroxide, a metal alkoxide, a metal alkylalkoxide, or a mixture thereof.
3 . A method in accordance with claim 1 wherein the metal oxide first device layer comprises zinc oxide, titanium oxide, or mixtures thereof.
4 . A method in accordance with claim 1 wherein the first device layer comprises a charge transport layer.
5 . A method in accordance with claim 1 wherein the method further comprises forming a second device layer before or after formation of the layer comprising quantum dots, such that the layer comprising quantum dots is disposed between the first and second device layers.
6 . A method in accordance with claim 1 wherein the first electrode is disposed on a substrate.
7 . A method in accordance with claim 1 wherein the device comprises a light-emitting device.
8 . A method in accordance with claim 1 , wherein the sol-gel composition is processed at a temperature less than about 200° C.
9 . A method in accordance with claim 1 the layer comprising quantum dots is deposited before formation of the first device layer.
10 . A method in accordance with claim 1 the layer comprising quantum dots is deposited after formation of the first device layer.
11 . A method in accordance with claim 1 wherein the sol-gel composition comprises a metal oxide precursor.
12 . A device prepared in accordance with the method of claim 1 .
13 . A device in accordance with claim 12 wherein the device comprises a light-emitting device.
14 . A device comprising a first device layer formed over a first electrode, the first device layer comprising a metal oxide formed by sol-gel processing that does not include acidic by-products, a second electrode over the first device layer, and a layer comprising quantum dots disposed between the first device layer and one of the two electrodes.
15 . A device in accordance with claim 14 wherein the metal oxide comprises zinc oxide, titanium oxide, or mixtures thereof.
16 . A device in accordance with claim 14 wherein the first device layer comprises a charge transport layer.
17 . A device in accordance with claim 14 wherein the device further includes a second device layer, wherein the layer comprising quantum dots is disposed between the first and second device layers.
18 . A device in accordance with claim 14 wherein the first electrode is disposed on a substrate.
19 . A device in accordance with claim 14 wherein the device comprises a light-emitting device.
20 . (canceled)