DEVICE INCLUDING QUANTUM DOTS
A method for making a device, the method comprising: depositing a layer comprising quantum dots over a first electrode, the quantum dots including ligands attached to the outer surfaces thereof; treating the surface of the deposited layer comprising quantum dots to remove the exposed ligands; and forming a device layer thereover. Also disclosed is a device made in accordance with the disclosed method. Another aspect of the invention relates to a device comprising a first electrode and a second electrode, and a layer comprising quantum dots between the two electrodes, the layer comprising quantum dots deposited from a dispersion that have been treated to remove exposed ligands after formation of the layer in the device. Another aspect of the invention relates to a device comprising a first electrode and a second electrode, a layer comprising a first inorganic semiconductor material disposed between the first and second electrodes, and a plurality of quantum dots disposed between the first and second electrodes, the outer surface of the quantum dots comprising a second inorganic semiconductor material, wherein the composition of the first inorganic semiconductor material and the second inorganic semiconductor material is the same (without regard to any ligands on the outer surface of the quantum dot).
1 - 16 . (canceled)
17 . A device comprising a first electrode and a second electrode, a layer comprising a first inorganic semiconductor material disposed between the first and second electrodes, and a plurality of quantum dots disposed between the first and second electrodes, the outer surface of the quantum dots comprising a second inorganic semiconductor material, wherein the composition of the first inorganic semiconductor material and the second inorganic semiconductor material is the same (without regard to any ligands on the outer surface of the quantum dot).
18 . A device in accordance with claim 17 wherein the quantum dots are distributed in the first inorganic semiconductor material.
19 . A device in accordance with claim 17 wherein the quantum dots are included in a separate layer disposed between the two electrodes.
20 . A device in accordance with claim 17 wherein the first layer comprises two layers, and the quantum dots can be disposed as a separate layer between the two layers of the first inorganic semiconductor material.
21 . A device in accordance with claim 19 wherein the quantum dots are deposited from a liquid dispersion in which they are dispersed, and the surface of the resulting quantum dot layer is treated to remove the exposed ligands before another device layer is formed thereof.
22 . A device in accordance with claim 20 wherein the quantum dots are deposited from a liquid dispersion in which they are dispersed, and the surface of the resulting quantum dot layer is treated to remove the exposed ligands before another device layer is formed thereof.
23 . A device in accordance with claim 21 wherein the exposed ligands are removed without treatment by heat or vacuum.
24 . A device in accordance with claim 22 wherein the exposed ligands are removed without treatment by heat or vacuum.
25 . A device in accordance with claim 21 wherein the exposed ligands are removed by oxygen plasma treatment.
26 . A device in accordance with claim 22 wherein the exposed ligands are removed by UV-ozone treatment.
27 . A device in accordance with claim 21 wherein the exposed ligands are removed by oxygen plasma treatment.
28 . A device in accordance with claim 22 wherein the exposed ligands are removed by UV-ozone treatment.
29 . A device in accordance with claim 17 wherein the first inorganic semiconductor material and the second inorganic semiconductor material comprise a II-VI inorganic semiconductor material.
30 . A device in accordance with claim 17 wherein the first inorganic semiconductor material and the second inorganic semiconductor material comprise a III-V inorganic semiconductor material.
31 . A device in accordance with claim 17 wherein the device is a light-emitting device and the quantum dots are electroluminescent.
32 - 34 . (canceled)
35 . A method for making a light-emitting device, the method comprising:
forming a first layer comprising an inorganic charge transport layer over a first electrode,
depositing an emissive layer comprising quantum dots over the first layer, the quantum dots including ligands attached to the outer surfaces thereof;
treating the surface of the deposited layer comprising quantum dots to remove the exposed ligands; and
forming a second device layer thereover, wherein forming the second device layer comprises evaporation of a layer comprising an inorganic semiconductor material.
36 . (canceled)
37 . A method in accordance with claim 35 wherein forming the second device layer comprises evaporation of a layer comprising a II-VI inorganic semiconductor material.
38 . A method in accordance with claim 35 wherein forming the second device layer comprises evaporation of a layer comprising a III-V inorganic semiconductor material.
39 . A method in accordance with claim 35 wherein forming the second device layer comprises evaporation of a layer comprising an organic semiconductor material.
40 . A method in accordance with claim 37 wherein the II-VI inorganic semiconductor material comprises an oxide compound.
41 . A method in accordance with claim 37 wherein the II-VI inorganic semiconductor material comprises sulfide compound.
42 . A method in accordance with claim 37 wherein the II-VI inorganic semiconductor material comprises selenide compound.
43 . (canceled)