Stabilizing laser energy density on a target during pulsed laser deposition of thin films
View Patent ↗A process for stabilizing laser energy density on a target surface during pulsed laser deposition of thin films controls the focused laser spot on the target. The process involves imaging an image-aperture positioned in the beamline. This eliminates changes in the beam dimensions of the laser. A continuously variable attenuator located in between the output of the laser and the imaged image-aperture adjusts the energy to a desired level by running the laser in a “constant voltage” mode. The process provides reproducibility and controllability for deposition of electronic thin films by pulsed laser deposition.
1. A process for stabilizing laser energy density on a target during pulsed laser deposition, comprising:
generating laser beam pulses of ultraviolet light from a laser; and thereafter
directing the laser beam pulses to an image-aperture that allows passage of a chosen central portion of the laser beam through the image-aperture while preventing passage of an outer portion of the laser beam through the image-aperture; and thereafter
directing the laser beam pulses from the image-aperture to a lens having a focal length, the lens producing a de-magnified image of the image-aperture on a target inside a deposition chamber according to an equation
1
f
=
1
s
i
+
1
s
o
,
wherein f is a value for the focal length of the lens, wherein s i is a value for a distance from the lens to the image of the laser beam on the target, and wherein s o is a value for a distance from the image-aperture to the lens; and thereafter
directing the laser beam pulses from the lens to the target in the deposition chamber, thereby stabilizing the laser energy density on the target, the laser beam pulses ablating material from the target; and thereafter
depositing a film onto the substrate from ablated material from the target.
2. The process of claim 1 , further comprising a step of controlling the laser beam prior to the step of directing the pulses to the image-aperture.
3. The process of claim 1 , wherein the laser comprises a gas discharge laser.
4. The process of claim 3 , wherein the gas discharge laser comprises an excimer laser.
5. The process of claim 4 , wherein the excimer laser is selected from an ArF laser, a KrF laser, or a XeCl laser.
6. The process of claim 1 , wherein the target comprises a metal oxide.
7. The process of claim 1 , wherein the target comprises a metal nitride.
8. The process of claim 1 , wherein the film comprises a metal oxide, a metal nitride, or a mixture thereof.
9. The process of claim 1 , wherein the films are high-temperature superconducting cuprates, ferroelectric metal oxides, ferromagnetic metal oxides, and multiferroic metal oxides.
10. A process for producing an oxide film on a substrate using laser pulses having a stabilized energy density, comprising:
generating laser beam pulses comprising a first laser of ultraviolet light from an excimer laser; and thereafter
directing the laser beam pulses to an image-aperture that allows passage of a chosen central portion of the laser beam pulses through the image-aperture while preventing passage of an outer portion of the laser beam pulses through the image-aperture; and thereafter
directing the laser beam pulses from the image-aperture to a lens having a focal length, the lens producing a de-magnified image of the image-aperture on a target inside a deposition chamber according to an equation
1
f
=
1
s
i
+
1
s
o
,
wherein f is a value for the focal length of the lens, wherein s i is a value for a distance from the lens to the image of the laser beam on the target, and wherein s o is a value for a distance from the image-aperture to the lens, the target comprising a metal oxide; and thereafter
directing the laser beam pulses from the lens to the target in the deposition chamber, thereby stabilizing the laser energy density on the target, the laser beam pulses ablating material from the target; and thereafter
depositing an oxide film onto the substrate from ablated material from the target.
11. The process of claim 10 , wherein the film comprises high-temperature superconducting cuprates, ferroelectric metal oxides, ferromagnetic metal oxides, and multiferroic metal oxides.