Light-emitting device

1. A light-emitting device comprising:

a first light-emitting structure comprising a first conductive type semiconductor layer, a first active layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the first active layer;

a second light-emitting structure on a top surface of the first light-emitting structure, the second light-emitting structure comprising a third conductive type semiconductor layer, a second active layer on the third conductive type semiconductor layer, and a fourth conductive type semiconductor layer on the second active layer;

an insulation layer inter-disposed between a top surface of the first light-emitting structure and a bottom surface of the second light-emitting structure; and

a first electrode contacted with the second conductive type semiconductor layer and the third conductive type semiconductor layer,

wherein the first electrode contacts the insulation layer,

wherein the first electrode has a thickness thicker than that of the insulating layer.

2. The light-emitting device of claim 1 , wherein the insulation layer includes a semiconductor material having a lower carrier concentration than that of the third conductive type semiconductor layer.

3. The light-emitting device of claim 1 , further comprising a second electrode on the first conductive type semiconductor layer and a third electrode on the fourth conductive type semiconductor layer.

4. The light-emitting device of claim 1 , wherein the first electrode is disposed on at least portions of top and side surfaces of the second conductive type semiconductor layer, a side surface of the insulation layer, and at least one portion of a side surface of the third conductive type semiconductor layer.

5. The light-emitting device of claim 1 , wherein a top surface of the first electrode is located at a higher position than that of a top surface of the insulating layer.

6. The light-emitting device of claim 1 , further comprising a conductive support member or a substrate disposed under a bottom surface of the first light-emitting structure.

7. The light-emitting device of claim 1 , wherein the insulating layer has the same width as the bottom surface of the second light-emitting structure.

8. The light-emitting device of claim 1 , wherein the first conductive type semiconductor layer and the third conductive type semiconductor layer comprise an N-type dopant, and the second conductive type semiconductor layer and the fourth conductive type semiconductor layer comprise a P-type dopant.

9. The light-emitting device of claim 1 , wherein the insulation layer has a thickness of about 10 nm to about 1,000 nm.

10. A light-emitting device comprising:

a first light-emitting structure comprising a first conductive type semiconductor layer, a first active layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the first active layer;

a second light-emitting structure on a top surface of the first light-emitting structure, the second light-emitting structure comprising a third conductive type semiconductor layer, a second active layer on the third conductive type semiconductor layer, and a fourth conductive type semiconductor layer on the second active layer;

an insulation layer between a top surface of the first light-emitting structure and a bottom surface of the second light-emitting structure; and

a first electrode commonly connected to the second conductive type semiconductor layer and the third conductive type semiconductor layer,

wherein the third conductive type semiconductor layer comprises an N-type dopant,

wherein the first electrode has a thickness thicker than that of the insulating layer,

wherein the first electrode is located at an outer position than a side surface of the third conductive type semiconductor layer, and

wherein the insulation layer is inter-disposed between a top surface of the second conductive type semiconductor layer and a bottom surface of the third conductive type semiconductor layer.

11. The light-emitting device of claim 10 , wherein the second conductive type semiconductor layer has a first upper surface and a second upper surface,

wherein the second upper surface of the second conductive type semiconductor layer is lower than a first upper surface of the second conductive type semiconductor layer.

12. The light-emitting device of claim 11 , wherein a bottom surface of the first electrode is located at a higher position than that the second upper surface of the second conductive type semiconductor layer.

13. The light-emitting device of claim 11 , wherein the insulation layer directly contacts the first upper surface of the second conductive type semiconductor layer.

14. The light-emitting device of claim 10 , further comprising a second electrode on the first conductive type semiconductor layer and a second electrode on the fourth conductive type semiconductor layer.

15. The light-emitting device of claim 10 , wherein the first conductive type semiconductor layer comprises an N-type dopant, and the second conductive type semiconductor layer and the fourth conductive type semiconductor layer comprise a P-type dopant.

16. The light-emitting device of claim 12 , wherein the first electrode is physically contacted with the side surface of the third conductive type semiconductor layer, a side surface of the insulating layer and the second upper surface of the second conductive type semiconductor layer.

17. A light-emitting device comprising:

a substrate;

a first light-emitting structure on the substrate, the first light-emitting structure comprising a first conductive type semiconductor layer, a first active layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the first active layer;

an insulation layer disposed on the second conductive type semiconductor layer;

a second light-emitting structure on the insulation layer, the second light-emitting structure comprising a third conductive type semiconductor layer on the insulation layer, a second active layer on the third conductive type semiconductor layer, and a fourth conductive type semiconductor layer on the second active layer;

a first electrode on the first conductive type semiconductor layer and a second electrode on the fourth conductive type semiconductor layer; and

a common electrode commonly and electrically connected to the second conductive type semiconductor layer and the third conductive type semiconductor layer,

wherein the common electrode is disposed between the second conductive type semiconductor layer and the insulation layer,

wherein the common electrode includes a plurality of protruding electrode parts, wherein the plurality of protruding electrode parts pass through the insulation layer to contact the third conductive type semiconductor layer of the second light-emitting structure,

wherein top surfaces of the protruding electrode parts have heights equal to or greater than that of the insulation layer, and

wherein the common electrode has an exposed edge region connected to a wire.

18. The light-emitting device of claim 17 , wherein the common electrode is disposed on an entire region of a top surface of the second conductive type semiconductor layer.

19. The light-emitting device of claim 17 , wherein the common electrode is formed of a material different from that of the protruding electrode parts.

20. The light-emitting device of claim 17 , wherein side and bottom surfaces of the protruding electrode parts contact the second conductive type semiconductor layer.