Variable resistance memory device and method of manufacturing the same

1. A method of manufacturing a variable resistance memory device, the method comprising:

forming a multi-layered insulating layer by alternately forming a first insulating layer and a second insulating layer on a semiconductor substrate, on which a lower electrode is formed;

forming a first hole exposing the lower electrode by etching the multi-layered insulating layer;

forming an oxide layer by oxidizing a portion of the second insulating layer;

removing the oxide layer so that the first insulating layer protrudes toward the inside of the first hole;

forming a spacer material, including a void, in the first hole;

forming a second hole, exposing the lower electrode, by removing a portion of the spacer material to a certain depth of the first hole;

forming a variable resistance material layer in the second hole; and

forming an upper electrode in a portion of the first hole from which the spacer material has been removed.

2. The method of claim 1 , wherein the first insulating layer and the second insulating layer are formed of materials having different etch selectivities from each other.

3. The method of claim 2 , wherein the first insulating layer includes a nitride, and the second insulating layer includes polysilicon.

4. The method of claim 2 , further comprising: between the forming an oxide layer and the forming a spacer material,

entirely removing the oxide layer; and

depositing an oxide material on an inner sidewall of the first hole.

5. The method of claim 2 , wherein the first insulating layer, which protrudes toward the inside of the first hole when a portion of the spacer material is removed, is removed in the forming of the second hole, and

the second hole is formed by the void.

6. The method of claim 5 , wherein the first insulating layer and the spacer material are formed of a same material.