Method of making an interconnect device
View Patent ↗A semiconductor system includes: providing a dielectric layer; providing a conductor in the dielectric layer, the conductor exposed at the top of the dielectric layer; capping the exposed conductor; and modifying the surface of the dielectric layer, modifying the surface of the dielectric layer, wherein modifying the surface includes cleaning conductor ions from the dielectric layer by dissolving the conductor in a low pH solution, dissolving the dielectric layer under the conductor ions, mechanically enhanced cleaning, or chemisorbing a hydrophobic layer on the dielectric layer.
1. A method of making an interconnect device, the method comprising:
providing a dielectric layer;
providing a conductor in the dielectric layer using chemical mechanical planarization, the conductor exposed at the top of the dielectric layer;
chemisorbing a hydrophobic layer selected from the group consisting of silanes containing at least one apolar group, cyclic azasilanes, and alkyl phosphates or phosphonates, on the dielectric layer;
capping the exposed conductor with a metallic cap material using an electroless deposition solution;
providing a cleaning solution comprising:
a corrosion inhibitor to inhibit corrosion of the metallic cap material;
an oxygen scavenger to prevent oxidation of the metallic cap material; and
a complexing agent also capable as a pH adjustor so that the solution has a pH less than 2; and
cleaning conductor ions from the dielectric layer by dissolving the conductor ions in the cleaning solution.
2. The method of claim 1 , wherein the corrosion inhibitor is a triazole compound.
3. The method of claim 1 , wherein the corrosion inhibitor comprises a toluol triazole or a benzotriazole.
4. The method of claim 1 , wherein the corrosion inhibitor is present at a concentration between 0.1 to 10000 ppm and all subranges subsumed therein.
5. The method of claim 1 , wherein the corrosion inhibitor is present at a concentration between 100 to 2000 ppm and all subranges subsumed therein.
6. The method of claim 1 , wherein the corrosion inhibitor comprises a triazole compound at a concentration between 0.1 to 10000 ppm and all subranges subsumed therein.
7. The method of claim 1 , wherein the corrosion inhibitor comprises a triazole compound at a concentration between 100 to 2000 ppm and all subranges subsumed therein.
8. The method of claim 1 , wherein the oxygen scavenger comprises L-ascorbic acid.
9. The method of claim 1 , wherein the corrosion inhibitor comprises a triazole compound and the oxygen scavenger comprises L-ascorbic acid.
10. The method of claim 1 , wherein the corrosion inhibitor comprises a toluol triazole or a benzotriazole and the oxygen scavenger comprises L-ascorbic acid.
11. The method of claim 1 , wherein the corrosion inhibitor comprises a triazole compound at a concentration between 0.1 to 10000 ppm and all subranges subsumed therein and the oxygen scavenger comprises L-ascorbic acid.
12. The method of claim 1 , wherein the corrosion inhibitor comprises a triazole compound at a concentration between 100 to 2000 ppm and all subranges subsumed therein and the oxygen scavenger comprises L-ascorbic acid.
13. The method of claim 1 , wherein the oxygen scavenger comprises L-ascorbic acid at a concentration between 0 to 10000 ppm and all subranges subsumed therein.
14. The method of claim 1 , wherein the oxygen scavenger comprises L-ascorbic acid at a concentration between 1000 to 5000 ppm and all subranges subsumed therein.
15. The method of claim 1 , wherein the complexing agent comprises oxalic acid.
16. The method of claim 1 , wherein the corrosion inhibitor comprises a triazole compound, the oxygen scavenger comprises L-ascorbic acid; and the complexing agent comprises oxalic acid.
17. The method of claim 1 , wherein the corrosion inhibitor comprises a toluol triazole or a benzotriazole; the oxygen scavenger comprises L-ascorbic acid; and the complexing agent comprises oxalic acid.
18. The method of claim 1 , wherein the corrosion inhibitor comprises a triazole compound at a concentration between 0.1 to 10000 ppm and all subranges subsumed therein; the oxygen scavenger comprises L-ascorbic acid; and the complexing agent comprises oxalic acid.
19. The method of claim 1 , wherein the corrosion inhibitor comprises a triazole compound at a concentration between 100 to 2000 ppm and all subranges subsumed therein; the oxygen scavenger comprises L-ascorbic acid; and the complexing agent comprises oxalic acid.
20. The method of claim 1 , wherein the oxygen scavenger comprises L-ascorbic acid at a concentration between 0 to 10000 ppm and all subranges subsumed therein; and the complexing agent comprises oxalic acid.
21. The method of claim 1 , wherein the oxygen scavenger comprises L-ascorbic acid at a concentration between 1000 to 5000 ppm and all subranges subsumed therein; and the complexing agent comprises oxalic acid.
22. The method of claim 1 , wherein the complexing agent comprises oxalic acid at a concentration between 2 to 50 g/L and all subranges subsumed therein.
23. The method of claim 1 , wherein:
the corrosion inhibitor comprises a triazole compound at a concentration between 0.1 to 10000 ppm and all subranges subsumed therein;
the oxygen scavenger comprises L-ascorbic acid at a concentration between 0 to 10000 ppm and all subranges subsumed therein; and
the complexing agent comprises oxalic acid at a concentration between 5 to 15 g/L and all subranges subsumed therein.
24. The method of claim 1 , wherein:
the corrosion inhibitor comprises a triazole compound at a concentration between 100 to 2000 ppm and all subranges subsumed therein;
the oxygen scavenger comprises L-ascorbic acid at a concentration between 1000 to 5000 ppm and all subranges subsumed therein; and
the complexing agent comprises oxalic acid at a concentration between 5 to 15 g/L and all subranges subsumed therein.
25. A method of making an interconnect device, the method comprising:
providing a dielectric layer;
providing a conductor comprising copper in the dielectric layer using chemical mechanical planarization, the conductor exposed at the top of the dielectric layer;
chemisorbing a hydrophobic layer selected from the group consisting of silanes containing at least one apolar group, cyclic azasilanes, and alkyl phosphates or phosphonates, on the dielectric layer;
capping the exposed conductor with a metallic cap material comprising cobalt (Co), cobalt tungsten phosphorous (CoWP), cobalt tungsten boron (CoWB), or cobalt tungsten phosphorous boron (CoWPB) deposited by electroless deposition;
providing a cleaning solution comprising:
a corrosion inhibitor, the corrosion inhibitor being a triazole compound at a concentration between 100 to 2000 ppm so as to inhibit corrosion of a capping layer;
an oxygen scavenger, the oxygen scavenger being L-ascorbic acid at a concentration between 1000 to 5000 ppm to remove oxygen so as to prevent oxidation of the capping layer; and
a complexing agent also capable as a pH adjustor so that the solution has a pH from 1.5 to 2.0, the complexing agent being oxalic acid at a concentration between 5 to 15 g/L; and
using the cleaning solution to clean Co, W, B, or P ions from the dielectric layer.