Dual-port semiconductor memory and first in first out (FIFO) memory having electrically floating body transistor
Multi-port semiconductor memory cells including a common floating body region configured to be charged to a level indicative of a memory state of the memory cell. The multi-port semiconductor memory cells include a plurality of gates and conductive regions interfacing with said floating body region. Arrays of memory cells and method of operating said memory arrays are disclosed for making a memory device.
1. A semiconductor memory cell comprising:
a plurality of bipolar devices;
a common base region of a first conductivity type configured to store a charge that is indicative of a memory state of said memory cell;
wherein adjacent ones of each of said bipolar devices are separated by a conductive region having a second conductivity type; and
wherein said base region is shared among said plurality of bipolar devices.
2. The semiconductor memory cell of claim 1 , wherein said common base region stores at least two stable charge levels.
3. The semiconductor memory cell of claim 1 , further comprising a plurality of gates.
4. The semiconductor memory cell of claim 3 , wherein each of the plurality of gates is configured to provide at least one of read access from and write access to the multi-port semiconductor memory cell independent of all others of the plurality of gates.
5. The semiconductor memory cell of claim 1 , wherein the semiconductor memory cell includes ports, wherein a total number of said ports is equal to a total number of said bipolar devices.
6. The semiconductor memory cell of claim 1 , wherein the semiconductor memory cell includes a fin structure, and further wherein the fin structure includes the common base region.
7. The semiconductor memory cell of 6 , wherein the fin structure further includes said conductive regions.
8. A semiconductor memory cell comprising:
a plurality of bipolar devices;
a common base region of a first conductivity type configured to store a charge that is indicative of a memory state of said memory cell;
wherein adjacent ones of each of said bipolar devices are separated by a conductive region having a second conductivity type; and
wherein a current flowing through each of said bipolar devices is a function of said charge stored in said common base region.
9. The semiconductor memory cell of claim 8 , wherein said common base region stores at least two stable charge levels.
10. The semiconductor memory cell of claim 8 , further comprising a plurality of gates.
11. The semiconductor memory cell of claim 10 , wherein each of the plurality of gates is configured to provide at least one of read access from and write access to the semiconductor memory cell independent of all others of the plurality of gates.
12. The semiconductor memory cell of claim 8 , wherein the semiconductor memory cell includes a fin structure, and further wherein the fin structure includes the common base region.
13. The semiconductor memory cell of claim 12 , wherein the fin structure further includes said conductive regions.
14. A multi-port semiconductor memory cell comprising:
a plurality of floating body transistors;
a common body region of a first conductivity type configured to store a charge that is indicative of a memory state of said memory cell; and
a plurality of conductive regions of a second conductivity type,
wherein adjacent ones of each of said plurality of floating body transistors are separated by a respective one of the plurality of conductive regions, and wherein the common body region extends continuously beneath at least one of the plurality of conductive regions.
15. The semiconductor memory cell of claim 14 , wherein said common body region stores at least two stable charge levels.
16. The semiconductor memory cell of claim 14 , further comprising a plurality of gates.
17. The semiconductor memory cell of claim 16 , wherein each of the plurality of gates is configured to provide at least one of read access from and write access to the semiconductor memory cell independent of the other of the plurality of gates.
18. The semiconductor memory cell of claim 14 , wherein the multi-port semiconductor memory cell includes ports, wherein a total number of said ports is equal to a total number of said floating body transistors.
19. The semiconductor memory cell of claim 14 , wherein the semiconductor memory cell includes a fin structure, and further wherein the fin structure includes the common body region.
20. The semiconductor memory cell of 19 , wherein the fin structure further includes the plurality of conductive regions.