IP Library Granted Patent US 9,076,987
Granted Patent B2
US 9,076,987 · App. 14/048,128 · Granted Jul 7, 2015

Organic light emitting diode display and manufacturing method thereof

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Quick Facts
Patent No.
US 9,076,987
App. No.
14/048,128
Granted
Jul 7, 2015
Kind
B2
Abstract

An organic light emitting diode display and a manufacturing method thereof are provided. The organic light emitting diode display includes a first substrate, a second substrate, a plurality of organic light emitting diodes, and a frit layer. The organic light emitting diodes are disposed on the first substrate, and the frit layer adheres the first substrate and the second substrate to each other. The frit layer includes a first porous region having pores, a second porous region having pores, and a third porous region having pores. The number of the pores of the first porous region with a diameter of larger than or equal to 4 μm and smaller than or equal to 15 μm is greater than the number of the pores of the second porous region with the above-mentioned diameter range.

Claims (37)

1. A display, comprising:

a first substrate having a displaying area;

a second substrate;

a plurality of organic light emitting diodes disposed between the first substrate and the second substrate;

a frit layer disposed between the first substrate and the second substrate and surrounding the organic light emitting diodes, wherein the frit layer comprises:

a first porous region having pores and a second porous region having pores, wherein the first porous region and the second porous region are disposed adjacent to each other, and the first porous region is disposed adjacent to the displaying area and located between the second porous region and the displaying area; and

an encapsulation layer disposed between the first substrate and the second substrate, wherein the encapsulation layer surrounds and covers the frit layer, and the frit layer is disposed between the organic light emitting diodes and the encapsulation layer;

wherein, the number of the pores of the first porous region with a diameter of larger than or equal to 4 μm and smaller than or equal to 15 μm is greater than the number of the pores of the second porous region with the diameter of larger than or equal to 4 μm and smaller than or equal to 15 μm; and

wherein a corner portion of the frit layer has a greater density of pores than a straight portion of the frit layer.

2. The display according to claim 1 , wherein the number of the pores of the second porous region with a diameter of larger than or equal to 0.2 μm and smaller than or equal to 4 μm is greater than the number of the pores of the first porous region with the diameter of larger than or equal to 0.2 μm and smaller than or equal to 4 μm.

3. The display according to claim 1 , wherein the frit layer further comprises a third porous region disposed on an outermost side of the frit layer, and the second porous region is located between the first porous region and the third porous region.

4. The display according to claim 3 , wherein the third porous region has pores, and the number of the pores of the third porous region with the diameter of larger than or equal to 4 μm and smaller than or equal to 15 μm is greater than the number of the pores of the second porous region with the diameter of larger than or equal to 4 μm and smaller than or equal to 15 μm.

5. The display according to claim 4 , wherein the number of the pores of the third porous region with the diameter of larger than or equal to 4 μm and smaller than or equal to 15 μm is greater than the number of the pores of the first porous region with the diameter of larger than or equal to 4 μm and smaller than or equal to 15 μm.

6. The display according to claim 1 , wherein along a cross-section of the frit layer, a ratio of the width of the second porous region to the width of the frit layer is between 10-90%.

7. The display according to claim 6 , wherein the ratio of the width of the second porous region to the width of the frit layer is between 25-35%.

8. The display according to claim 1 , further comprising a metal layer disposed between the frit layer and the second substrate.

9. The display according to claim 1 , wherein the frit layer comprises a silicon-containing material, and the first substrate and the second substrate are glass substrates.

10. The display according to claim 1 , wherein the organic light emitting diodes are disposed on the displaying area of the first substrate.

11. A manufacturing method of an organic light emitting diode display, comprising:

providing a first substrate and a second substrate, the first substrate having a displaying area;

forming a plurality of organic light emitting diodes on the displaying area of the first substrate and between the first substrate and the second substrate; and

forming a frit layer between the first substrate and the second substrate for adhering the second substrate and the first substrate to each other and surrounding the organic light emitting diodes, wherein the step of forming the frit layer comprises:

forming a first porous region having pores and a second porous region having pores, wherein the first porous region and the second porous region are disposed adjacent to each other, and the first porous region is disposed adjacent to the displaying area and located between the second porous region and the displaying area; and

forming an encapsulation layer between the first substrate and the second substrate, wherein the encapsulation layer surrounds and covers the frit layer, and the frit layer is disposed between the organic light emitting diodes and the encapsulation layer;

wherein, the number of the pores of the first porous region with a diameter of larger than or equal to 4 μm and smaller than or equal to 15 μm is greater than the number of the pores of the second porous region with the diameter of larger than or equal to 4 μm and smaller than or equal to 15 μm; and

wherein a corner portion of the frit layer has a greater density of pores than a straight portion of the frit layer.

12. The manufacturing method of the organic light emitting diode display according to claim 11 , wherein the number of the pores of the second porous region with a diameter of larger than or equal to 0.2 μm and smaller than or equal to 4 μm is greater than the number of the pores of the first porous region with the diameter of larger than or equal to 0.2 μm and smaller than or equal to 4 μm.

13. The manufacturing method of the organic light emitting diode display according to claim 11 , wherein the step of forming the frit layer further comprises: forming a third porous region on an outermost side of the frit layer, the second porous region is located between the first porous region and the third porous region, and the first porous region, the second porous region, and the third porous region are formed simultaneously.

14. The manufacturing method of the organic light emitting diode display according to claim 13 , wherein the number of the pores of the third porous region with the diameter of larger than or equal to 4 μm and smaller than or equal to 15 μm is greater than the number of the pores of the second porous region with the diameter of larger than or equal to 4 μm and smaller than or equal to 15 μm.

15. The manufacturing method of the organic light emitting diode display according to claim 11 , wherein the step of forming the frit layer comprises:

forming a frit material layer on the second substrate;

preheating the frit material layer;

assembling the first substrate and the second substrate; and

heating the frit material layer for forming the frit layer adhering the first substrate and the second substrate to each other.

16. The manufacturing method of the organic light emitting diode display according to claim 15 , wherein the frit material layer is preheated at a temperature of 460-500° C.

17. The manufacturing method of the organic light emitting diode display according to claim 15 , wherein the frit material layer is heated by a laser beam for forming the frit layer.

18. The manufacturing method of the organic light emitting diode display according to claim 17 , wherein the frit material layer is heated by the laser beam passing through a patterned mask for forming the first porous region and the second porous region of the frit layer.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 18, 2024
From: INNOLUX CORPORATION
To: RED OAK INNOVATIONS LIMITED
Reel/Frame 069206/0903 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 8, 2013
From: HUANG, HAO-JUNG; CHAO, KUANG-PIN; CHEN, YANG-CHEN
To: INNOLUX CORPORATION
Reel/Frame 031360/0769 →