III-V light emitting device with thin n-type region
View Patent ↗A device includes a semiconductor structure comprising a III-phosphide light emitting layer disposed between an n-type region and a p-type region. A transparent, conductive oxide is disposed in direct contact with the n-type region. In some embodiments, a total thickness of semiconductor material between the light emitting layer and the transparent, conductive oxide is less than one micron.
1. A device comprising:
a semiconductor structure comprising a III-phosphide light emitting layer disposed between an n-type region and a p-type region;
a transparent, conductive oxide disposed on the n-type region; and
a reflective p-contact disposed on the p-type region on a surface of the semiconductor structure opposite the transparent, conductive oxide.
2. The device of claim 1 wherein a total thickness of semiconductor material between the light emitting layer and the transparent, conductive oxide is no more than 1 micron.
3. The device of claim 1 wherein the transparent, conductive oxide comprises indium tin oxide.
4. The device of claim 1 further comprising a metal contact disposed on the transparent, conductive oxide.
5. The device of claim 1 wherein a majority of light extracted from the semiconductor structure is extracted through the transparent, conductive oxide.
6. The device of claim 1 further comprising an optical element bonded to the transparent, conductive oxide.
7. The device of claim 1 further comprising a luminescent ceramic bonded to the transparent, conductive oxide.
8. The device of claim 1 wherein the total thickness of semiconductor material between the light emitting layer and the transparent, conductive oxide is no more than 0.8 micron.