Zinc oxide precursor and method of depositing zinc oxide-based thin film using the same
View Patent ↗A zinc oxide (ZnO) precursor and a method of depositing a ZnO-based thin film using the same, with which a high-quality and high-purity ZnO-based thin film can be deposited. The ZnO precursor includes a mixture solvent containing at least two organic solvents which are mixed and a source material comprising diethyl zinc or dimethyl zinc which is diluted in the mixture solvent.
1. A method of depositing a zinc oxide-based thin film on a substrate by chemical vapor deposition, comprising depositing the zinc oxide-based thin film using a zinc oxide precursor and an oxidizer, the zinc oxide precursor comprising:
a mixture solvent comprising at least two organic solvents which are mixed; and
a zinc oxide precursor source material which is diluted in the mixture solvent,
wherein a ratio of the at least two organic solvents is set to be such that a vapor pressure of the mixture solvent is substantially identical to a vapor pressure of the zinc oxide precursor source material.
2. The method of claim 1 , wherein the organic solvents comprise paraffin-based hydrocarbon expressed by a formula C n H 2n+2 or cyclo-paraffin-based hydrocarbon expressed by a formula C n H 2n , where n is a number in a range from 5 to 12.
3. The method of claim 2 , wherein the organic solvents comprise octane and one of heptane, hexane and pentane.
4. The method of claim 1 , wherein the chemical vapor deposition comprises controlling the vapor pressure of the zinc oxide precursor source material to be in a range from 95 to 99% of the vapor pressure of the mixture solvent.
5. The method of claim 1 , wherein the chemical vapor deposition comprises atmospheric pressure chemical vapor deposition.
6. The method of claim 1 , wherein the chemical vapor deposition comprises vaporizing the zinc oxide precursor, and supplying a vaporized gas of the zinc oxide precursor into a deposition chamber in which the substrate is placed.
7. The method of claim 6 , vaporizing the zinc oxide precursor comprises blowing a gas into the zinc oxide precursor.
8. The method of claim 6 , wherein the zinc oxide precursor is carried by a carrier gas into the deposition chamber, the carrier gas comprising an inert gas.
9. The method of claim 1 , wherein the oxidizer comprises at least one selected from the group consisting of oxygen gas, ozone gas, nitrogen oxide gas, water vapor and alcohol vapor.
10. The method of claim 1 , wherein the chemical vapor deposition comprises doping the zinc oxide-based thin film with a dopant.
11. The method of claim 1 , wherein the substrate comprises one selected from the group consisting of a Si substrate, a sapphire substrate, a ceramic substrate, a glass substrate, a metal oxide substrate and a metal substrate.
12. The method of claim 1 , wherein the zinc oxide precursor source material comprises diethyl zinc or dimethyl zinc.
13. The method of claim 1 , wherein a content of the zinc oxide precursor source material ranges from 0.1 to 2 mol/L.