Light emitting device

1. A light-emitting device, comprising:

a light-emitting stack having a side wall and comprising an active layer which is configured to emit light;

a first electrode formed on the light-emitting stack and comprising an inner segment, an outer segment, and a plurality of extending segments electrically connecting the inner segment with the outer segment; and

a light-absorbing layer having a first portion surrounding the light-emitting stack in a top view and being configured to absorb the light toward the light-absorbing layer.

2. The light-emitting device of claim 1 , further comprising an insulation layer formed between the side wall and the light-absorbing layer.

3. The light-emitting device of claim 1 , wherein the light-emitting stack has a top surface having a first region, and the light-absorbing layer has a second portion covering the first region.

4. The light-emitting device of claim 3 , wherein the top surface has a second region, the outer segment is formed on the first region, and the inner segment is formed on the second region.

5. The light-emitting device of claim 1 , wherein the light-absorbing layer is formed on the outer segment.

6. The light-emitting device of claim 1 , further comprising an ohmic contact layer formed between the inner segment and the light-emitting stack.

7. The light-emitting device of claim 1 , wherein the inner segment or the outer segment comprises a circle, rectangle, quadrangle or polygon in shape.

8. The light-emitting device of claim 3 , wherein an area ratio of the first region to the top surface is between 10% and 90%.

9. The light-emitting device of claim 1 , further comprising a substrate and a reflective layer formed between the substrate and the light-emitting stack.

10. The light-emitting device of claim 4 , further comprising a reflective layer, wherein the reflective layer has an area substantially equal to that of the second portion.

11. The light-emitting device of claim 9 , further comprising a bonding layer formed between the reflective layer and the substrate.

12. The light-emitting device of claim 9 , further comprising a second electrode formed on the substrate.

13. The light-emitting device of claim 1 , wherein the light is in a wavelength range from 610 nm to 650 nm.

14. The light-emitting device of claim 1 , wherein the light-absorbing layer comprises Ti, Cr, Ni or a combination thereof.

15. The light-emitting device of claim 1 , wherein the light-absorbing layer comprises a plurality of sublayers.

16. A light-emitting device, comprising:

a light-emitting area comprising a first semiconductor structure, a second semiconductor structure surrounding the first semiconductor structure in a top view, and a trench formed between the first semiconductor structure and the second semiconductor structure; and

an electrode area substantially surrounding the light-emitting area and comprising a plurality of external electrode structures.

17. The light-emitting device of claim 16 , wherein one of the plurality of external electrode structures comprises a conductive layer and an insulation layer disposed between the second semiconductor structure and the conductive layer.

18. The light-emitting device of claim 17 , further comprising a first extension electrode disposed on the first semiconductor structure and a second extension electrode disposed on the second semiconductor structure, wherein the plurality of the external structures comprises a first bonding pad electrically connected to the first extension electrode, and a second bonding pad electrically connected to the second extension electrode.

19. The light-emitting device of claim 16 , wherein both of the first semiconductor structure and the second semiconductor structure are configured to emit light.

20. A light-emitting device, comprising:

a light-emitting area comprising

a first semiconductor structure,

a second semiconductor structure surrounding the first semiconductor structure and comprising an active layer and an electrode, and

an insulating layer connecting the electrode and the active layer; and

an electrode area substantially surrounding the light-emitting area and comprising a plurality of external electrode structures.