Method of producing semiconductor device, solid-state imaging device, method of producing electric apparatus, and electric apparatus
View Patent ↗There is provided a method of producing a semiconductor device. The method includes the steps of: forming a first hard mask having an opening above a substrate; forming a sacrificial film above a side surface of the opening of the first hard mask; forming a second hard mask in the opening having the sacrificial film above the side surface; removing the sacrificial film after the second hard mask is formed; ion implanting a first conductivity-type impurity through the first hard mask; and ion implanting a second conductivity-type impurity through the first and second hard masks.
1. A method of producing a semiconductor device, the method comprising:
a step of forming a first opening through a first electrically-insulative layer, said first electrically-insulative layer being on a semiconductor substrate during the step of forming the first opening;
a step of depositing a second electrically-insulative layer in said first opening, said second electrically-insulative layer being on said semiconductor substrate after the step of depositing the second electrically-insulative layer;
a step of implanting first ions through a second opening and into a compensation region of the semiconductor substrate, said second opening being a space between said first electrically-insulative layer and said second electrically-insulative layer; and
a step of removing said second electrically-insulative layer, said first electrically-insulative layer remaining on said semiconductor substrate after the step of removing the second electrically-insulative layer.
2. The method according to claim 1 , the method further comprising:
a step of depositing a sacrificial film on a sidewall of the first opening prior to the step of depositing the second electrically-insulative layer, said second electrically-insulative layer touching said sacrificial film after the step of depositing the second electrically-insulative layer.
3. The method according to claim 1 , further comprising:
a step of implanting second ions through said first opening and into an impurity region of the semiconductor substrate after the step of removing the second electrically-insulative layer.
4. The method according to claim 3 , wherein a stopper layer is between said first electrically-insulative layer and said semiconductor substrate.
5. The method according to claim 4 , wherein said stopper layer is an electrical insulator.
6. The method according to claim 4 , wherein said stopper layer is a silicon nitride.
7. The method according to claim 4 , wherein said stopper layer is a P—SiN.
8. The method according to claim 4 , wherein said stopper layer touches said first electrically-insulative layer and said semiconductor substrate.
9. The method according to claim 4 , wherein said stopper layer is between said second electrically-insulative layer and said semiconductor substrate, said stopper layer touching said second electrically-insulative layer and said semiconductor substrate.
10. The method according to claim 4 , wherein said first ions are implanted through said stopper layer.
11. The method according to claim 4 , wherein said second ions are implanted through said stopper layer.
12. The method according to claim 4 , wherein said first opening terminates at said stopper layer.
13. The method according to claim 3 , wherein said impurity region is in alignment with said first opening, said compensation region overlapping said impurity region.
14. The method according to claim 3 , wherein a conductivity of the compensation region is opposite to a conductivity of the impurity region.
15. The method according to claim 3 , wherein an impurity-type of the second ions differs from an impurity-type of the first ions.
16. The method according to claim 3 , wherein said second ions are of a P-type impurity.
17. The method according to claim 1 , wherein said first ions are of an N-type impurity.
18. The method according to claim 1 , wherein said first electrically-insulative layer differs from said second electrically-insulative layer.
19. The method according to claim 1 , wherein said first electrically-insulative layer is a silicon oxide.
20. A method of producing a semiconductor device, the method comprising:
a step of forming a first opening through a first electrically-insulative layer, said first electrically-insulative layer being on a semiconductor substrate during the step of forming the first opening;
a step of depositing a second electrically-insulative layer in said first opening, said second electrically-insulative layer being on said semiconductor substrate after the step of depositing the second electrically-insulative layer;
a step of implanting first ions through a second opening and into a compensation region of the semiconductor substrate, said second opening being a space between said first electrically-insulative layer and said second electrically-insulative layer;
a step of depositing a sacrificial film on a sidewall of the first opening prior to the step of depositing the second electrically-insulative layer, said second electrically-insulative layer touching said sacrificial film after the step of depositing the second electrically-insulative layer; and
a step of removing said sacrificial film to form said second opening, said sacrificial film being removed prior to the step of implanting the first ions.