Light emitting device
A light emitting device package, and a lighting system includes a light emitting device. The light emitting device includes a substrate, a first conductive semiconductor layer on the substrate, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer. A first via electrode contacts the first conductive semiconductor layer through a via hole formed through the substrate, and a second via electrode contacts the second conductive semiconductor layer through a second via hole formed through the substrate, the first conductive semiconductor layer, and the active layer.
1. A light emitting device comprising:
a substrate;
a first conductive semiconductor layer disposed on the substrate;
an active layer disposed on the first conductive semiconductor layer;
a second conductive semiconductor layer disposed on the active layer;
a first via electrode contacting the first conductive semiconductor layer through a via hole penetrating the substrate;
a second via electrode contacting the second conductive semiconductor layer through a second via hole penetrating the substrate, the first conductive semiconductor layer, and the active layer;
a first extending electrode extending from the first via electrode while contacting a top surface of the first via electrode;
a second extending electrode extending from the second via electrode while contacting a top surface of the second via electrode;
a first electrode under a bottom portion of the first via electrode; and
a second electrode under a bottom portion of the second via electrode, wherein the first extending electrode includes a metal material, and
wherein a lateral width of the first extending electrode is greater than a lateral width of the first electrode,
wherein the first extending electrode is disposed in the first conductive semiconductor layer,
wherein a top surface of the first extending electrode is not exposed,
wherein a lateral width of the second extending electrode is greater than a lateral width of the second electrode,
wherein the second extending electrode is disposed in the second conductive semiconductor layer,
wherein a top surface of the second extending electrode is not exposed through an upper surface of the second conductive semiconductor layer,
wherein the second extending electrode is vertically overlapped with the first extending electrode,
wherein the top surface of the second extending electrode is lower than the upper surface of the second conductive semiconductor layer, and
wherein the second extending electrode is not in contact with the upper surface of the second conductive semiconductor layer, and the second extending electrode is not in contact with a lower surface of the second conductive semiconductor layer.
2. The light emitting device of claim 1 , further comprising a first insulating layer surrounding a lateral side of the first via electrode.
3. The light emitting device of claim 1 , wherein the first via electrode comprises a nitride transition metal.
4. The light emitting device of claim 3 , wherein the first via electrode comprises at least one of CrN, TiN, or CrAlN.
5. The light emitting device of claim 3 , wherein the first via electrode comprises a nitride transition metal representing a melting point of 1500° C. or more.
6. The light emitting device of claim 3 , wherein the first via electrode comprises a nitride transition metal representing at least 70% of an optical transmittance rate.
7. The light emitting device of claim 3 , wherein the first via electrode comprises a nitride transition metal representing electric resistance of 70 μΩ·cm or less.
8. The light emitting device of claim 1 , further comprising a second insulating layer surrounding a lateral side of the second via electrode.
9. The light emitting device of claim 1 , wherein the second via electrode comprises a nitride transition metal.
10. The light emitting device of claim 9 , wherein the second via electrode comprises at least one of CrN, TiN, or CrAlN.
11. The light emitting device of claim 9 , wherein the second via electrode comprises a nitride transition metal representing a melting point of 1500° C. or more.
12. The light emitting device of claim 9 , wherein the second via electrode comprises a nitride transition metal representing at least 70% of an optical transmittance rate.
13. The light emitting device of claim 9 , wherein the second via electrode comprises a nitride transition metal representing electric resistance of 70 μΩ·cm or less.
14. The light emitting device of claim 1 , wherein the second extending electrode extends in one lateral direction of the second via electrode.
15. The light emitting device of claim 1 , wherein the second extending electrode extends in both lateral directions of the second via electrode.
16. The light emitting device of claim 1 , wherein a maximum width of the first extending electrode is less than a maximum width of the substrate.
17. The light emitting device of claim 1 , wherein the first extending electrode is vertically overlapped with the second extending electrode.
18. A light emitting device comprising:
a substrate;
a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer disposed on the substrate;
a first via electrode contacting a bottom surface of the first conductive semiconductor layer through a via hole penetrating the substrate from a bottom surface of the substrate;
a second via electrode contacting a bottom surface of the second conductive semiconductor layer through a second via hole penetrating the substrate, the first conductive semiconductor layer, and the active layer from the bottom surface of the substrate;
a first extending electrode extending from the first via electrode while contacting a top surface of the first via electrode;
a second extending electrode extending from the second via electrode while contacting a top surface of the second via electrode;
a first electrode under a bottom portion of the first via electrode; and
a second electrode under a bottom portion of the second via electrode, wherein the first extending electrode includes a metal material, and
wherein a lateral width of the first extending electrode is greater than a lateral width of the first electrode,
wherein the first extending electrode is disposed in the first conductive semiconductor layer, and
wherein a top surface of the first extending electrode is not exposed,
wherein a lateral width of the second extending electrode is greater than a lateral width of the second electrode,
wherein the second extending electrode is disposed in the second conductive semiconductor layer,
wherein a top surface of the second extending electrode is not exposed through an upper surface of the second conductive semiconductor layer,
wherein the second extending electrode is vertically overlapped with the first extending electrode,
wherein the top surface of the second extending electrode is lower than the upper surface of the second conductive semiconductor layer, and
wherein the second extending electrode is not in contact with the upper surface of the second conductive semiconductor layer, and the second extending electrode is not in contact with a lower surface of the second conductive semiconductor layer.
19. The light emitting device of claim 18 ,
wherein the second extending electrode extends in one lateral direction of the second via electrode.
20. The light emitting device of claim 18 , wherein the second extending electrode extends in both lateral directions of the second via electrode,
wherein a maximum width of the second extending electrode is less than a maximum width of the substrate.