Plasma torch power circuit and cooling system
View Patent ↗A plasma arc cutting system includes a power supply comprising a multi-pulse transformer and a plurality of semiconductor switches directly connected to a bank of capacitors, and a thermal regulation system connected to the power supply and configured to cool the multi-pulse transformer. The thermal regulation system includes a cold plate in direct contact with the semiconductor switches; a fluid conduit disposed within the cold plate; and a pump connected to the conduit and configured to direct a coolant fluid through the conduit. The power supply has at least one of the following operating requirements: (i) a weight to power ratio of approximately 22.4 pounds per kilowatt; (ii) a volume to power ratio of approximately 1366 cubic inches per kilowatt; (iii) an average semiconductor device case temperature of approximately 100 degrees Centigrade during a cutting operation; (iv) a maximum transformer temperature of about 133 degrees Centigrade during a cutting operation.
1. A plasma arc cutting system comprising:
a power supply configured to support generation of a plasma arc, the power supply including a multi-pulse transformer and a plurality of semiconductor switches directly connected to a bank of capacitors; and
a thermal regulation system connected to the power supply and configured to cool the multi-pulse transformer, the thermal regulation system further comprising:
a cold plate in contact with the semiconductor switches;
a fluid conduit disposed within the cold plate; and
a pump connected to the conduit and configured to direct a coolant fluid through the conduit,
wherein the power supply has at least one of the following operating requirements:
(i) a weight to power ratio of 22.4 pounds per kilowatt;
(ii) a volume to power ratio of 1366 cubic inches per kilowatt;
(iii) an average chopper semiconductor device case temperature of 100 degrees Centigrade during a cutting operation;
(iv) a maximum transformer temperature of about 133 degrees Centigrade during a cutting operation.
2. The plasma arc cutting system of claim 1 wherein the power supply has at least two of the operating requirements.
3. The plasma arc cutting system of claim 1 wherein the power supply further comprises a plurality of inductors, each inductor connected in series to a distinct semiconductor switch.
4. The plasma arc cutting system of claim 3 wherein each semiconductor switch comprises an insulated gate bipolar transistor.
5. The plasma arc cutting system of claim 3 wherein each inductor is connected to a common coil.
6. The plasma arc cutting system of claim 3 wherein each inductor is mounted on a common magnetic core.
7. The plasma arc cutting system of claim 3 wherein the thermal regulation system further comprises a set of fans connected to the power supply and a set of baffles connected to the power supply, the fans and baffles oriented to cool at least one of the transformer and the inductors.
8. The plasma arc cutting system of claim 1 wherein the transformer is directly connected to a plurality of rectifiers, the rectifiers connected to each other in series.
9. The plasma arc cutting system of claim 8 wherein each rectifier includes a three-phase diode bridge.
10. The plasma arc cutting system of claim 1 wherein the bank of capacitors comprises four direct current bus capacitors.
11. The plasma arc cutting system of claim 1 wherein the transformer is a 12-pulse transformer.
12. A plasma cutting system comprising:
means for providing power to a plasma cutting torch using at least two interleaved choppers, each of the interleaved choppers connected to a distinct inductor; and
means for liquid cooling of the interleaved choppers,
wherein the means for providing power is characterized by at least one of the following:
(i) a weight to power ratio of 22.4 pounds per kilowatt;
(ii) a volume to power ratio of 1366 cubic inches per kilowatt;
(iii) an average chopper semiconductor device case temperature of 100 degrees Centigrade during operation;
(iv) a maximum transformer temperature of about 133 degrees Centigrade during a cutting operation.
13. The plasma cutting system of claim 12 wherein the means for providing power is characterized by at least two of the following:
(i) a weight to power ratio of 22.4 pounds per kilowatt;
(ii) a volume to power ratio of 1366 cubic inches per kilowatt;
(iii) an average chopper semiconductor device case temperature of 100 degrees Centigrade during a cutting operation;
(iv) a maximum transformer temperature of about 133 degrees Centigrade during a cutting operation.