Method for producing silicon-ingots
View Patent ↗Method for producing silicon-ingots ( 1 ) comprising the following steps: Providing a silicon melt ( 3 ), growing a block ( 2 ) of silicon from said silicon melt ( 3 ), said block ( 2 ) having a predetermined crystal orientation, cutting said block ( 2 ) along at least one cutting plane ( 16, 17, 18 ) into a number of silicon-ingots ( 1 ).
1. A method for producing silicon-ingots comprising the following steps:
providing a silicon melt;
growing a block of silicon from said silicon melt, said block having a predetermined crystal orientation; and
cutting said block along at least one cutting plane into a number of silicon-ingots, wherein for the growing of said block of silicon a crucible-less process is used, wherein said block is cut, such that said silicon-ingots have a longitudinal direction which is perpendicular to a growth direction of said block.
2. Method according to claim 1 , wherein for the growing of said block of silicon the growth direction is chosen to be parallel to one of the following directions: <100>, <110> and <111>.
3. Method according to claim 1 , wherein for the growing of said block of silicon a seed assembly comprising at least one seed is used.
4. Method according to claim 1 , wherein said at least one seed is made from monocrystalline silicon.
5. Method according to claim 1 , wherein said block has a length in the growth-direction of at least 313 mm.
6. Method according to claim 1 , wherein said block has a rectangular cross section.
7. Method according to claim 5 , wherein said block has a crystal-structure and side faces the normal of which are oriented parallel to one of the following directions: <100>, <110> and <111>.
8. Method according to claim 1 , wherein said silicon-ingots have a square cross-section.
9. Method according to claim 1 , wherein said block is cut into a matrix of silicon-ingots, wherein each side of the matrix corresponds to at least two silicon-ingots.
10. A method for producing silicon-ingots comprising the following steps:
providing a silicon melt;
growing a block of silicon from said silicon melt via a crucible-less process, said block comprising a predetermined crystal orientation; and
dividing said block along at least one cutting plane into a number of silicon-ingots such that said silicon-ingots have a longitudinal direction perpendicular to a growth direction of said block.
11. Method according to claim 10 , wherein for the growing of said block of silicon the growth direction is chosen to be parallel to one of the following directions: <100>, <110> and <111>.
12. Method according to claim 10 , wherein said block has a length in the growth-direction of at least 313 mm.
13. Method according to claim 10 , wherein said silicon-ingots have a square cross-section.
14. Method according to claim 10 , wherein said block is cut into a matrix of silicon-ingots, wherein each side of the matrix corresponds to at least two silicon-ingots.
15. Method according to claim 12 , wherein said block has a crystal-structure and side faces the normal of which are oriented parallel to one of the following directions: <100>, <110> and <111>.
16. A method for producing silicon-ingots comprising the following steps:
providing a silicon melt;
forming a block of silicon from said silicon melt via a process without using a crucible, said block having a predetermined crystal orientation; and
cutting said block along at least one cutting plane into a number of silicon-ingots such that said silicon-ingots have a longitudinal direction that is perpendicular to a growth direction of said block.
17. Method according to claim 16 , wherein for the growing of said block of silicon the growth direction is chosen to be parallel to one of the following directions: <100>, <110> and <111>.
18. Method according to claim 16 , wherein said block has a length in the growth-direction of at least 313 mm, wherein said block has a crystal-structure and side faces the normal of which are oriented parallel to one of the following directions: <100>, <110> and <111>.
19. Method according to claim 16 , wherein said silicon-ingots have a square cross-section.
20. Method according to claim 16 , wherein said block is cut into a matrix of silicon-ingots, wherein each side of the matrix corresponds to at least two silicon-ingots.