Semiconductor device
View Patent ↗Provided is a semiconductor device having high ESD tolerance. A first via ( 16 ) is used for electrically connecting a pad ( 22 ) to a drain of an NMOS transistor of an ESD protective circuit. The first vias ( 16 ) are formed under the pad ( 22 ) only on one side of a rectangular ring-shaped intermediate metal film ( 17 ) and on another side thereof opposed to the one side. In other words, all the first vias ( 16 ) for establishing an electrical connection to the drains are present substantially directly under the pad ( 22 ). Consequently, a surge current caused by ESD and applied to the pad ( 22 ) is more likely to flow uniformly among all the drains. Then, respective channels of the NMOS transistor of the ESD protective circuit are more likely to uniformly operate, and hence the ESD tolerance of the semiconductor device is increased.
1. A semiconductor device, comprising:
an NMOS transistor formed under a pad,
the NMOS transistor comprising:
a diffusion region for a source and a diffusion region for a drain, each alternately arranged;
a gate electrode disposed above each channel between the source and the drain; and
a P-type diffusion region for fixing a substrate potential, the P-type diffusion region surrounding the diffusion region for the source, the diffusion region for the drain, and the gate electrode,
the NMOS transistor having an even number of the channels;
a first lower metal film formed on the drain, for establishing an electrical connection to the drain;
a second lower metal film for electrically connecting the source and the gate electrode to the P-type diffusion region;
an intermediate metal film electrically connected to the first lower metal film through a first via, the intermediate metal film having a rectangular ring shape and including an opening under the pad;
an upper metal film that forms the pad, the upper metal film being formed on the intermediate metal film and electrically connected to the intermediate metal film through a second via; and
a protective film including a pad opening that is aligned with the opening,
the first vias being formed only on one side of the intermediate metal film and on another side thereof opposed to the one side,
the diffusion region for the source and the diffusion region for the drain being formed symmetrically about a straight line in a channel width direction of the NMOS transistor.
2. A semiconductor device according to claim 1 , wherein the NMOS transistor comprises the diffusion regions for the source as diffusion regions at both ends in a gate length direction.
3. A semiconductor device according to claim 1 , wherein the NMOS transistor comprises the diffusion regions for the drain as diffusion regions at both ends in a gate length direction.
4. A semiconductor device according to claim 2 , wherein the NMOS transistor further comprises a P-type diffusion region for fixing the substrate potential, the P-type diffusion region being located at a center of the NMOS transistor and sandwiched on both sides by the diffusion regions for the source.