CMOS device with double-sided terminals and method of making the same

1. A method for manufacturing an integrated circuit device, the method comprising:

providing a semiconductor substrate having a first surface and a second surface opposite the first surface;

forming an etch stop layer within the semiconductor substrate at a first depth from the first surface;

forming a shallow trench isolation in the semiconductor substrate having a second depth from the first surface, the second depth being less than or equal to the first depth;

forming a gate insulating layer on the first surface of the semiconductor substrate, a gate electrode on the gate insulating layer and gate sidewalls on side surfaces of the gate electrode;

forming a source region and a drain region in the semiconductor substrate, the source region comprising a first portion adjacent to the gate insulating layer and a second portion extending toward the second surface, and the drain region comprising a first portion adjacent to the gate insulating layer and a second portion extending toward the second surface;

concurrently forming a source connection terminal on the second surface configured to connect with the source region, a drain connection terminal on the second surface configured to connect with the drain region, and a body terminal on the second surface of the semiconductor substrate between the source connection terminal and the drain connection terminal and directly connected to the semiconductor substrate;

forming an interlayer dielectric layer overlying the source and drain connection terminals and the body terminal; and

concurrently forming contact openings through the interlayer dielectric layer directly on the source and drain connection terminals and directly on the body terminal,

wherein forming the source and drain comprises:

performing a first ion implantation into the first surface of the semiconductor substrate to form the first portion of the source region and the first portion of the drain region; and

performing a second ion implantation into the second surface of the semiconductor substrate to form the second portion of the source region and the second portion of the drain region.

2. The method of claim 1 , further comprising:

forming a gate terminal on the gate electrode.

3. The method of claim 1 ,

further comprising, after performing the second ion implantation:

annealing the ion implanted semiconductor substrate to diffuse implanted ions in the second portions into the first portions.

4. The method of claim 1 , further comprising:

bonding a bearer substrate to the first surface of the semiconductor substrate;

submitting the second surface of the semiconductor substrate to a thinning treatment to remove a portion of the semiconductor substrate to expose a surface of the etch stop layer.

5. The method of claim 1 , further comprising:

forming the etch stop layer parallel to the first surface of the semiconductor substrate prior to forming the shallow trench isolation;

thinning the semiconductor substrate from the second surface until the stop layer is exposed.

6. The method of claim 1 , further comprising:

forming a first dielectric layer on the second surface of the semiconductor substrate, the first dielectric layer having a first portion disposed on the second surface and a second portion disposed in the semiconductor substrate.

7. The method of claim 6 , further comprising:

forming a through silicon via through the interlayer dielectric layer and the first dielectric layer.

8. The method of claim 4 , further comprising:

removing the bearer substrate.

9. The method of claim 1 , wherein forming the etch stop layer comprises:

injecting oxygen into the semiconductor substrate to the first depth to obtain an oxygen ion layer; and

heating the oxygen ion layer.