IP Library › Granted Patent US 9,466,430
Granted Patent B2
US 9,466,430 · App. 14/071,025 · Granted Oct 11, 2016

Variable capacitor and switch structures in single crystal piezoelectric MEMS devices using bimorphs

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Quick Facts
Patent No.
US 9,466,430
App. No.
14/071,025
Granted
Oct 11, 2016
Kind
B2
Abstract

A micro-electrical-mechanical systems (MEMS) device includes a substrate, one or more anchors formed on a first surface of the substrate, and a piezoelectric layer suspended over the first surface of the substrate by the one or more anchors. A first electrode may be provided on a first surface of the piezoelectric layer facing the first surface of the substrate, such that the first electrode is in contact with a first bimorph layer of the piezoelectric layer. A second electrode may be provided on a second surface of the piezoelectric layer opposite the first surface, such that the second electrode is in contact with a second bimorph layer of the piezoelectric layer.

Claims (46)

1. A micro-electrical-mechanical system (MEMS) device comprising:

a substrate;

one or more anchors formed on a first surface of the substrate;

a piezoelectric layer suspended over the first surface of the substrate by the one or more anchors, wherein the piezoelectric layer is a piezoelectric bimorph;

a first electrode on a first surface of the piezoelectric layer facing the first surface of the substrate; and

a second electrode on a second surface of the piezoelectric layer opposite the first surface.

2. The MEMS device of claim 1 wherein a DC voltage is applied between the first electrode and the second electrode in order to vary a capacitance between the first electrode and the second electrode.

3. The MEMS device of claim 1 wherein the piezoelectric bimorph comprises a first bimorph layer and a second bimorph layer.

4. The MEMS device of claim 3 wherein the first electrode is in contact with the first bimorph layer and the second electrode is in contact with the second bimorph layer.

5. The MEMS device of claim 4 wherein a DC voltage is applied between the first electrode and the second electrode in order to vary a capacitance between the first electrode and the second electrode.

6. The MEMS device of claim 3 wherein the first bimorph layer and the second bimorph layer comprise a single crystal piezoelectric material having a uniform crystalline orientation.

7. The MEMS device of claim 6 wherein the uniform crystalline orientation of the first bimorph layer is defined by a first set of Euler angles, and the uniform crystalline orientation of the second bimorph layer is defined by a second set of Euler angles.

8. The MEMS device of claim 7 wherein the first set of Euler angles is different from the second set of Euler angles.

9. A micro-electrical-mechanical system (MEMS) device comprising:

a substrate;

one or more anchors formed on a first surface of the substrate;

a piezoelectric layer suspended over the first surface of the substrate by the one or more anchors, wherein the piezoelectric layer is a piezoelectric bimorph;

a first electrode on a first surface of the piezoelectric layer facing the first surface of the substrate;

a second electrode on a second surface of the piezoelectric layer opposite the first surface; and

a third electrode on the first surface of the substrate below the first electrode.

10. The MEMS device of claim 9 wherein a DC voltage is applied between the first electrode and the second electrode in order to vary a capacitance between the first electrode and the third electrode.

11. The MEMS device of claim 10 wherein a DC voltage is applied between the first electrode and the second electrode in order to selectively place the first electrode in contact with the third electrode.

12. The MEMS device of claim 9 wherein the piezoelectric bimorph comprises a first bimorph layer and a second bimorph layer.

13. The MEMS device of claim 12 wherein the first electrode is in contact with the first bimorph layer and the second electrode is in contact with the second bimorph layer.

14. The MEMS device of claim 13 wherein a DC voltage is applied between the first electrode and the second electrode in order to vary a capacitance between the first electrode and the third electrode.

15. The MEMS device of claim 13 wherein a DC voltage is applied between the first electrode and the second electrode in order to selectively place the first electrode in contact with the third electrode.

16. The MEMS device of claim 12 wherein the first bimorph layer and the second bimorph layer comprise a single crystal piezoelectric material having a uniform crystalline orientation.

17. The MEMS device of claim 16 wherein the uniform crystalline orientation of the first bimorph layer is defined by a first set of Euler angles, and the uniform crystalline orientation of the second bimorph layer is defined by a second set of Euler angles.

18. The MEMS device of claim 17 wherein the first set of Euler angles is different from the second set of Euler angles.

19. A micro-electrical-mechanical system (MEMS) device comprising:

a substrate;

one or more anchors formed on a first surface of the substrate, each of the one or more anchors comprising at least one piezoelectric anchor layer, wherein the at least one piezoelectric anchor layer is a piezoelectric bimorph;

a piezoelectric layer suspended over the first surface of the substrate by the one or more anchors;

a first electrode on a first surface of the piezoelectric layer facing the first surface of the substrate;

a second electrode on a second surface of the piezoelectric layer opposite the first surface; and

a third electrode on the first surface of the substrate below the first electrode.

20. The MEMS device of claim 19 wherein a DC voltage is applied between the first electrode and the second electrode in order to vary a capacitance between the first electrode and the third electrode.

21. The MEMS device of claim 19 wherein a DC voltage is applied between the first electrode and the second electrode in order to selectively place the first electrode in contact with the third electrode.

22. The MEMS device of claim 19 wherein the piezoelectric anchor layer comprises a first bimorph layer and a second bimorph layer.

23. The MEMS device of claim 22 wherein the first electrode is in contact with the first bimorph layer and the second electrode is in contact with the second bimorph layer.

24. The MEMS device of claim 23 wherein a DC voltage is applied between the first electrode and the second electrode in order to vary a capacitance between the first electrode and the third electrode.

25. The MEMS device of claim 23 wherein a DC voltage is applied between the first electrode and the second electrode in order to selectively place the first electrode in contact with the third electrode.

26. The MEMS device of claim 22 wherein the first bimorph layer and the second bimorph layer comprise a single crystal piezoelectric material having a uniform crystalline orientation.

27. The MEMS device of claim 26 wherein the uniform crystalline orientation of the first bimorph layer is defined by a first set of Euler angles, and the uniform crystalline orientation of the second bimorph layer is defined by a second set of Euler angles.

28. The MEMS device of claim 27 wherein the first set of Euler angles is different from the second set of Euler angles.

29. The MEMS device of claim 19 wherein the piezoelectric layer is a piezoelectric bimorph.

Assignments (2)
MERGER Recorded Jun 16, 2016
From: RF MICRO DEVICES, INC.
To: QORVO US, INC.
Reel/Frame 039196/0941 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 4, 2013
From: BHATTACHARJEE, KUSHAL
To: RF MICRO DEVICES, INC.
Reel/Frame 031538/0398 →