Solar cell and fabricating method thereof

1. A fabricating method of a solar cell, the method comprising:

forming a second conductive-type semiconductor layer by doping a front surface of a first conductivity-type semiconductor substrate with a second conductivity-type impurity having a conductivity opposite to that of the first conductivity-type semiconductor substrate;

forming an anti-reflection film on a front surface of the second conductive-type semiconductor layer formed on the front surface of the first conductive-type semiconductor layer;

forming at least one opening exposing a part of the front surface of the second conductive-type semiconductor layer by etching the anti-reflection film;

forming at least one front electrode contacting the part of the front surface of the second conductivity-type semiconductor layer exposed through the at least one opening formed at the anti-reflection film on the front surface of the second conductive-type semiconductor layer; and

forming at least one rear electrode formed on a rear surface of the first conductivity-type semiconductor substrate,

wherein the forming of the at least one front electrode is achieved by applying an electrode paste in the at least one opening using a screen printing method or a direct printing method and performing heat treatment, and the electrode paste includes a metal containing silver (Ag) or a metal alloy containing silver (Ag), lead-free glass frit, and a resin binding agent dispersed in an organic medium.

2. The fabricating method according to claim 1 , wherein the at least one opening is formed by patterning an etching paste on the anti-reflection film using the screen printing method or the direct printing method and then etching the anti-reflection film using the etching paste.

3. The fabricating method according to claim 1 , wherein the at least one opening is formed by patterning a mask layer on the anti-reflection film, etching the anti- reflection film in regions of which the mask layer is not formed, and then removing the mask layer.

4. The fabricating method according to claim 3 , wherein the mask layer is formed by patterning an etching prevention paste on the anti-reflection film using the screen printing method or the direct printing method.

5. The fabricating method according to claim 1 , wherein a temperature for performing the heat treatment is about 500˜850° C.

6. The fabricating method according to claim 1 , further comprising forming prominences and depressions on the front surface or the front and rear surfaces of the first conductivity-type semiconductor substrate by texturing the first conductivity-type semiconductor substrate.

7. The fabricating method according to claim 1 , wherein the formation of the at least one rear electrode includes forming a back surface field layer on the rear surface of the first conductivity-type semiconductor substrate by applying a rear electrode paste to the rear surface of the first conductivity-type semiconductor substrate and performing heat treatment.

8. The fabricating method according to claim 1 , wherein, prior to the forming of the at least one rear electrode, the method further comprises:

forming a dielectric layer on the rear surface of the first conductivity-type semiconductor substrate; and

forming at least one opening, through which the at least one rear electrode contacts the rear surface of the first conductivity-type semiconductor substrate, through the dielectric layer.