Display device and method of manufacturing the same
View Patent ↗This invention aims at reducing the probability of short-circuiting between terminals in a display device in which an IC driver is connected by COG. Terminals for connection with the IC driver are formed in a terminal region of a TFT substrate. The terminals are each comprised of a terminal metal, a first through-hole formed in a first insulation film, a second through-hole formed in a second insulation film, a first ITO formed in the first through-hole and being in contact with the terminal metal, and a second ITO formed over the first ITO. The second ITO is formed within an area where the second ITO is in contact with the first ITO but is not formed outside the second through-hole. This ensures that the distance between the ITOs of the adjacent terminals can be enlarged, whereby the probability of short-circuiting between the terminals can be lowered.
1. A display device comprising:
a TFT substrate having a display region in which pixels, each having a TFT, are formed in a matrix pattern, and a terminal region formed at a different region from the display region; and
an IC driver connected to the terminal region of the TFT substrate; wherein:
the terminal region has a plurality of terminals for connection with the IC driver formed therein;
each terminal of the plurality of terminals includes
a terminal metal,
a first through-hole formed in a first insulation film,
a first ITO layer formed in the first through-hole, the first ITO layer being in contact with the terminal metal,
a second through-hole formed in a second insulation film, and
a second ITO layer formed over the first ITO layer; and
the second ITO layer is formed within an area where the second ITO layer is in contact with the first ITO layer but is not formed outside the second through-hole,
wherein a width of the second ITO layer is narrower than a width of the first ITO layer,
wherein the plurality of terminals are arranged in a staggered pattern.
2. The display device according to claim 1 , wherein:
the second through-hole has a smaller diameter than the first through-hole.
3. The display device according to claim 1 , wherein:
the terminal metal is formed in the same layer as a drain electrode.
4. The display device according to claim 1 , wherein:
the terminal metal is formed in the same layer as a gate electrode.
5. A display device comprising:
a TFT substrate having a display region in which pixels, each having a TFT, are formed in a matrix pattern, and a terminal region formed at a different region from the display region; and
an IC driver connected to the terminal region of the TFT substrate; wherein:
the terminal region has a plurality of terminals for connection with the IC driver formed therein;
each terminal of the plurality of terminals includes
a terminal metal,
a through-hole formed in an insulation film, and
a first ITO layer formed in the through-hole, the first ITO layer being in contact with the terminal metal in the through-hole, and
a second ITO layer formed over the first ITO layer;
the second ITO layer is formed within an area where the second ITO layer is in contact with the first ITO layer but is not formed outside the through-hole,
wherein a width of the second ITO layer is narrower than a width of the first ITO layer, and
wherein the plurality of terminals are arranged in a staggered pattern.
6. The display device according to claim 1 , wherein:
the first ITO layer is simultaneously formed with a common electrode, and
the second ITO layer is simultaneously formed with a pixel electrode.
7. The display device according to claim 1 , wherein:
the width of the second ITO layer is smaller than the width of the terminal metal.
8. The display device according to claim 1 , wherein:
the width of the second ITO layer is equal to the width of the second through hole.
9. The display device according to claim 1 , wherein:
the second ITO layer, which is in contact with the first ITO layer, is polycrystalline.
10. The display device according to claim 5 , wherein:
the first ITO layer is simultaneously formed with a common electrode, and
the second ITO layer is simultaneously formed with a pixel electrode.
11. The display device according to claim 5 , wherein:
the width of the second ITO layer is smaller than the width of the terminal metal.
12. The display device according to claim 5 , wherein:
the width of the second ITO layer is equal to or less than the width of the second through hole.
13. The display device according to claim 5 , wherein:
the second ITO layer, which is in contact with the first ITO layer, is polycrystalline.