In-line metrology system
View Patent ↗A metrology system for gauging and spatially mapping a semiconductor material on a substrate can be used in controlling deposition and thermal activation processes.
1. A method of manufacturing a photovoltaic device gauging and spatially mapping a semiconductor material on a substrate during a semiconductor film deposition and anneal process comprising:
transporting a substrate on a conveyor;
depositing a semiconductor material on the substrate;
annealing the semiconductor material on the substrate;
generating an optical radiation to illuminate a portion of the semiconductor material;
measuring the optical property of the semiconductor material; and
analyzing the measurement data to obtain the information on the band gap, absorption edge, surface roughness and thickness of the semiconductor material.
2. The method of claim 1 , further comprising estimating of device performance based on the sensor measurement and a predictive model.
3. The method of any one of claim 1 , further comprising measuring the impurity percentage in the semiconductor material.
4. The method of any one of claim 1 , further comprising measuring the refractive index of the semiconductor material.
5. The method of any one of claim 1 , wherein the semiconductor material comprises an inter-diffused bilayer of semiconductor material.
6. The method of any one of claim 1 , further comprising adjusting the semiconductor material deposition and anneal process when it drifts from its purported baseline with a feed-back control loop.
7. The method of any one of claim 1 , further comprising adjusting the measured location of the semiconductor material for spatially mapping a semiconductor material.
8. The method of any one of claim 1 , further comprising utilizing the band-gap measured in the semiconductor material to control electrical junction formation of a semiconductor device and affect the performance of the semiconductor device.
9. The method of claim 2 , further comprising measuring the impurity percentage in the semiconductor material.
10. The method of claim 2 , further comprising measuring the refractive index of the semiconductor material.
11. The method of claim 2 , wherein the semiconductor material comprises an inter-diffused bilayer of semiconductor material.
12. The method of claim 2 , further comprising adjusting the semiconductor material deposition and anneal process when it drifts from its purported baseline with a feed-back control loop.
13. The method of claim 2 , further comprising adjusting the measured location of the semiconductor material for spatially mapping a semiconductor material.
14. The method of claim 2 , further comprising utilizing the band-gap measured in the semiconductor material to control electrical junction formation of a semiconductor device and affect the performance of the semiconductor device.