Preparation of stable, bright luminescent nanoparticles having compositionally engineered properties
View Patent ↗A method is provided for preparing luminescent semiconductor nanoparticles composed of a first component X, a second component A, and a third component B, wherein X, A, and B are different, by combining B with X and A in an amount such that the molar ratio B:(A+B) is in the range of approximately 0.001 to 0.20 and the molar ratio X:(A+B) is in the range of approximately 0.5:1.0 to 2:1. The characteristics of the thus-prepared nanoparticles can be substantially similar to those of nanoparticles containing only X and B while maintaining many useful properties characteristic of nanoparticles containing only X and A. The nanoparticles so prepared can additionally exhibit emergent properties such as a peak emission energy less than that characteristic of a particle composed of XA or XB alone; this method is particularly applicable to the preparation of stable, bright nanoparticles that emit in the red to infrared regions of the electromagnetic spectrum. Luminescent semiconductor nanoparticles having exemplary properties are also provided.
1. A dispersion of nanocrystals, comprising
a population of luminescent semiconductor nanocrystals dispersed in an organic solvent system, wherein each nanocrystal in the population comprises a crystalline CdSeTe core and a protective, passivating overlayer, wherein the core comprises Cd a Se b Te c in which the ratio a:(b+c) is in the range of about 0.7 to about 1.5 and the ratio c:(b+c) is in the range of about 0.001 to about 0.20.
2. The dispersion of claim 1 , wherein the emission quantum yield is at least 0.10.
3. The dispersion of claim 1 , wherein the emission quantum yield is at least 0.40.
4. The dispersion of claim 1 , wherein the emission quantum yield is at least 0.80.
5. The dispersion of claim 1 , wherein the peak emission wavelength for the population of nanocrystals is greater than 600 nm.
6. The dispersion of claim 1 , wherein the peak emission wavelength for the population of nanocrystals is greater than 650 nm.
7. The dispersion of claim 1 , wherein the population of nanocrystals exhibits infrared emission.
8. The dispersion of claim 1 , wherein the protective, passivating overlayer comprises a semiconductive material having a band gap energy greater than that of CdSeTe.
9. The dispersion of claim 1 , wherein the overlayer comprises CdZnS.
10. The dispersion of claim 1 , wherein the overlayer comprises Cd x Zn y S z , wherein the ratio (x+y):z is in the range of about 0.7 to about 1.5.
11. The dispersion of claim 9 , wherein the overlayer further comprises Se or Te.
12. The dispersion of claim 1 , wherein the peak emission wavelength of the population of the nanocrystals is longer than that of a population of CdSe nanocrystals and longer than that of a population of CdTe nanocrystals, wherein the CdSeTe, CdSe, and CdTe nanocrystals are identically sized, and wherein the CdSeTe, CdSe, and CdTe nanocrystals each comprise a protective, passivating overlayer, wherein the overlayer on the CdSeTe, CdSe, and CdTe nanocrystals comprises the same semiconductor material.