NON-PLASMA DRY ETCHING APPARATUS
A non-plasma dry etching apparatus is capable of forming textures uniformly only on one side of a silicon substrate. The non-plasma dry etching apparatus includes a stage on which a silicon substrate is placed is used as a base including plural layers. The plural layers include an electrostatic chuck layer, a heat-resistant glass layer and a space layer from the side on which the silicon substrate is placed.
1 . A non-plasma dry etching apparatus comprising:
a processing container;
a nozzle spraying gas into the processing container;
a gas cylinder connected to the nozzle;
a pump discharging gas inside the processing container;
a regulating valve controlling an inside of the processing container to a given pressure; and
a stage arranged inside the processing container and on which a silicon substrate is placed,
wherein the stage is a base formed by plural layers, including an electrostatic chuck layer, a heat-resistant glass layer and a space layer from the side on which the silicon substrate is placed.
2 . The non-plasma dry etching apparatus according to claim 1 ,
wherein the base is arranged on a bottom face of the processing container.
3 . The non-plasma dry etching apparatus according to claim 1 ,
wherein a thickness of the heat-resistant glass layer is 0.5 mm or more and a thickness of the space layer is 0.01 mm or more.
4 . The non-plasma dry etching apparatus according to claim 1 ,
wherein a thickness of the heat-resistant glass layer is 2 mm or more and a thickness of the space layer is 2 mm or more.
5 . The non-plasma dry etching apparatus according to claim 1 ,
wherein the space layer is formed by a member made of Teflon (registered trademark).
6 . The non-plasma dry etching apparatus according to claim 1 ,
wherein the space layer is a thermal contact resistance portion of the base and the heat-resistant glass layer,
7 . The non-plasma dry etching apparatus according to claim 6 ,
wherein the thermal contact resistance portion is the heat-resistant glass layer or the base, in which a surface roughness thereof is Ra=6.3 or more in JIS notation.
8 . The non-plasma dry etching apparatus according to claim 1 ,
wherein the heat-resistant glass layer is formed by plural layers including Teflon (registered trademark).
9 . The non-plasma dry etching apparatus according to claim 1 ,
wherein the total thermal resistance value of the electrostatic chuck layer, the heat-resistant glass layer and the space layer is 0.7 K/W or more.
10 . The non-plasma dry etching apparatus according to claim 1 ,
wherein the total thermal resistance value of the electrostatic chuck layer, the heat-resistant glass layer and the space layer is 5 K/W or more.
11 . A non-plasma dry etching apparatus comprising:
a tray having frames;
heat-resistant glass placed on the frames; and
electrostatic adsorption stages bonded on the heat-resistance glass,
wherein plural substrates are placed on stages formed by the above components to be exposed, to chlorine trifluoride gas and etched.