High-density array of micro-machined electrodes for neural stimulation
The present invention is a micro-machined electrode for neural-electronic interfaces which can achieve a ten times lower impedance and higher charge injection limit for a given material and planar area.
1. An electrode comprising: an electrode base embedded in an insulating substrate; and a micromachined cylindrical micropost on the electrode base extending beyond the electrode base and insulating substrate and defining a hollow center.
2. The electrode according to claim 1 , further comprising a plurality of micromachined protuberances on the electrode base extending beyond the insulating substrate and defining hollow centers.
3. The electrode according to claim 1 , wherein the protuberance extends about 20 μm beyond the electrode base.
4. The electrode according to claim 1 , wherein the protuberance are about 40 μm in width.
5. The electrode according to claim 1 , wherein the protuberances comprise platinum.
6. The electrode according to claim 1 , wherein the protuberances comprise gold.
7. The electrode according to claim 1 , wherein the protuberances comprise gold covered with platinum.
8. The electrode according to claim 1 , wherein the protuberances comprise iridium.
9. The electrode according to claim 1 , wherein the protuberances comprise titanium oxide.
10. The electrode according to claim 1 , wherein the protuberances comprise a first metal and a second metal forming a hermetic seal over the first metal.
11. An electrode array comprising: a lower flexible insulating layer; a flexible conductive layer; an upper flexible insulating layer including voids exposing portions of the flexible conductive layer; and micromachined cylindrical microposts on the portions of the flexible conductive layer extending beyond the upper flexible insulating layer and defining hollow centers.
12. The electrode array according to claim 11 , wherein at least one of the flexible insulating layers comprises polyimide.
13. The electrode array according to claim 11 , wherein the flexible conductive layer comprises platinum.
14. The electrode array according to claim 11 , wherein the flexible conductive layer comprises titanium.
15. The electrode array according to claim 11 , wherein the protuberances comprise platinum.
16. The electrode array according to claim 11 , wherein the protuberances comprise gold.
17. The electrode array according to claim 11 , wherein the protuberances comprise gold covered with platinum.
18. The electrode array according to claim 11 , wherein the protuberances comprise iridium.
19. The electrode array according to claim 11 , wherein the protuberances comprise iridium oxide.
20. The electrode array according to claim 11 , wherein the protuberances comprise a first metal and a second metal forming a hermetic seal over the first metal.