Granted Patent B2

US 9,190,970 · App. 14/080,711 · Granted Nov 17, 2015

Abstract

Claims (22)

1. An integrated power amplifier circuit comprising:

first and second amplifiers fabricated on one or more dies, the one or more dies being mounted on a support structure;

a first set of one or more connection elements connected to the first amplifier and passing above a portion of the support structure; and

a second set of one or more connection elements connected to the second amplifier and passing above a portion of the support structure,

wherein the support structure comprises at least one void, at least a portion of the at least one void being positioned directly underneath at least one of the first and second sets of one or more connection elements; and

wherein the support structure comprises a flange, and wherein the at least one void is formed in the flange.

2. The circuit of claim 1 , wherein the at least one void comprises:

a first aperture formed in the support structure underneath the first set of one or more connection elements; and

a second aperture formed in the support structure underneath the second set of one or more connection elements.

3. The circuit of claim 1 , wherein the at least one void comprises a segment of the support structure that has been removed, the segment extending from an edge of the support structure towards the die.

4. The circuit of claim 1 , wherein the first and second amplifiers are substantially adjacent to each other.

5. The circuit of claim 1 , wherein the horizontal extent of the at least one aperture in a first direction is greater than that of the set of one or more connection elements which the at least one aperture is positioned underneath.

6. The circuit of claim 1 , wherein the integrated power amplifier circuit is a Doherty power amplifier circuit, and wherein the first amplifier is the main amplifier of the Doherty power amplifier circuit and the second amplifier is the peak amplifier of the Doherty power amplifier circuit.

7. The circuit of claim 1 , wherein at least one of the first and second amplifiers comprises a plurality of amplifying transistors.

8. A radio frequency transmitter comprising an integrated power amplifier circuit according to any claim 1 .

9. A mobile communication base station comprising an integrated power amplifier circuit according to claim 1 .

10. A packaged integrated circuit comprising an integrated power amplifier circuit according to claim 1 .

11. A method of manufacturing an integrated power amplifier circuit comprising:

providing first and second amplifiers on one or more dies, the one or more dies being mounted on a support structure having a flange;

providing a first set of one or more connection elements connected to the first amplifier and passing above a portion of the support structure;

providing a second set of one or more connection elements connected to the second amplifier and passing above a portion of the support structure; and

forming at least one void in the flange of the support structure, at least a portion of the at least one void being positioned directly underneath at least one of the first and second sets of one or more connection elements.

Assignments (13)