MULTI-LAYER COMPOSITE WITH METAL-ORGANIC LAYER

1 . A multi-layer composite precursor comprising:

i. a substrate, wherein the substrate comprises

1. a light emitting organic compound

2. a first surface, and

3. a second surface,

wherein the second surface is superimposed by a transparent electrically conducting layer,

ii. a liquid phase superimposing at least a part of the first surface comprising a metal-organic compound, wherein the metal-organic compound comprises an organic moiety, wherein the organic moiety comprises a C═O group; and wherein the liquid phase further comprises a first silicon compound, wherein the first silicon compound comprises at least one carbon atom and at least one nitrogen atom.

2 . The multi-layer composite precursor according to claim 1 , wherein the organic moiety of the metal-organic component is selected from the group consisting of a carbonate, an oxalate, an ester, a carboxylate, a halogencarboxylate, a hydroxycarboxylate, an acetonate and a ketonate or mixtures of at least two thereof.

3 . The multi-layer composite precursor according to claim 1 , wherein the organic moiety of the metal-organic compound comprises acetylacetonate or neodecanoate or ethylhexanoate or mixtures of at least two thereof.

4 . The multi-layer composite precursor according to claim 1 , wherein the first silicon compound is selected from the group consisting of an aminosilane and an aminooxysilane or mixtures of at least two thereof.

5 . The multi-layer composite precursor according to claim 1 , wherein the liquid phase further comprises a further silicon compound with at least two silicon atoms, wherein the at least two silicon atoms are connected via one oxygen atom.

6 . The multi-layer composite precursor according to claim 5 , wherein the further silicon compound is selected from the group consisting of a siloxane and a polysiloxane or mixtures thereof.

7 . The multi-layer composite precursor according to claim 1 , wherein the liquid phase comprises the first silicon compound or the further silicon compound or both in a range of from 0.1 to 50 wt.-% based on the total weight of the liquid phase.

8 . The multi-layer composite precursor according to claim 1 , wherein the metal-organic compound is converted into a metal, wherein the converted metal has a content of an organic moiety of less than 10 wt.-% based on the weight of the metal.

9 . The multi-layer composite precursor according to claim 1 , wherein the liquid phase further comprises a component selected from the group consisting of:

M1. an organic compound selected from the group consisting of an alcohol, an organic acid, an amine, a diamine an ester, an ether, a ketone, a silicone, a sulfonate and a polymer or mixtures of at least two thereof;

M2. an inorganic compound selected from the group consisting of water, a silane, an inorganic ester, a ceramic, a glass, a polymer and a metal or mixtures of at least two thereof;

or mixtures thereof.

10 . The multi-layer composite precursor according to claim 1 , wherein the metal-organic compound comprises a metal selected from the group consisting of silver, gold, platinum and palladium or at least two thereof.

11 . The multi-layer composite precursor according to claim 1 , wherein the metal-organic compound comprises silver.

12 . The multi-layer composite precursor according to claim 1 , wherein the liquid phase has a thickness in a range of from 0.1 to 5000 μm.

13 . The multi-layer composite precursor according to claim 1 , wherein the liquid phase has a viscosity in a range of from 100 to 50000 mPa*s.

14 . The multi-layer composite precursor according to claim 1 , wherein the substrate comprises a component selected from the group consisting of a ceramic, a polymer, a glass and a metal or a combination thereof.

15 . A process for preparing a composite comprising the steps of:

a) providing a substrate, wherein the substrate comprises

1. a light emitting organic compound,

2. a first surface, and

3. a second surface,

 wherein the second surface is superimposed by a transparent electrically conducting layer;

b) applying a liquid phase onto at least a part of the first surface in order to obtain a composite precursor, wherein the liquid phase comprises a metal-organic compound and wherein the liquid phase further comprises a first silicon compound, wherein the silicon compound comprises at least one carbon atom and at least one nitrogen atom; and

c) treating the composite precursor at a temperature in a range from 100 to 250° C., in order to obtain the composite,

wherein the metal-organic compound comprises an organic moiety, wherein the organic moiety comprises a C═O group.

16 . The process according to claim 15 , wherein the organic moiety of the metal-organic component is selected from the group consisting of a carbonate, an oxalate, an ester, a carboxylate, a halogencarboxylate, a hydroxycarboxylate, an acetonate and a ketonate or mixtures of at least two thereof.

17 . The process according to claim 15 , wherein the organic moiety of the metal-organic compound comprises acetylacetonate or neodecanoate or ethylhexanoate, or mixtures of at least two of them.

18 . The process according to claim 15 , wherein the first silicon compound is selected from the group consisting of an aminosilane and an aminooxysilane or mixtures of at least two thereof.

19 . The process according to claim 15 , wherein the liquid phase comprises a further silicon compound with at least two silicon atoms, wherein the at least two silicon atoms are connected via one oxygen atom.

20 . The process according to claim 19 , wherein the further silicon compound is selected from the group consisting of a siloxane or a polysiloxane or mixtures thereof.

21 . The process according to claim 15 , wherein the first silicon compound or the further silicon compound or both are comprised in the liquid phase in a range of from 0.1 to 50 wt.-% based on the weight of the liquid phase.

22 . The process according to claim 15 , wherein the metal-organic compound is converted into a metal, wherein the converted metal has a content of an organic moiety of less than 10 wt.-% based on the weight of the metal.

23 . The process according to claim 15 , wherein the liquid phase further comprises a component selected from the group consisting of:

M1. an organic compound selected from the group consisting of an alcohol, an organic acid, an amine, a diamine an ester, an ether, a ketone, a silicone, a sulfonate and a polymer or mixtures of at least two thereof;

M2. an inorganic compound selected from the group consisting of water, a silane, an inorganic ester, a ceramic, a glass, a polymer and a metal or mixtures of at least two thereof;

or mixtures thereof.

24 . The process according to claim 15 , wherein the metal-organic compound comprises a metal selected from the group consisting of silver, gold, platinum and palladium or at least two thereof.

25 . The process according to claim 15 , wherein the metal-organic compound comprises silver.

26 . The process according to claim 15 , wherein the composite comprises a metal layer, wherein the metal layer has a thickness in a range of from 0.01 to 10 μm after step (c).

27 . The process according to claim 15 , wherein the liquid phase has a viscosity in a range of from 100 to 50000 mPa*s.

28 . The process according to claim 15 , wherein the substrate comprises a component selected from the group consisting of a ceramic, a polymer, a glass and a metal or a combination of at least two thereof.

29 . A composite obtainable according to claim 15 .

30 . An electronic component comprising a composite according to claim 29 .

31 . The electronic component of claim 30 , wherein the electronic component is selected from the group consisting of an OLED, a transistor and a touch screen.

32 . A multi-layer composite comprising:

i. a substrate, and

ii. a metal layer;

wherein the metal layer has at least one of the following properties:

P1. a surface roughness in a range of 0.1 nm to 1000 nm;

P2. a resistivity in a range of 1×10 −6 Ω·cm to 1×10 −3 Ω·cm;

P3. a crystal-size in a range of 1 nm to 10 μm; or

P4. a thickness in a range of from 0.001 to 50 μm.

33 . An electronic component comprising a composite according to claim 32 .

34 . The electronic component of claim 33 , wherein the electronic component is selected from the group consisting of an OLED, a transistor and a touch screen.