IP Library Granted Patent US 9,512,681
Granted Patent B1
US 9,512,681 · App. 14/081,960 · Granted Dec 6, 2016

Polycrystalline diamond compact comprising cemented carbide substrate with cementing constituent concentration gradient

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Quick Facts
Patent No.
US 9,512,681
App. No.
14/081,960
Granted
Dec 6, 2016
Kind
B1
Abstract

In an embodiment, a polycrystalline diamond compact includes a cemented carbide substrate including a carbide constituent cemented with a cementing constituent. The cementing constituent has a non-homogenous concentration within the substrate that includes a substantially continuous gradient. A first portion (e.g. at or near a center) of the substrate has a concentration of the cementing constituent that differs from a concentration of the cementing constituent at a second portion (e.g., at or near an outer surface) of the substrate. Thus, the concentration gradient exhibits a substantially smooth gradient, with increasing distance from the first portion of the substrate towards the second portion of the substrate. This provides the substrate with relatively higher wear resistance in one region (e.g., at or near the outer surface) and relatively higher toughness in another region (e.g., at or near the center).

Claims (29)

1. A polycrystalline diamond compact, comprising:

a cemented carbide substrate including a carbide constituent cemented with a cementing constituent, the cemented carbide substrate including:

a first portion of the cemented carbide substrate having a first concentration of the cementing constituent; and

a second portion of the cemented carbide substrate laterally spaced from the first portion, the second portion having a second concentration of the cementing constituent that is different than the first concentration of the cementing constituent;

wherein the cementing constituent has a concentration exhibiting a substantially continuous concentration gradient between the first portion and the second portion, wherein the substantially continuous gradient is at least partially generally parabolic or at least partially inverted parabolic; and

a polycrystalline diamond table bonded to the cemented carbide substrate, the polycrystalline diamond table including a plurality of bonded diamond grains exhibiting diamond-to-diamond bonding therebetween, the plurality of bonded diamond grains defining a plurality of interstitial regions.

2. The polycrystalline diamond compact of claim 1 wherein the cementing constituent includes cobalt.

3. The polycrystalline diamond compact of claim 1 wherein the carbide constituent includes tungsten carbide.

4. The polycrystalline diamond compact of claim 1 wherein the first portion includes a center portion at or near a center of the substrate and the second portion includes an outer portion at or near an outer lateral surface of the substrate.

5. The polycrystalline diamond compact of claim 4 wherein the center portion of the substrate has a higher concentration of the cementing constituent than the outer portion of the substrate.

6. The polycrystalline diamond compact of claim 4 wherein the substantially continuous gradient extends radially so that locations of the substrate that are located at a substantially equal radius from the center of the substrate have approximately equal respective concentrations of the cementing constituent.

7. The polycrystalline diamond compact of claim 4 wherein the cementing constituent includes cobalt, the cobalt having a concentration at the center that is from about 11.5% to about 13.5% by weight.

8. The polycrystalline diamond compact of claim 4 wherein the cementing constituent includes cobalt, the cobalt having a concentration at the outer lateral surface that is from about 6% to about 11.5% by weight.

9. The polycrystalline diamond compact of claim 4 wherein the cementing constituent includes cobalt, the cobalt having a concentration at the center of the substrate that is from about 10% to about 15% by weight and the cobalt has a concentration at the outer lateral surface that is from about 6% to about 11.5% by weight.

10. The polycrystalline diamond compact of claim 1 wherein the polycrystalline diamond table is integrally formed with the substrate or the polycrystalline diamond table is a preformed polycrystalline diamond table.

11. The polycrystalline diamond compact of claim 1 wherein the polycrystalline diamond table includes a leached region from which metal-solvent catalyst has been at least partially depleted.

12. A rotary drill bit comprising:

a bit body including a leading end structure configured to facilitate drilling a subterranean formation; and

a plurality of cutting elements mounted to the bit body, at least one of the plurality of cutting elements including:

a cemented carbide substrate including a carbide constituent cemented with a cementing constituent, the cemented carbide substrate including:

a first portion of the cemented carbide substrate having a first concentration of the cementing constituent; and

a second portion of the cemented carbide substrate laterally spaced from the first portion, the second portion having a second concentration of the cementing constituent that is different than the first concentration of the cementing constituent;

wherein the cementing constituent concentration exhibits a substantially continuous concentration gradient between the first portion and the second portion, wherein the substantially continuous gradient is at least partially generally parabolic or at least partially inverted parabolic; and

a polycrystalline diamond table bonded to the cemented carbide substrate, the polycrystalline diamond table including a plurality of bonded diamond grains exhibiting diamond-to-diamond bonding therebetween, the plurality of bonded diamond grains defining a plurality of interstitial regions.

13. The rotary drill bit of claim 12 wherein the cementing constituent includes cobalt.

14. The rotary drill bit of claim 12 wherein the carbide constituent includes tungsten carbide.

15. The rotary drill bit of claim 12 wherein the first portion includes a center portion at or near a center of the substrate and the second portion includes an outer portion at or near an outer lateral surface of the substrate.

16. The rotary drill bit of claim 15 wherein the center portion of the substrate has a higher concentration of the cementing constituent than the outer portion of the substrate.

17. The rotary drill bit of claim 15 wherein the cementing constituent includes cobalt, the cobalt having a concentration at the center of the substrate that is from about 10% to about 15% and the cobalt has a concentration at the at least one outer lateral surface that is from about 6% to about 11.5%.

Assignments (6)
SECURITY INTEREST Recorded Jul 18, 2025
From: US SYNTHETIC CORPORATION
To: KEYBANK NATIONAL ASSOCIATION
Reel/Frame 074973/0089 →
RELEASE OF SECURITY INTEREST IN PATENTS Recorded Jul 17, 2025
From: JPMORGAN CHASE BANK, N.A.
To: CHAMPIONX LLC; APERGY ESP SYSTEMS, LLC; APERGY BMCS ACQUISITION CORP; HARBISON-FISCHER, INC.; NORRIS RODS, INC.,; NORRIS RODS, INC.,; NORRISEAL-WELLMARK, INC.; PCS FERGUSON, INC.; QUARTZDYNE, INC.; US SYNTHETIC CORPORATION
Reel/Frame 072004/0019 →
RELEASE OF SECURITY INTEREST Recorded Jun 7, 2022
From: BANK OF AMERICA, N.A.
To: ACE DOWNHOLE, LLC; HARBISON-FISCHER, INC.; NORRIS RODS, INC.; PCS FERGUSON, INC.; QUARTZDYNE, INC.; SPIRIT GLOBAL ENERGY SOLUTIONS, INC.; THETA OILFIELD SERVICES, INC.; APERGY BMCS ACQUISITION CORP.; NORRISEAL-WELLMARK, INC.; US SYNTHETIC CORPORATION; WINDROCK, INC.
Reel/Frame 060305/0001 →
SECURITY INTEREST Recorded Jun 5, 2020
From: ACE DOWNHOLE, LLC; APERGY BMCS ACQUISITION CORP.; HARBISON-FISCHER, INC.; NORRIS RODS, INC.; NORRISEAL-WELLMARK, INC.; PCS FERGUSON, INC.; QUARTZDYNE, INC.; SPIRIT GLOBAL ENERGY SOLUTIONS, INC.; THETA OILFIELD SERVICES, INC.; US SYNTHETIC CORPORATION; WINDROCK, INC.
To: BANK OF AMERICA, N.A.
Reel/Frame 053790/0001 →
SECURITY AGREEMENT Recorded May 9, 2018
From: APERGY (DELAWARE) FORMATION, INC.; APERGY BMCS ACQUISITION CORP.; APERGY ENERGY AUTOMATION, LLC; HARBISON-FISCHER, INC.; NORRISEAL-WELLMARK, INC.; PCS FERGUSON, INC.; QUARTZDYNE, INC.; SPIRIT GLOBAL ENERGY SOLUTIONS, INC.; US SYNTHETIC CORPORATION; WINDROCK, INC.
To: JPMORGAN CHASE BANK, N.A.
Reel/Frame 046117/0015 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 15, 2013
From: MUKHOPADHYAY, DEBKUMAR
To: US SYNTHETIC CORPORATION
Reel/Frame 031616/0516 →