Conductive paste and method for manufacturing the same, wiring using the conductive paste and method for manufacturing the same
View Patent ↗The present invention relates to a conductive paste in which fine metal particles are dispersed into a chemical adsorption liquid produced from a mixture of at least an alkoxysilane compound, a silanol condensation catalyst, and a nonaqueous organic solvent to form an organic thin film comprising molecules covalently bound to the surface of the fine metal particle by having the surface of the fine metal particle react with the alkoxysilane compound, so that fine metal particles that are given a reactive function to the surface are produced while almost maintaining the original conductivity of the fine metal particles, and further the particles are pasted with an organic solvent.
1. A wiring comprising:
first fine metal particles covered by a first organic thin film formed by reaction of the first fine metal particles with a diacetylene, the organic thin film covalently bound to a surface of the fine metal particles; and
second fine metal particles covered by a second organic thin film covalently bound to a surface of the second fine metal particles, the second organic thin film comprising a chalcone at a first end and covalently bound to the surface of the second fine metal particles via a Si or S at a second end;
wherein:
the wiring comprises the hardened reaction product of the first and second organic thin films; and
the diacetylene is HC≡C—C≡C(CH 2 ) 15 SiCl 3 ;
HC≡C—C≡C(CH 2 ) 2 Si(CH 3 ) 2 (CH 2 ) 15 SiCl 3 ;
HC≡C—C≡C(CH 2 ) 2 Si(CH 3 ) 2 (CH 2 ) 9 SiCl 3 ;
CH 3 (CH 2 ) 3 C≡C—C≡C(CH 2 ) 15 SiCl 3 ;
CH 3 (CH 2 ) 3 C≡C—C≡C(CH 2 ) 2 Si(CH 3 ) 2 (CH 2 ) 15 SiCl 3 ; or
CH 3 (CH 2 ) 3 C≡C—C≡C(CH 2 ) 2 Si(CH 3 ) 2 (CH 2 ) 9 SiCl 3 .
2. The wiring of claim 1 , wherein the first and second organic thin films covalently bound to the surface comprise a monomolecular film.
3. The wiring of claim 1 further comprising a base material upon which the first fine metal particle covered by the first organic thin film and the second fine metal particles covered by the second organic thin film are hardened.
4. The wiring of claim 1 , wherein the first fine metal particles comprise indium tin oxide, tin oxide, gold, silver, copper, nickel, silver-plated gold, silver-plated copper, or silver-plated nickel.
5. The wiring of claim 1 , wherein the second fine metal particles comprise indium tin oxide, tin oxide, gold, silver, copper, nickel, silver-plated gold, silver-plated copper, or silver-plated nickel.
6. An electronic component comprising a wiring comprising:
first fine metal particles covered by a first organic thin film formed by reaction of the first fine metal particles with a diacetylene; and
second fine metal particles covered by a second organic thin film covalently bound to a surface of the second fine metal particles, the second organic thin film comprising a chalcone at a first end and covalently bound to the surface of the second fine metal particles via a Si or S at a second end;
wherein:
the wiring comprises the hardened reaction product of the first and second organic thin films; and
the diacetylene is HC≡C—C≡C(CH 2 ) 15 SiCl 3 ;
HC≡C—C≡C(CH 2 ) 2 Si(CH 3 ) 2 (CH 2 ) 15 SiCl 3 ;
HC≡C—C≡C(CH 2 ) 2 Si(CH 3 ) 2 (CH 2 ) 9 SiCl 3 ;
CH 3 (CH 2 ) 3 C≡C—C≡C(CH 2 ) 15 SiCl 3 ;
CH 3 (CH 2 ) 3 C≡C—C≡C(CH 2 ) 2 Si(CH 3 ) 2 (CH 2 ) 15 SiCl 3 ; or
CH 3 (CH 2 ) 3 C≡C—C≡C(CH 2 ) 2 Si(CH 3 ) 2 (CH 2 ) 9 SiCl 3 .
7. The electronic component of claim 6 , wherein the first fine metal particles comprise indium tin oxide, tin oxide, gold, silver, copper, nickel, silver-plated gold, silver-plated copper, or silver-plated nickel.
8. The electronic component of claim 6 , wherein the second fine metal particles comprise indium tin oxide, tin oxide, gold, silver, copper, nickel, silver-plated gold, silver-plated copper, or silver-plated nickel.
9. The electronic component of claim 6 , wherein the organic thin film covalently bound to the surface comprises a monomolecular film.
10. The electronic component of claim 6 further comprising a base material upon which the first fine metal particle covered by the first organic thin film and the second fine metal particles covered by the second organic thin film are hardened.
11. An electronic device comprising a wiring comprising:
first fine metal particles covered by a first organic thin film formed by reaction of the first fine metal particles with a diacetylene; and
second fine metal particles covered by a second organic thin film covalently bound to a surface of the second fine metal particles, the second organic thin film comprising a chalcone at a first end and covalently bound to the surface of the second fine metal particles via a Si or S at a second end;
wherein:
the wiring comprises the hardened reaction product of the first and second organic thin films; and
the diacetylene is HC≡C—C≡C(CH 2 ) 15 SiCl 3 ;
HC≡C—C≡C(CH 2 ) 2 Si(CH 3 ) 2 (CH 2 ) 15 SiCl 3 ;
HC≡C—C≡C(CH 2 ) 2 Si(CH 3 ) 2 (CH 2 ) 9 SiCl 3 ;
CH 3 (CH 2 ) 3 C≡C—C≡C(CH 2 ) 15 SiCl 3 ;
CH 3 (CH 2 ) 3 C≡C—C≡C(CH 2 ) 2 Si(CH 3 ) 2 (CH 2 ) 15 SiCl 3 ; or
CH 3 (CH 2 ) 3 C≡C—C≡C(CH 2 ) 2 Si(CH 3 ) 2 (CH 2 ) 9 SiCl 3 .
12. The electronic device of claim 11 , wherein the first fine metal particles comprise indium tin oxide, tin oxide, gold, silver, copper, nickel, silver-plated gold, silver-plated copper, or silver-plated nickel.
13. The electronic device of claim 11 , wherein the second fine metal particles comprise indium tin oxide, tin oxide, gold, silver, copper, nickel, silver-plated gold, silver-plated copper, or silver-plated nickel.
14. The electronic device of claim 11 , wherein the organic thin film covalently bound to the surface comprises a monomolecular film.
15. The electronic device of claim 11 further comprising a base material upon which the first fine metal particle covered by the first organic thin film and the second fine metal particles covered by the second organic thin film are hardened.