Semiconductor device
View Patent ↗A semiconductor device includes a semiconductor substrate on which a diode region and an IGBT region are formed. The diode region of the semiconductor substrate includes a first conductive type specific semiconductor region that is formed in a portion of an area facing a front surface of the semiconductor substrate, a second conductive type anode region that is formed in another portion of the area facing the front surface of the semiconductor substrate and is formed along a lower side of the specific semiconductor region, and a first conductive type diode drift region that is formed on a lower side of the anode region. The specific semiconductor region is separated from the diode drift region by the anode region, and is electrically connected to the trench gate electrode.
1. A semiconductor device including a semiconductor substrate, comprising:
an IGBT region that includes a first conductive type emitter region formed in an area facing a front surface of the semiconductor substrate, a second conductive type body region formed on a lower side of the emitter region, a first conductive type IGBT drift region formed on a lower side of the body region, a gate insulating film that covers an inside wall of a gate trench extending from the front surface of the semiconductor substrate to the IGBT drift region, and contacts the emitter region, and a trench gate electrode arranged inside the gate insulating film; and
a diode region that includes a first conductive type specific semiconductor region that is formed in a portion of an area facing the front surface of the semiconductor substrate and is electrically connected to the trench gate electrode, a second conductive type anode region that is formed in another portion of the area facing the front surface of the semiconductor substrate and is formed along a lower side of the specific semiconductor region, and a first conductive type diode drift region that is formed on a lower side of the anode region and is separated from the specific semiconductor region by the anode region.
2. The semiconductor device according to claim 1 , wherein
the gate insulating film and the trench gate electrode are formed along the IGBT region and the diode region; and
the specific semiconductor region is formed in an area not adjacent to the gate insulating film in the diode region.
3. The semiconductor device according to claim 1 , wherein
the anode region includes a first anode region formed in at least a part of the other portion of the area facing the front surface of the semiconductor substrate, and a second anode region formed on a lower side of the first anode region;
a second conductive type impurity concentration of the first anode region is higher than a second conductive type impurity concentration of the second anode region; and
a position of a lower end portion of the specific semiconductor region is lower than a position of a lower end portion of the first anode region.
4. The semiconductor device according to claim 1 , wherein a crystal defect region is formed in the diode drift region, the crystal defect region having a crystal defect density that is higher than a crystal defect density of a region other than the crystal defect region of the diode drift region.