Semiconductor device
A semiconductor device includes a semiconductor substrate, a light receiving element region, a peripheral region, a boundary region, a plurality of signal lines, and a conductive layer. In light receiving element region, light receiving elements for performing photoelectric conversion are formed. Peripheral region is formed outside light receiving element region for performing input/output of an electric signal from/to the outside of the semiconductor substrate. Boundary region is formed between light receiving element region and peripheral region. The plurality of signal lines are arranged in boundary region for performing input/output of electric signals between light receiving element region and peripheral region. Conductive layer is arranged in a layer different from each of the plurality of signal lines. A relative position of conductive layer as seen from each of the plurality of signal lines is all identical, and conductive layer is all arranged in an identical layer.
1. A semiconductor device comprising:
a semiconductor substrate having a main surface;
a light receiving element region formed in said main surface of said semiconductor substrate, in which light receiving elements for performing photoelectric conversion are formed;
a peripheral region formed outside said light receiving element region in said main surface of said semiconductor substrate for performing input/output of electric signals from/to said semiconductor substrate;
a boundary region formed between said light receiving element region and said peripheral region in plan view;
a plurality of signal lines arranged in said boundary region for performing input/output of electric signals between said light receiving element region and said peripheral region; and
a CMP dummy arranged in a layer different from each of the plurality of said signal lines,
wherein a relative position of said CMP dummy with respect to each of the plurality of said signal lines is the same,
wherein said CMP dummy is arranged in a single layer,
wherein a fixed potential is applied to said CMP dummy, and
wherein said CMP dummy overlaps with each of the plurality of said signal lines in plan view.
2. The semiconductor device according to claim 1 ,
wherein said CMP dummy comprises a single unitary member that overlaps with all of the plurality of said signal lines.
3. The semiconductor device according to claim 1 , wherein an area of overlap between the CMP dummy and the signal line in plan view is the same for each signal line, and a relative location of said overlap along the signal line is the same for each signal line.
4. A semiconductor device comprising:
a semiconductor substrate;
a light receiving element region with a plurality of light receiving elements formed in the semiconductor substrate, the light receiving elements being configured for photoelectric conversion;
a peripheral region configured for communicating electrical signals to/from the semiconductor device;
a boundary region disposed between the light receiving element region and the peripheral region in plan view;
a plurality of signal lines configured for communicating electrical signals between the light receiving element region and the peripheral region, each of the signal lines extending from the light receiving element region through the boundary region to the peripheral region; and
a CMP dummy disposed in the boundary region in a layer different from the plurality of signal lines,
wherein the CMP dummy is arranged in single layer and has a fixed potential applied thereto,
wherein an arrangement of the CMP dummy with respect to each of the signal lines is such that an impedance of each of the signal lines is the same, and
wherein the CMP dummy overlaps each of the plurality of signal lines in plan view.
5. The semiconductor device according to claim 4 , wherein an area of overlap between the CMP dummy and the signal line in plan view is the same for each signal line, and a relative location of said overlap along the signal line is the same for each signal line.