Light-emitting device
View Patent ↗A light-emitting device includes: a Distributed Bragg reflector comprising alternate first semiconductor layers and second semiconductor layers, wherein each first semiconductor layer comprises a low-refractive-index part having a depth; and a light-emitting semiconductor stack associated with the Distributed Bragg reflector; wherein the depths of the low-refractive-index parts of the first semiconductor layers are gradually changed in a direction toward the light-emitting semiconductor stack.
1. A light-emitting device, comprising:
a substrate;
a light-emitting semiconductor stack on the substrate and having a first side and a second side opposite to the first side; and
a Distributed Bragg reflector on the first side of the light-emitting semiconductor stack and comprising alternate first semiconductor layers and second semiconductor layers, wherein each first semiconductor layer comprises a low-refractive-index part having a depth,
wherein the depths of the low-refractive-index parts of the first semiconductor layers are gradually decreased in a direction from the substrate toward the light-emitting semiconductor stack, and the light-emitting device is devoid of any Distributed Bragg reflector on the second side of the light-emitting semiconductor stack.
2. The light-emitting device according to claim 1 , wherein each first semiconductor layer comprises a high-refractive-index part surrounded by the corresponding low-refractive-index part.
3. The light-emitting device according to claim 2 , wherein a material of each high-refractive-index part comprises a first Group III-V semiconductor material comprising Al.
4. The light-emitting device according to claim 3 , wherein each aluminum concentration of the high-refractive-index parts is not less than 80 percent of total Group III elements in the first Group III-V semiconductor material.
5. The light-emitting device according to claim 4 , wherein the first Group III-V semiconductor material is selected from the group consisting of Al x Ga (1-x) As, Al x Ga (1-x) P, Al x Ga 1-x) AsP, Al x As (1-x) Sb, Al x In (1-x) GaP, and Al x Ga (1-x) N, wherein x is not less than 0.8.
6. The light-emitting device according to claim 2 , wherein each high-refractive-index part has a first aluminum concentration and the first aluminum concentrations of the first semiconductor layers are gradually decreased in a direction from the substrate toward the light-emitting semiconductor stack.
7. The light-emitting device according to claim 6 , wherein each second semiconductor layer has a second aluminum concentration, and the second aluminum concentrations are substantially the same and are lower than the lowest first aluminum concentration among the first aluminum concentrations.
8. The light-emitting device according to claim 2 , wherein each high-refractive-index part has a first refractive index and the first refractive indices are gradually decreased in a direction from the substrate toward the light-emitting semiconductor stack, and each low-refractive-index part has a second refractive index and the second refractive indices are substantially the same and are lower than the lowest first refractive index among the high-refractive-index parts.
9. The light-emitting device according to claim 2 , wherein each high-refractive-index part has an aluminum gradient in a direction from the substrate toward the light-emitting semiconductor stack respectively.
10. The light-emitting device according to claim 2 , wherein each interface of the low-refractive-index part and the high-refractive-index part in the first semiconductor layers is inclined relative to a plane substantially parallel to each second semiconductor layer to define an angle ranging from 10 degrees to 80 degrees.
11. The light-emitting device according to claim 2 , wherein each interface of the low-refractive-index part and the high-refractive-index part in the first semiconductor layers is a curved surface.
12. The light-emitting device according to claim 1 , wherein the material of each second semiconductor layer comprises a second Group III-V semiconductor material comprising Al.
13. The light-emitting device according to claim 12 , wherein the second Group III-V semiconductor material is selected from the group consisting of Al y Ga (1-y) As, Al y Ga (1-y) P, Al y Ga (1-y) AsP, Al y As (1-y) Sb, Al y In (1-y) GaP, and Al y Ga (1-y) N, wherein y is less than 0.8.
14. The light-emitting device according to claim 1 , wherein each low-refractive-index part has a second refractive index and each second refractive index is lower than each refractive index of the second semiconductor layers.
15. The light-emitting device according to claim 14 , wherein a difference between the second refractive index and the refractive index of the second semiconductor layers is not less than 1.
16. The light-emitting device according to claim 1 , wherein a refractive index of each low-refractive-index part is less than 2.
17. The light-emitting device according to claim 1 , wherein each low-refractive-index part is in a trench.
18. The light-emitting device according to claim 1 , wherein each depth of each low-refractive-index part gradually decreases in a direction from the substrate toward the light-emitting semiconductor stack respectively.
19. The light-emitting device according to claim 1 , wherein each thickness of the first semiconductor layers is larger than each thickness of the second semiconductor layers.