Method for processing at least one crystalline silicon-wafer with a thermal budget or a solar-cell wafer with a thermal budget by a laser beam

1. A method for processing at least one crystalline silicon-wafer or a solar-cell wafer, wherein the method comprises:

moving the wafer with respect to a laser producing a laser beam; and therefore forming a laser channel in the wafer by means of the laser beam, wherein a thermal budget applied on the wafer by means of the laser beam is reduced in the peripheral region of the wafer, wherein the peripheral region includes a wafer edge, through which the laser beam exits the wafer after formation of the laser channel;

wherein the wafer is moved with respect to the laser outside of the peripheral region with a first speed; and

wherein the wafer is moved with respect to the laser in the peripheral region with at least a second speed which is higher than the first speed.

2. The method according to claim 1 , further comprising: dividing the wafer along the laser channel formed.

3. The method according to claim 2 , wherein the wafer is broken along the laser channel formed.

4. The method according to claim 1 , wherein the peripheral region is formed by a surface area of the wafer, which extends from the wafer edge maximum up to 5 cm into the wafer.

5. The method according to claim 1 ,

wherein the wafer is applied, outside of the peripheral region, with a first laser beam of a first laser-power; and

wherein the wafer is applied, in the peripheral region, with a laser beam of a second laser-power which is lower than the first laser-power.

6. The method according to claim 1 ,

wherein the wafer is applied, outside of the peripheral region, with a laser beam;

the focusing of which is in the plane of the wafer, and

wherein the wafer is applied, within the peripheral region, with a laser beam;

the focusing of the laser beam is outside of the wafer plane.

7. A method for processing at least one crystalline silicon-wafer or a solar-cell wafer, wherein the method comprises:

moving the wafer with respect to a laser producing a laser beam; and therefore forming a laser channel in the wafer by means of the laser beam, wherein a thermal budget applied on the wafer by means of the laser beam is reduced in the peripheral region of the wafer, wherein the peripheral region includes a wafer edge, through which the laser beam exits the wafer after formation of the laser channel;

wherein the wafer is applied, outside of the peripheral region, with a first laser beam of a first laser-power; and

wherein the wafer is applied, in the peripheral region, with a laser beam of a second laser-power which is lower than the first laser-power.

8. The method according to claim 7 , further comprising: dividing the wafer along the laser channel formed.

9. The method according to claim 8 , wherein the wafer is broken along the laser channel formed.

10. The method according to claim 7 , wherein the peripheral region is formed by a surface area of the wafer, which extends from the wafer edge maximum up to 5 cm into the wafer.

11. The method according to claim 7 , wherein the wafer is moved with respect to the laser outside of the peripheral region with a first speed; and

wherein the wafer is moved with respect to the laser in the peripheral region with at least a second speed which is higher than the first speed.

12. The method according to claim 7 , wherein the wafer is applied, outside of the peripheral region, with a laser beam; the focusing of which is in the plane of the wafer, and

wherein the wafer is applied, within the peripheral region, with a laser beam;

the focusing of the laser beam is outside of the wafer plane.

13. The method according to claim 7 , wherein the second laser-power is in the range of approximately 10 percent to 80 percent below the first laser-power.

14. The method according to claim 7 , further comprising:

decreasing stepwise the second laser-power to a range of approximately 10 percent to 80 percent below the first laser-power at the wafer edge.

15. A method for processing at least one crystalline silicon-wafer or a solar-cell wafer, wherein the method comprises:

moving the wafer with respect to a laser producing a laser beam; and therefore forming a laser channel in the wafer by means of the laser beam, wherein a thermal budget applied on the wafer by means of the laser beam is reduced in the peripheral region of the wafer, wherein the peripheral region includes a wafer edge, through which the laser beam exits the wafer after formation of the laser channel;

wherein the wafer is applied, outside of the peripheral region, with a laser beam;

the focusing of which is in the plane of the wafer, and

wherein the wafer is applied, within the peripheral region, with a laser beam;

the focusing of the laser beam is outside of the wafer plane.

16. The method according to claim 15 , further comprising: dividing the wafer along the laser channel formed.

17. The method according to claim 16 , wherein the wafer is broken along the laser channel formed.

18. The method according to claim 15 , wherein the peripheral region is formed by a surface area of the wafer, which extends from the wafer edge maximum up to 5 cm into the wafer.

19. The method according to claim 15 , wherein the wafer is moved with respect to the laser outside of the peripheral region with a first speed; and

wherein the wafer is moved with respect to the laser in the peripheral region with at least a second speed which is higher than the first speed.

20. The method according to claim 15 , wherein the wafer is applied, outside of the peripheral region, with a first laser beam of a first laser-power; and

wherein the wafer is applied, in the peripheral region, with a laser beam of a second laser-power which is lower than the first laser-power.